ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE9926B uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge.
They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used
individually, in parallel or to form a bidirectional blocking switch.
Features
V
DS
(V)=20V
I
D
=6A (V
GS
=4.5V)
R
DS(ON)
<30mΩ (V
GS
=4.5V)
R
DS(ON)
<40mΩ (V
GS
=2.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
T
A
=25
O
C
T
A
=70
O
C
T
A
=25
O
C
T
A
=70
O
C
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
20
±12
6
5
24
2
1.3
Unit
V
V
A
A
W
O
Drain Current (Pulse) * B
Power Dissipation
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150
C
Packaging Type
SOP-8
VER 1.2
1
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE9926B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
T
A
=25 C unless otherwise noted
O
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn- Off Rise Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V
(BR)DSS
I
DSS
I
GSS
R
DS(ON)
V
GS(th)
g
FS
V
SD
I
S
Conditions
Static
V
GS
=0V, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=6A
V
GS
=0V, I
SD
=1.7A
Min.
20
Typ.
Max.
Unit
V
1
100
21
30
0.65
0.78
12
0.8
1.0
1.7
30
40
1
uA
nA
mΩ
V
S
V
A
Switching
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Dynamic
C
iss
C
oss
C
rss
V
DS
=8V, V
GS
=0V
f=1MHz
522.3
98.48
74.69
pF
V
GS
=4.5V, V
DS
=10V,
R
L
=10Ω, R
GEN
=6Ω
V
DS
=10V, V
GS
=4.5V,
I
D
=6A
6.24
1.64
1.34
10.4
4.4
27.36
4.16
8.11
2.13
1.74
20.8
8.8
54.72
8.32
ns
nC
Note: A. The value of R
θJA
is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment
with T
A
=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
5
