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AD8002ARZ-RL

2 CHANNEL, VIDEO AMPLIFIER, PDSO8, SOIC-8

器件类别:模拟混合信号IC    消费电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rochester Electronics
零件包装代码
SOIC
包装说明
SOIC-8
针数
8
Reach Compliance Code
unknown
标称带宽
600000 kHz
商用集成电路类型
VIDEO AMPLIFIER
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.9 mm
湿度敏感等级
1
信道数量
2
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
认证状态
COMMERCIAL
座面最大高度
1.75 mm
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
3 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3.9 mm
文档预览
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FEATURES
Excellent Video Specifications (R
L
= 150 , G = +2)
Gain Flatness 0.1 dB to 60 MHz
0.01% Differential Gain Error
0.02 Differential Phase Error
Low Power
5.5 mA/Amp Max Power Supply Current (55 mW)
High Speed and Fast Settling
600 MHz, –3 dB Bandwidth (G = +1)
500 MHz, –3 dB Bandwidth (G = +2)
1200 V/ s Slew Rate
16 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, f
C
= 5 MHz
33 dBm Third Order Intercept, F
1
= 10 MHz
–66 dB SFDR, f = 5 MHz
–60 dB Crosstalk, f = 5 MHz
High Output Drive
Over 70 mA Output Current
Drives Up to Eight Back-Terminated 75 Loads
(Four Loads/Side) While Maintaining Good
Differential Gain/Phase Performance (0.01%/0.17 )
Available in 8-Lead Plastic DIP, SOIC and SOIC Packages
APPLICATIONS
A-to-D Driver
Video Line Driver
Differential Line Driver
Professional Cameras
Video Switchers
Special Effects
RF Receivers
PRODUCT DESCRIPTION
Dual 600 MHz, 50 mW
Current Feedback Amplifier
AD8002
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP, SOIC, and SOIC
OUT1 1
–IN1 2
+IN1 3
V– 4
8 V+
7 OUT2
6 –IN2
5 +IN2
AD8002
The outstanding bandwidth of 600 MHz along with 1200 V/µs
of slew rate make the AD8002 useful in many general purpose
high speed applications where dual power supplies of up to
±
6 V
and single supplies from 6 V to 12 V are needed. The AD8002 is
available in the industrial temperature range of –40°C to +85°C.
1
SIDE 1
0
–1
–2
–3
SIDE 1
–4
–5
SIDE 2
–0.2
–0.3
–0.4
–0.5
1M
–6
–7
–8
–9
1G
NORMALIZED FLATNESS – dB
G = +2
R
L
= 100
V
IN
= 50mV
0.1
0
–0.1
SIDE 2
10M
100M
FREQUENCY – Hz
The AD8002 is a dual, low-power, high-speed amplifier designed
to operate on
±5
V supplies. The AD8002 features unique trans-
impedance linearization circuitry. This allows it to drive video
loads with excellent differential gain and phase performance on
only 50 mW of power per amplifier. The AD8002 is a current
feedback amplifier and features gain flatness of 0.1 dB to 60 MHz
while offering differential gain and phase error of 0.01% and
0.02°. This makes the AD8002 ideal for professional video
electronics such as cameras and video switchers. Additionally,
the AD8002’s low distortion and fast settling make it ideal for
buffer high-speed A-to-D converters.
The AD8002 offers low power of 5.5 mA/amplifier max (V
S
=
±
5 V) and can run on a single 12 V power supply, while capable
of delivering over 70 mA of load current. It is offered in an
8-lead plastic DIP, SOIC, and
µSOIC
package. These features
make this amplifier ideal for portable and battery-powered
applications where size and power are critical.
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Figure 1. Frequency Response and Flatness, G = +2
SIDE 1
G = +2
1V STEP
SIDE 2
200mV
5ns
Figure 2. 1 V Step Response, G = +1
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2001
NORMALIZED FREQUENCY RESPONSE – dB
AD8002–SPECIFICATIONS
(@ T = 25 C, V =
A
S
5 V, R
L
= 100
, R
C1
= 75
, unless otherwise noted.)
Unit
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
ns
ns
dBc
dB
nV/√Hz
pA/√Hz
pA/√Hz
%
Degree
dBm
dBm
dB
6
9
25
35
6.0
10
mV
mV
µV/°C
±µA
±µA
±µA
±µA
kΩ
kΩ
MΩ
pF
±
V
1.0
0.9
dB
µA/V
µA/V
±
V
mA
mA
±
6.0
11.5
V
mA
dB
dB
µA/V
µA/V
Model
Conditions
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth,
N Package
R Package
RM Package
Bandwidth for 0.1 dB Flatness
N Package
R Package
RM Package
Slew Rate
Settling Time to 0.1%
Rise and Fall Time
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion
Crosstalk, Output to Output
Input Voltage Noise
Input Current Noise
Differential Gain Error
Differential Phase Error
Third Order Intercept
1 dB Gain Compression
SFDR
DC PERFORMANCE
Input Offset Voltage
T
MIN
–T
MAX
Offset Drift
–Input Bias Current
T
MIN
–T
MAX
+Input Bias Current
Open Loop Transresistance
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
Offset Voltage
–Input Current
+Input Current
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
2
Short Circuit Current
2
POWER SUPPLY
Operating Range
Quiescent Current/Both Amplifiers
Power Supply Rejection Ratio
–Input Current
+Input Current
T
MIN
–T
MAX
V
O
=
±
2.5 V
T
MIN
–T
MAX
+Input
–Input
+Input
V
CM
=
±
2.5 V
V
CM
=
±
2.5 V, T
MIN
–T
MAX
V
CM
=
±
2.5 V, T
MIN
–T
MAX
R
L
= 150
G = +2, R
F
= 750
G = +2, R
F
= 681
G = +2, R
F
= 681
G = +2, V
O
= 2 V Step
G = –1, V
O
= 2 V Step
G = +2, V
O
= 2 V Step
G = +2, V
O
= 2 V Step, R
F
= 750
f
C
= 5 MHz, V
O
= 2 V p-p
G = +2, R
L
= 100
f = 5 MHz, G = +2
f = 10 kHz, R
C
= 0
f = 10 kHz, +In
–In
NTSC, G = +2, R
L
= 150
NTSC, G = +2, R
L
= 150
f = 10 MHz
f = 10 MHz
f = 5 MHz
G = +2, R
F
= 750
G = +1, R
F
= 1.21 kΩ
G = +2, R
F
= 681
G = +1, R
F
= 953
G = +2, R
F
= 681
G = +1, R
F
= 1 kΩ
AD8002A
Min
Typ
Max
500
600
500
600
500
600
60
90
60
700
1200
16
2.4
–65
–60
2.0
2.0
18
0.01
0.02
33
14
–66
2.0
2.0
10
5.0
3.0
250
175
900
10
50
1.5
3.2
49
54
0.3
0.2
3.1
70
110
2.7
85
±
3.0
T
MIN
–T
MAX
+V
S
= +4 V to +6 V, –V
S
= –5 V
–V
S
= – 4 V to – 6 V, +V
S
= +5 V
T
MIN
–T
MAX
T
MIN
–T
MAX
60
49
10.0
75
56
0.5
0.1
2.5
0.5
NOTES
1
R
C
is recommended to reduce peaking and minimize input reflections at frequencies above 300 MHz. However, R
C
is not required.
2
Output current is limited by the maximum power dissipation in the package. See the power derating curves.
Specifications subject to change without notice.
–2–
REV. D
AD8002
ABSOLUTE MAXIMUM RATINGS
1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W
µSOIC
Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R, RM . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . – 40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic DIP Package:
θ
JA
= 90°C/W
8-Lead SOIC Package:
θ
JA
= 155°C/W
8-Lead
µSOIC
Package:
θ
JA
= 200°C/W
The maximum power that can be safely dissipated by the
AD8002 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8002 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
2.0
8-LEAD PLASTIC-DIP PACKAGE
MAXIMUM POWER DISSIPATION – W
8-LEAD SOIC PACKAGE
1.5
T
J
= 150 C
1.0
0.5
8-LEAD SOIC
PACKAGE
0
–50 –40 –30 –20 –10
0
10
20
30 40
50
60
70
80 90
AMBIENT TEMPERATURE – C
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Model
AD8002AN
AD8002AR
AD8002AR-REEL
AD8002AR-REEL7
AD8002ARM
AD8002ARM-REEL
AD8002ARM-REEL7
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Description
8-Lead PDIP
8-Lead SOIC
8-Lead SOIC 13" REEL
8-Lead SOIC 7" REEL
8-Lead
µSOIC
8-Lead
µSOIC
13" REEL
8-Lead
µSOIC
7" REEL
Package Option
N-8
SO-8
SO-8
SO-8
RM-8
RM-8
RM-8
Brand Code
Standard
Standard
Standard
Standard
HFA
HFA
HFA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8002 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. D
–3–
AD8002–Typical Performance Characteristics
953
+5V
10 F
0.1 F
750
+5V
750
10 F
0.1 F
AD8002
75
V
IN
PULSE
GENERATOR
T
R
/T
F
= 250ps
50
0.1 F
10 F
–5V
R
L
= 100
V
IN
PULSE
GENERATOR
T
R
/T
F
= 250ps
AD8002
75
50
0.1 F
10 F
–5V
R
L
= 100
TPC 1. Test Circuit , Gain = +1
TPC 4. Test Circuit, Gain = +2
SIDE 1
SIDE 1
G = +1
100mV STEP
G = +2
100mV STEP
SIDE 2
SIDE 2
20mV
5ns
20mV
5ns
TPC 2. 100 mV Step Response, G = +1
TPC 5. 100 mV Step Response, G = +2
SIDE 1
G = +1
1V STEP
SIDE 1
G = +2
1V STEP
SIDE 2
SIDE 2
200mV
5ns
20mV
5ns
TPC 3. 1 V Step Response, G = +1
TPC 6. 1 V Step Response, G = +2
–4–
REV. D
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