ADET-5000
RF Power Detector
Data Sheet
Description
ADET-5000 is a wide bandwidth, wide dynamic range
temperature-compensated diode power detector for
operation from 700 MHz to 2.6 GHz. Its high sensitivity
and wide bandwidth support fast inner-loop calibration
and true envelope sampling of modulated signals for
accurate power leveling of modulated waveforms for use
in cellular handsets and data cards.
ADET-5000 features circuit technology that is aligned
optimally to work with transceivers requiring external
detection for inner-loop power control. Superb tem-
perature and voltage compensation maintains inner-
loop accuracy over extreme operating conditions. In
power-down mode, ADET-5000 presents high output
impedance to the transceiver, minimizing loading of any
other detectors connected to the transceiver detector
input line. This characteristic allows the customer to utilize
ADET-5000 to daisy-chain numerous power amplifier
couplers together with a single detector.
ADET-5000’s nominal input impedance is 100 ohms,
allowing the sensitivity and detection range to be
trimmed externally with a shunt input resistor. This allows
user-adjustability of effective coupling ratios to maximize
dynamic range and to compensate variable output
power targets and daisy-chain configurations. ADET-5000
is manufactured on an advanced InGaP HBT (hetero-
junction Bipolar Transistor) MMIC (microwave monolithic
integrated circuit) technology offering state-of-the-art
reliability, temperature stability and ruggedness
Features
Fully Temperature and Voltage Compensated Diode RF
Detector
-20 dBm to 11 dBm Power Detection Range
Small, Thin Package (1.2 x 1.5 x 0.5 mm)
Complete coverage of 3GPP bands from 700-2600 MHz
Fast Response Time and Wide Bandwidth
High Sensitivity and User-Adjustable Input Range
High Output Impedance in Power Down Mode
Low Harmonic Generation
6-pin surface mounting package
Lead-free, RoHS compliant, Green (Halogen Free)
Applications
CDMA/UMTS/LTE Handsets & Data Cards
Absolute Maximum Ratings
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value
Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal
values may result in permanent damage
Description
RF Input Power (Pin)
DC Supply / Control Voltage (Ven)
Storage Temperature (Tstg)
Max.
13
3
-30 to +125
Unit
dBm
V
C
Recommended Operating Conditions
Description
Enable Voltage (Ven
Low
High
Min.
0
2.0
-30
Typ.
0.2
2.2
800
25
Max.
0.5
2.7
1000
85
Unit
V
A
C
Enable Current (Ien @ Ven = 2.7 V)
Case Temperature
Electrical Characteristics
– Conditions: Ven = 2.2 V, T = 25° C, Zload = 100 kohm in parallel with 12 pF
Characteristics
Operating Frequency Range
Power Detect Range (Pin)
Average Output Voltage
Pin = +9 dBm
Pin = -11.5 dBm
Pin = -12.5 dBm
Pin = -12.5 dBm
Output Voltage with RF Off
Rext open (not connected)
Condition
Min.
700
-20
0.93
0.45
0.45
4.3
150
Typ.
–
–
1.10
0.48
0.47
5.3
350
450
100
Max.
2600
+11
1.30
0.50
0.49
9.3
1000
Unit
MHz
dBm
V
Power Detect Slope
Len (RF input = off )
DC Offset
RF Input Resistance
mV/dB
A
mV
ohms
2
ADET-5000 Characterization Data
1.2
1.1
1
Vdet (V)
0.9
0.8
0.7
0.6
0.5
0.4
-20
-15
-10
-5
Pin [dBm]
0
5
10
-30° C
25° C
85° C
0.52
0.51
0.5
Vdet (V)
0.49
0.48
0.47
0.46
0.45
0.44
-20
-19
-18
-17
-16 -15 -14
Pin [dBm]
-13
-12
-11
-10
-30° C
25° C
85° C
Figure 1. Detector Voltage vs. Input Power over temperature at 1900 MHz,
Ven = 2.2 V
1.10
1.00
0.90
0.80
Vdet (V)
0.70
0.60
0.50
0.40
0.30
-20.0
-15.0
-10.0
-5.0
Pin (dBm)
0.0
5.0
10.0
2.0 V
2.3 V
3.0 V
Figure 2. Detector Voltage vs. Input Power over temperature at 1900 MHz,
Ven = 2.2 V
1.1
1
0.9
Vdet (V)
0.8
0.7
0.6
0.5
0.4
-25
-20
-15
-10
-5
0
RF Input Power (dBm)
5
10
100 MHz
300 MHz
700 MHz
900 MHz
1900 MHz
2600 MHz
Figure 3. Detector Voltage vs. Input Power at 1900 MHz for Ven = 2.0 V – 3.0 V
Figure 4. Detector Voltage vs. Frequency (with 100 Ohm input resistor) from
-20 to -10 dBm input power.
1.1
1
0.9
Vdet (V)
0.8
0.7
10 dBm
5 dBm
0 dBm
-5 dBm
-10 dBm
Table 1. Typical RMS Error @ 25C for various modulation schemes.
The reference modulation for the measurement was WCDMA Rel 99
Measured
CCDF (PAR)
@ 0.1%
Composite
3.06
3.41
3.76
3.86
3.96
4.46
5.8
5.17
5.5
4.25
6.4
Waveform
0.6
0.5
0.4
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
WCDMA Rel 99
HSDPA1
HSDPA2
HSDPA3
HSDPA3
HSUPA Subtest 1
HSUPA Subtest 2
HSUPA Subtest 3
HSUPA Subtest 4
HSUPA Subtest 5
HSUPA high PAR
Typical RMS Error @ 25C (dB)
vs. WCDMA Rel 99 Modulation
Vrms for loop Vrms for loop
control voltage control voltage
@ 0dBm
@ 8dBm
0
0.14
0.19
0.2
0.11
0
0.24
0.1
0.19
-0.02
0.4
0
0.12
0.07
-0.01
-0.21
0.03
0.3
0.04
0.05
0.3
0.36
Figure 5. Detector Voltage vs. Frequency from 100-2600MHz over Input Powers,
Ven = 2.2 V
3
Package Outline
Pin 1 Mark
Footprint
Pin 1 Identification 0.1 mm x 45 deg
1
2
3
4
0.4
5
6
1.2 ±0.05
0.72
0.2
1.5 ±0.05
(All dimensions are in millimeters)
0.5 ±0.05
0.41
X-RAY TOP VIEW
0.3
PIN Description
Pin
4
5
6
Paddle
1
2
3
1
2
3
4
5
6
Paddle
Name
Ven
Pin
NC
NC
Vdet
NC
GND
Description
Detector Enable
RF Input
Not connected
Not connected
Detected Output Voltage
Not connected
Center Ground Paddle
Recommended PCB Layout
1.60
0.41
0.42
1.50
0.37
0.40
0.72
1.00
0.20
0.20
0.35
Land Pattern
1.60
1.50
0.41
0.37
0.40
0.65
0.65
0.18
0.24
0.30
Stencil Opening
0.72
1.00
0.20
Combination of Land Pattern and Stencil Opening
4
1.08
1.08
Tape Dimensions
4.00±0.10
4.00±0.10
2.00±0.05
1.50±0.10
1.75±0.10
3.50±0.05
8.00
+0.30
-0.10
1.50+0.15
0.25±0.02
5° MAX
1.69±0.05
0.65±0.05
1.41±0.05
5° MAX
A.
Notes:
1. Leader and Trailer – 200 empty pockets
2. Carrier tape dimension (unit in mm)
K.
B.
Carrier Height Information
0.33*
* with assumption 0.4mm unit height and 0.73 carrier height
Package, Reel & Tape Specifications
REEL
USER FEED DIRECTION
CARRIER
TAPE
USER
FEED
DIRECTION
XY
XY
XY
TOP VIEW
COVER TAPE
END VIEW
5
