ADA10000
Linear Amplifier MMIC
FEATURES
·
·
·
·
High Linearity : +15 dBm IIP3
Low Noise Figure: 2.0 dB
Single Supply: +8 VDC
Wide Bandwidth: 50 MHz to 1 GHz
Data Sheet - Rev 2.2
S3 Package
Modified 16 Pin SOIC
PRODUCT DESCRIPTION
The ADA10000 is a monolithic IC intended for use in
applications requiring high linearity, such as Cellular
Telephone Base Station Driver Amplifiers, CATV Fiber
Receiver and Distribution Amplifiers and CATV Drop
Amplifiers. Offered in a modified 16 lead surface
mount SOIC package, it is well suited for use in
amplifiers where small size, reduced component
count, and high reliability are important.
RF Input
15 dB
RF Output
/ Bias
Figure 1: Block Diagram
08/2001
ADA10000
1
2
3
4
5
6
7
8
GND
GND
GND
GND
GND
RF
IN
GND
GND
Figure 2: Pin Out
GND
GND
RF
OUT
GND
GND
GND
GND
GND
16
15
14
13
12
11
10
9
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
N AME
GND
GND
GND
GND
GND
RF
IN
GND
GND
D ESC R IPTION
Ground
Ground
Ground
Ground
Ground
RF Input
Ground
Ground
PIN
9
10
11
12
13
14
15
16
N AME
GND
GND
GND
GND
GND
RF
OUT
GND
GND
D ESC R IPTION
Ground
Ground
Ground
Ground
Ground
RF Output / Supply
Ground
Ground
2
Data Sheet - Rev 2.2
08/2001
ADA10000
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum and Minimum Ratings
PAR AMETER
Supply (pi n 14)
RF Power at Input (pi n 6)
Storage Temperature
Solderi ng Temperature
Solderi ng Ti me
MIN
0
-
-65
-
-
MAX
+12
+10
+150
260
5
U N IT
VD C
dB m
o
C
C
o
se c
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Note:
1. Pin 6 should be AC-coupled. No external DC bias should be applied.
Table 3: Operating Ranges
PAR AMETER
RF Input / Output Frequency
Supply Voltage: V
DD
(pi n 14)
C ase Temperature
MIN
50
+4
-40
TYP
-
+8
-
MAX
1000
+9
+85
(1)
U N IT
MHz
VD C
o
C
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
Note:
(1) Median time to failure will degrade above this temperature.
Data Sheet - Rev 2.2
08/2001
3
ADA10000
Table 4: Electrical Specifications
(T
A
= +25 °C, V
DD
= + 8 VDC, Test System = 75W )
PAR AMETER
C SO
(1)
/ C SO
(2)
C TB
Gai n
Noi se Fi gure
2nd Order Input Intercept Poi nt
(IIP2)
(3)
3rd Order Input Intercept Poi nt
(IIP3)
(3)
Thermal Resi stance
C urrent C onsumpti on
(4)
(1)
MIN
60 / 62
65 / 74
14
-
+29
+13
-
50
TYP
-
-
15
2.0
+34
+15
-
-
MAX
-
-
-
3.5
-
-
35
150
U N IT
dB c
dB c
dB
dB
dB m
dB m
o
/C TB
(2)
C /W
mA
Notes:
(1) 160 channels, +17 dBmV per channel (measured at output), 6 MHz channel spacing
(2) 80 channels, +19 dBmV per channel (measured at output), 6 MHz channel spacing.
(3) Two tones, -10 dBm per tone at input
(4) The device can be operated at V
DD
= +6 VDC for lower power dissipation. Refer to
the figures on page 5 for performance variation with supply voltage.
1000 pF
RF
OUT
ADA10000
3.9
µH
1000 pF
5.6 nH
0.1
µ
f
RF
IN
Figure 3: Test Circuit
4
Data Sheet - Rev 2.2
08/2001
ADA10000
PERFORMANCE DATA
18
17
Gain (dB)
16
15
14
13
12
50
250
450
650
Frequency (MHz)
850
Figure 4: Gain Noise Figure vs. Frequency
T
A
= 25
o
C, V
DD
= +8V
4
3.5
3
2.5
2
1.5
1
Noise Figure (dB)
GAIN
NF
Figure 5: Gain and Noise Figure vs. V
DD
T
A
= 25
o
C, RF = 500 MH z
15.8
2.02
GAIN
15.75
Gain (dB)
15.7
15.65
15.6
15.55
4
5
NF
1.98
1.96
1.94
1.92
1.9
1.88
6
7
V
DD
(Volts)
Figure 6: IIP2, IIP3 vs. V
DD
8
9
T
A
= 25
o
C
40
37
34
30
27
24
21
18
15
12
9
6
IIP2
IIP3
IIP2 (dBm)
31
28
25
22
19
16
4
5
6
7
8
9
V
D D
(V o l t s)
Notes:
1. IIP2 measured at 986.5 MHz; Input = two tones at 55.25 MHz and 931.25 MHz at -10 dBm.
2. IIP3 measured with two tones at the input: 986.5 MHz and 992.5 MHz at -10 dBm.
Data Sheet - Rev 2.2
08/2001
IP3 (dBm)
Noise Figure (dB)
2
5
