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ACTS245T
Functional Diagram
NOTE: (1 of 8)
P
A
N
B
P
N
OE
DIR
TRUTH TABLE
INPUTS
OE
L
L
H
NOTE:
H = High Voltage Level, L = Low Voltage Level, X = Immaterial.
DIR
L
H
X
OPERATION
B Data to A Bus
A Data to B Bus
Isolation
2
ACTS245T
Die Characteristics
DIE DIMENSIONS:
(2440µm x 2970µm x 533µm
±51µm)
96 x 117 x 21mils
±2mil
METALLIZATION:
Type: Al Si Cu
Thickness: 10.0k
Å
±2k
Å
SUBSTRATE POTENTIAL:
Unbiased (Silicon on Sapphire)
Bond Pad #20 (V
CC
) First
Bond Pad #20 (V
CC
) Uses Two Bond Wires
Bond Pad #10 (GND) Uses Two Bond Wires
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 8.0k
Å
±1.0k
Å
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
420
PROCESS:
CMOS SOS
Metallization Mask Layout
ACTS245T
A0
(2)
DIR
(1)
VCC
(20)
VCC
(20)
OE
(19)
A1 (3)
(18) B0
A2 (4)
(17) B1
A3 (5)
(16) B2
A4 (6)
(15) B3
A5 (7)
(14) B4
A6 (8)
(13) B5
(9)
A7
(10)
GND
(10)
GND
(11)
B7
(12)
B6
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