Cache SRAM Module, 512KX8, 35ns, CMOS, CPGA66, 1.385 X 1.385 INCH, 0.245 INCH HEIGHT, HERMETIC SEALED, PGA-66
厂商名称:Cobham Semiconductor Solutions
下载文档型号 | ACT-RS128K32N-035P1Q | ACT-RS128K32N-045P1Q | ACT-RS128K32N-035F1Q | ACT-RS128K32N-045F1Q | ACT-RS128K32N-035F2Q | ACT-RS128K32N-045F2Q |
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描述 | Cache SRAM Module, 512KX8, 35ns, CMOS, CPGA66, 1.385 X 1.385 INCH, 0.245 INCH HEIGHT, HERMETIC SEALED, PGA-66 | Cache SRAM Module, 512KX8, 45ns, CMOS, CPGA66, 1.385 X 1.385 INCH, 0.245 INCH HEIGHT, HERMETIC SEALED, PGA-66 | Cache SRAM Module, 512KX8, 35ns, CMOS, CQMA68 | Cache SRAM Module, 512KX8, 45ns, CMOS, CQMA68 | Cache SRAM Module, 512KX8, 35ns, CMOS, CQMA68 | Cache SRAM Module, 512KX8, 45ns, CMOS, CQMA68 |
厂商名称 | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
最长访问时间 | 35 ns | 45 ns | 35 ns | 45 ns | 35 ns | 45 ns |
其他特性 | USER CONFIGURABLE AS 128K X 32 OR 256K X 16 | USER CONFIGURABLE AS 128K X 32 OR 256K X 16 | USER CONFIGURABLE AS 128K X 32 OR 256K X 16 | USER CONFIGURABLE AS 128K X 32 OR 256K X 16 | USER CONFIGURABLE AS 128K X 32 OR 256K X 16 | USER CONFIGURABLE AS 128K X 32 OR 256K X 16 |
JESD-30 代码 | S-CPGA-P66 | S-CPGA-P66 | S-CQMA-F68 | S-CQMA-F68 | S-CQMA-G68 | S-CQMA-G68 |
内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
内存集成电路类型 | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE | CACHE SRAM MODULE |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 66 | 66 | 68 | 68 | 68 | 68 |
字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | GRID ARRAY | GRID ARRAY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | PIN/PEG | PIN/PEG | FLAT | FLAT | GULL WING | GULL WING |
端子位置 | PERPENDICULAR | PERPENDICULAR | QUAD | QUAD | QUAD | QUAD |