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AD8216

high bandwidth, bidirectional 65 V difference amplifier

器件类别:半导体    分立半导体   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

器件标准:  

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High Bandwidth, Bidirectional
65 V Difference Amplifier
AD8216
FEATURES
±4000 V HBM ESD
Ideal for current shunt applications
High common-mode voltage range
−4 V to +65 V operating
−40 V to +80 V survival
3 MHz bandwidth
<100 ns output propagation delay
Gain: 3 V/V
Wide operating temperature range
Die: −40°C to +150°C
8-lead SOIC: −40°C to +125°C
Adjustable output offset
Available in 8-lead SOIC
Excellent ac and dc performance
10 μV/°C offset drift
10 ppm/°C gain drift
FUNCTIONAL BLOCK DIAGRAM
V+
6
+IN
8
5
OUT
–IN
1
AD8216
7
V
REF
1
3
NC
4
2
V
REF
2
NC = NO CONNECT
GND
Figure 1.
APPLICATIONS
High-side current sensing in
DC-to-dc converters
Motor controls
Transmission controls
Diesel-injection controls
Engine management
Suspension controls
Vehicle dynamic controls
GENERAL DESCRIPTION
The AD8216 is a single-supply, difference amplifier ideal for
amplifying small differential voltages in the presence of large
common-mode voltages. The operating input common-mode
voltage range extends from −4 V to +65 V. The typical supply
voltage is 5 V. The AD8216 features a 3 MHz bandwidth,
allowing for the input-to-output propagation delay that is
always less than 150 ns. This feature is ideal for applications
monitoring rapidly increasing and decreasing load currents.
The AD8216 is offered in a SOIC package. The operating
temperature range is −40°C to +125°C.
Excellent ac and dc performance over temperature keep errors
in the measurement loop to a minimum. Offset and gain drift
are guaranteed to a maximum of 20 μV/°C and 15 ppm/°C,
respectively.
The output offset can be adjusted from 0.06 V to 4.9 V with a
5 V supply by using the V
REF
1 pin and the V
REF
2 pin. With the
V
REF
1 pin attached to the V+ pin and the V
REF
2 pin attached to
the GND pin, the output is set at half scale. Attaching both V
REF
1
and V
REF
2 to GND causes the output to be unipolar, starting
near ground. Attaching both V
REF
1 and V
REF
2 to V+ causes the
output to be unipolar, starting near V+. Other offsets can be
obtained by applying an external voltage to V
REF
1 and V
REF
2.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2007 Analog Devices, Inc. All rights reserved.
07062-001
AD8216
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Typical Performance Characteristics ............................................. 6
Theory of Operation ...................................................................... 10
Output Offset Adjustment............................................................. 11
Unidirectional Operation.......................................................... 11
Ground Referenced Output ...................................................... 11
V+ Referenced Output .............................................................. 11
Bidirectional Operation............................................................. 11
External ReferenceD Output .................................................... 12
Splitting the Supply .................................................................... 12
Splitting an External Reference ................................................ 12
Applications Information .............................................................. 13
High-Side Current Sense with a Low-Side Switch................. 13
High-Side Current Sense with a High-Side Switch ............... 13
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14
REVISION HISTORY
11/07—Revision 0: Initial Version
Rev. 0 | Page 2 of 16
AD8216
SPECIFICATIONS
T
A
= operating temperature range, V
S
= 5 V, unless otherwise noted.
Table 1.
Parameter
GAIN
Initial
Accuracy
Accuracy Over Temperature
Gain vs. Temperature
VOLTAGE OFFSET
Offset Voltage, RTI
Over Temperature, RTI
Offset Drift
INPUT
Input Impedance
Differential
Common Mode
Input Voltage Range
Conditions
Min
Typ
3
V
OUT
≥ 0.1 V dc, 25°C
Specified temperature range
10
25°C
Specified temperature range
±0.5
±10
±3
±20
±0.25
±0.4
15
Max
Unit
V/V
%
%
ppm/°C
mV
mV
μV/°C
400
200
Common mode, continuous
Differential, V
REF
1 and V
REF
2 tied to GND
Differential, V
REF
1 @ GND and V
REF
2 @ 5 V
25°C, f = dc to 20 kHz
1
Operating temperature range, f = dc to 20 kHz
1
R
L
= 25 kΩ
−4
1.6
−800
80
80
0.06
200
3
15
100
20
0.5
Divider to supplies
Voltage applied to V
REF
1 and V
REF
2 in parallel
V
S
= 5 V
0.499
0.06
0.0
24
4.5
V
OUT
= 0.1 V dc
70
Operating temperature range
−40
+125
1
0.501
±0.5
4.9
V
S
40
5.5
2
+800
90
90
4.9
+65
Common-Mode Rejection
OUTPUT
Output Voltage Range
Output Resistance
DYNAMIC RESPONSE
Small Signal −3 dB Bandwidth
Slew Rate
Propagation Delay
NOISE
0.1 Hz to 10 Hz, RTI
Spectral Density, 1 kHz, RTI
OFFSET ADJUSTMENT
Ratiometric Accuracy
2
Accuracy, RTO
Output Offset Adjustment Range
VREF Input Voltage Range
VREF Divider Resistor Values
POWER SUPPLY
Operating Range
Quiescent Current Over Temperature
Power Supply Rejection Ratio
TEMPERATURE RANGE
For Specified Performance
1
2
V
V
mV
dB
dB
V
Ω
MHz
V/μs
ns
μV p-p
μV/√Hz
V/V
mV/V
V
V
V
mA
dB
°C
Input-to-output response
150
32
Source imbalance < 2 Ω.
The offset adjustment is ratiometric to the power supply when V
REF
1 and V
REF
2 are used as a divider between the supplies.
Rev. 0 | Page 3 of 16
AD8216
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage
Continuous Input Common-Mode Voltage
Continuous Input Differential Voltage
Reverse Supply Voltage
ESD Rating
HBM (Human Body Model)
CDM (Charged Device Model)
Operating Temperature Range
Storage Temperature Range
Output Short-Circuit Duration
Rating
12.5 V
−40 V to +80 V
6V
0.3 V
±4000 V
±1000 V
−40°C to +125°C
−65°C to +150°C
Indefinite
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 4 of 16
AD8216
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
8
–IN
1
GND
2
V
REF
2
3
8
+IN
V
REF
1
V+
07062-003
AD8216
TOP VIEW
(Not to Scale)
7
6
5
7
2
6
3
5
07062-002
NC
4
OUT
NC = NO CONNECT
Figure 3. Pin Configuration
Figure 2. Metallization Diagram
Table 3. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
7
8
Mnemonic
−IN
GND
V
REF
2
NC
OUT
V+
V
REF
1
+IN
X
−320
−357
−349
NC
+348
+349
+349
+318
Y
+390
+14
−201
NC
−325
−194
−26
+390
Die size is 1100 μm by 1035 μm.
Die thickness is 13 mil.
Minimum passivation opening (minimum bond pad size)
is 92 μm × 92 μm.
Passivation type is 8 kA USG (Oxide) + 10 kA Oxynitride.
Bond pad metal composition is 98.5% Al, 1% Si, and 0.5% Cu.
Backside potential is V+.
Rev. 0 | Page 5 of 16
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