ACE7407A
P-Channel Enhancement Mode MOSFET
Description
The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline surface mount package.
Features
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-20V/-3.4A, R
DS (ON)
= 100mΩ@VGS=-4.5V
-20V/-2.4A, R
DS (ON)
= 125mΩ@VGS=-2.5V
-20V/-1.7A, R
DS (ON)
= 150mΩ@VGS=-1.8V
-20V/-1.0A, R
DS (ON)
= 220mΩ@VGS=-1.25V
Super high density cell design for extremely low R
DS (ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
VER 1.1
1
ACE7407A
P-Channel Enhancement Mode MOSFET
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150℃)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol Max
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
-20
±12
-2.3
-1.7
-6
-1.4
0.33
0.21
-55/150
-55/150
105
O
Unit
V
V
A
A
A
W
O
O
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
C
C
C/W
Packaging Type
SOT-323
3
SOT-323 Description
1
2
1
2
Gate
Source
Drain
3
Ordering information
ACE7407A CM + H
Halogen - free
Pb - free
CM : SOT-323
VER 1.1
2
ACE7407A
P-Channel Enhancement Mode MOSFET
Electrical Characteristics
T
A
=25℃, unless otherwise noted
Parameter
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
Symbol
Conditions
Static
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=0V,V
GS
=±12V
V
DS
=-20V, V
GS
=0V
V
DS
=-20V, V
GS
=0V T
J
=55℃
V
DS
≧-5V,
V
GS
=-4.5V
V
GS
=-4.5V, I
D
=-3.4A
V
GS
=-2.5V, I
D
=-2.4A
V
GS
=-1.8V, I
D
=-1.7A
V
GS
=-1.25V, I
D
=-1.0A
-20
-0.35
-0.8
±100
-1
-5
-6
0.080 0.100
0.105 0.125
0.130 0.150
0.180
6
-0.8
4.8
-1.2
8
0.22
V
nA
uA
A
Drain-Source
On-Resistance
Forward
Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
R
DS(ON)
Ω
Gfs
V
SD
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
V
DS
=-5V,I
D
=-2.8A
I
S
=-1.5A, V
GS
=0V
Dynamic
V
DS
=-6V, V
GS
=-4.5V, I
D
=-2.8A
S
V
1.0
1.0
485
85
40
10
16
23
25
20
nC
V
DS
=-6V, V
GS
=0V, f=1MHz
pF
V
DD
=-6V, R
L
=6Ω, V
GEN
=-4.5V,
I
D
=-1.0A ,R
G
=6Ω
13
18
15
nS
VER 1.1
3
ACE7407A
P-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Output Characteristics
Transfer Characteristics
V
DS
-Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V
GS
-Gate-to-Source Voltage (V)
Capacitance
I
D
-Drain Current (A)
Gate Charge
V
DS
-Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Q
g
-Total Gate Charge (nC)
T
J
-Junction Temperature (℃)
VER 1.1
4
ACE7407A
P-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
V
SD
-Source-to-Drain Voltage (V)
Threshold Voltage
V
GS
-Gate-to-Source Voltage (V)
Single Pulse Power
T
J
-Temperature(℃)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.1
5
