ACE1500B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1500B is P-Channel enhancement mode power MOSFET which is produced with high cell
density and DMOS trench technology .This device particularly suits low voltage applications, especially
for battery powered circuits, the tiny and thin outline saves PCB consumption.
Features
V
DS
(V)=-20V
I
D
=-1.6A (V
GS
=-4.5V)
R
DS(ON)
＜155mΩ
(V
GS
=-4.5V)
R
DS(ON)
＜168mΩ
(V
GS
=-2.5V)
R
DS(ON)
＜220mΩ
(V
GS
=-1.8V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) T
A
=25
O
C
Drain Current (Pulse)
Power Dissipation T
A
=25
O
C
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
-20
±12
-1.6
-5
350
Unit
V
V
A
mW
O
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
C
Packaging Type
SOT-323
VER 1.2
1
ACE1500B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1500B XX + H
Halogen - free
Pb - free
CM : SOT-323
Electrical Characteristics
T
A
=25 C unless otherwise noted
O
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
V
(BR)DSS
I
DSS
I
GSS
R
DS(ON)
V
GS(th)
g
FS
V
SD
I
S
Conditions
Static
V
GS
=0V, I
D
=-250uA
V
DS
=-20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
V
GS
=-4.5V, I
D
=-1A
V
GS
=-2.5V, I
D
=-0.5A
V
GS
=-1.8V, I
D
=-0.3A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-2A
I
SD
=-1.6A, V
GS
=0V
Min.
-20
Typ.
Max.
Unit
V
-1
100
145
150
180
-0.4
-0.7
5
-0.93
-1.1
-1.6
155
168
220
-1
uA
nA
mΩ
V
S
V
A
Switching
Q
g
Q
gs
Q
gd
T
d(on)
t
f
t
d(off)
t
f
Dynamic
C
iss
C
oss
C
rss
V
DS
=-6V, V
GS
=0V
f=1MHz
472
71
51
pF
V
DS
=-6V,R
GEN
=6Ω,
V
GS
=-4.5V
R
L
=6Ω
V
DS
=-6V, I
D
=-2.8A
V
GS
=-4.5V
4.9
0.62
1.07
10.1
4.76
84.1
25.2
ns
nC
1. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
2. Guaranteed by design, not subject to production testing.
VER 1.2
2
ACE1500B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE1500B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE1500B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOT-323
Unit: mm
VER 1.2
5
嵌入式系统
