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A6FR100M

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
厂商名称
Vishay(威世)
零件包装代码
DO-4
包装说明
DO-4, 1 PIN
针数
1
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
FAST RECOVERY
外壳连接
ANODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-203AA
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
135 A
元件数量
1
相数
1
端子数量
1
最大输出电流
6 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
表面贴装
NO
技术
AVALANCHE
端子形式
SOLDER LUG
端子位置
UPPER
Base Number Matches
1
文档预览
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
DO-203AA (DO-4)
RoHS
COMPLIANT
• RoHS compliant
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
PRODUCT SUMMARY
I
F(AV)
6/12/16 A
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
I
2
√t
V
RRM
t
rr
T
J
Range
Range
CHARACTERISTICS
T
C
= 100 °C
1N3879. TO
1N3883.
6
(1)
9.5
72
75
(1)
26
23
363
50 to 400
(1)
1N3889. TO
1N3893.
12
(1)
19
145
150
(1)
103
94
856
6FL..
6
9.5
110
115
60
55
1452
12FL..
12
19
145
150
103
94
1452
50 to 1000
See Recovery Characteristics table
- 65 to 150
16FL..
16
25
180
A
190
160
150
2290
I
2
√s
V
ns
°C
A
2
s
UNITS
A
A
I
2
t
Note
(1)
JEDEC registered values
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
50
100
-
200
300
400
50
100
-
200
300
400
5
10
6FL..
12FL..
16FL..
20
40
60
80
100
Note
(1)
JEDEC registered values
50
100
200
400
600
800
1000
V
RSM
, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
75
150
250
350
450
75
150
250
350
450
75
150
275
500
725
950
1250
50
-
6.0
25
(1)
3.0
(1)
5.0
(1)
15
(1)
1.0
(1)
3.0
(1)
I
RRM
MAXIMUM
AT T
J
= 25 °C
µA
I
RRM
MAXIMUM
AT T
J
= 100 °C
mA
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
Fast Recovery Diodes
(Stud Version), 6/12/16 A
1N3879.
1N3880.
1N3881.
1N3882.
1N3883.
1N3889.
1N3890.
1N3891.
1N3892.
1N3893.
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS current
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
DC
1N3879.
1N3883.
6
(1)
100
9.5
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Maximum forward voltage drop
Note
(1)
JEDEC registered values
I
2
√t
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial
T
J
= 150 °C
85
90
72
75
(1)
36
33
26
23
363
1.4
(1)
1.5
(1)
6FL..
6
100
9.5
130
135
110
115
86
78
60
55
856
1.4
1.5
1N3889.
1N3893. 16FL..
12FL..
12
(1)
100
19
170
180
145
150
(1)
145
130
103
94
1452
1.4
(1)
1.5
(1)
16
100
25
215
225
180
190
230
210
160
150
2290
1.4
1.5
A
2
√s
V
V
A
2
s
A
UNITS
A
°C
I
F(AV)
I
F(RMS)
t = 0.1 to 10 ms, no voltage reapplied
T
J
= 25 °C; I
F
= Rated I
F(AV)
(DC)
T
C
= 100 °C; I
FM
=
π
x rated I
F(AV)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879. 1N3889.
1N3883. 1N3893.
6FL..
12FL..
16FL..
S02
Maximum reverse
recovery time
Maximum peak
recovery current
Maximum reverse
recovery charge
T
J
= 25 °C, I
F
= 1 A to V
R
= 30 V,
dI
F
/dt = 100 A/µs
T
J
= 25 °C, dI
F
/dt = 25 A/µs,
I
FM
=
π
x rated I
F(AV)
I
FM
=
π
x rated I
F(AV)
T
J
= 25 °C, I
F
= 1 A to V
R
= 30 V,
dI
F
/dt = 100 A/µs
T
J
= 25 °C, dI
F
/dt = 25 A/µs,
I
FM
=
π
x rated I
F(AV)
150
300
(1)
Vishay High Power Products
UNITS
S05
-
ns
500
-
-
-
nC
-
dir
dt
Q
rr
I
RM(REC)
I
FM
150
300
(1)
-
200
t
rr
t
rr
t
I
RM(REC)
4
(1)
400
400
5
(1)
350
400
-
-
Q
rr
Note
(1)
JEDEC registered values
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
- 65 to 150
°C
- 65 to 175
DC operation
Mounting surface, smooth,
flat and greased
Not lubricated threads
Allowable mounting torque
Lubricated threads
2.5
2.0
0.5
1.5
+ 0 - 10 %
(13)
1.2
+ 0 - 10 %
16FL..
UNITS
T
J
T
Stg
R
thJC
R
thCS
1.6
°C/W
N·m
(lbf · in)
(10)
7
g
oz.
Approximate weight
0.25
Case style
JEDEC
DO-203AA (DO-4)
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
TEST CONDITIONS
UNITS
SINUSOIDAL CONDUCTION
180°
120°
60°
30°
0.58
0.60
1.28
2.20
0.46
0.48
1.02
1.76
0.37
0.39
0.82
1.41
RECTANGULAR CONDUCTION
0.33
0.58
1.28
2.20
0.26
0.46
1.02
1.76
0.21
0.37
0.82
1.41
T
J
= 150 °C
K/W
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3879 and 6FL Series
Fig. 3 - Average Forward Current vs.
Maximum Allowable Case Temperature, 16FL Series
Fig. 2 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3889 and 12FL Series
Fig. 4 - Reverse Recovery Time Test Waveform
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3879 and 6FL Series
Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 1N3879 and 6FL Series
Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3889 and 12FL Series
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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参数对比
与A6FR100M相近的元器件有:A6FR40M、A6FR5、A6FR5M、A6FR60M、A12F40。描述及对比如下:
型号 A6FR100M A6FR40M A6FR5 A6FR5M A6FR60M A12F40
描述 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 DO-4 DO-4 DO-4 DO-4 DO-4 DO-4
包装说明 DO-4, 1 PIN DO-4, 1 PIN DO-4, 1 PIN DO-4, 1 PIN DO-4, 1 PIN ROHS COMPLIANT, DO-4, 1 PIN
针数 1 1 1 1 1 1
Reach Compliance Code unknown unknown unknown unknown unknown compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
应用 FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY GENERAL PURPOSE
外壳连接 ANODE ANODE ANODE ANODE ANODE CATHODE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-203AA DO-203AA DO-203AA DO-203AA DO-203AA DO-203AA
JESD-30 代码 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
最大非重复峰值正向电流 135 A 135 A 135 A 135 A 135 A 280 A
元件数量 1 1 1 1 1 1
相数 1 1 1 1 1 1
端子数量 1 1 1 1 1 1
最大输出电流 6 A 6 A 6 A 6 A 6 A 12 A
封装主体材料 METAL METAL METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1000 V 400 V 50 V 50 V 600 V 400 V
表面贴装 NO NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
端子位置 UPPER UPPER UPPER UPPER UPPER UPPER
Base Number Matches 1 1 1 1 1 1
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