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ADG1412YCPZ-REEL

1.5 Ω On Resistance, ±15 V/+12 V/±5 V, iCMOS®, Quad SPST Switch

器件类别:模拟混合信号IC    信号电路   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

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器件参数
参数名称
属性值
Brand Name
Analog Devices Inc
是否无铅
含铅
是否Rohs认证
符合
厂商名称
ADI(亚德诺半导体)
零件包装代码
QFN
包装说明
HVQCCN, LCC16,.16SQ,25
针数
16
制造商包装代码
CP-16-26
Reach Compliance Code
compliant
ECCN代码
EAR99
Samacsys Description
Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
其他特性
CAN ALSO OPERATES AT 12 V AND +/-15 V SUPPLY
模拟集成电路 - 其他类型
SPST
JESD-30 代码
S-XQCC-N16
JESD-609代码
e3
长度
4 mm
湿度敏感等级
3
负电源电压最大值(Vsup)
-16.5 V
负电源电压最小值(Vsup)
-4.5 V
标称负供电电压 (Vsup)
-5 V
正常位置
NO
信道数量
1
功能数量
4
端子数量
16
标称断态隔离度
80 dB
通态电阻匹配规范
0.13 Ω
最大通态电阻 (Ron)
5.4 Ω
最高工作温度
125 °C
最低工作温度
-40 °C
输出
SEPARATE OUTPUT
封装主体材料
UNSPECIFIED
封装代码
HVQCCN
封装等效代码
LCC16,.16SQ,25
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
260
电源
+-5/12/+-15 V
认证状态
Not Qualified
座面最大高度
1 mm
最大供电电压 (Vsup)
16.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
最长断开时间
380 ns
最长接通时间
510 ns
切换
BREAK-BEFORE-MAKE
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Matte Tin (Sn)
端子形式
NO LEAD
端子节距
0.65 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
40
宽度
4 mm
文档预览
Data Sheet
FEATURES
1.5 Ω on resistance
0.3 Ω on-resistance flatness
0.1 Ω on-resistance match between channels
Continuous current per channel
LFCSP: 250 mA
TSSOP: 190 mA
Fully specified at +12 V, ±15 V, and ±5 V
No V
L
supply required
3 V logic-compatible inputs
Rail-to-rail operation
16-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP
Qualified for automotive applications
1.5 Ω On Resistance, ±15 V/+12 V/±5 V,
iCMOS,
Quad SPST Switches
ADG1411/ADG1412/ADG1413
FUNCTIONAL BLOCK DIAGRAM
S1
IN1
D1
S2
IN2
D2
IN2
D2
IN1
D1
S2
IN2
D2
S1
IN1
D1
S2
S1
ADG1411
IN3
S3
IN3
D3
S4
ADG1412
S3
IN3
D3
S4
ADG1413
S3
D3
S4
06815-001
IN4
D4
IN4
D4
IN4
D4
APPLICATIONS
Automated test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Video signal routing
Communications systems
Relay replacement
SWITCHES SHOWN FOR A LOGIC 1 INPUT.
Figure 1.
GENERAL DESCRIPTION
The
ADG1411/ADG1412/ADG1413
are monolithic complemen-
tary metal-oxide semiconductor (CMOS) devices containing
four independently selectable switches designed on an
iCMOS®
process.
iCMOS
(industrial CMOS) is a modular manufacturing
process combining high voltage CMOS and bipolar technologies.
It enables the development of a wide range of high performance
analog ICs capable of 33 V operation in a footprint that no previous
generation of high voltage devices has been able to achieve.
Unlike analog ICs using conventional CMOS processes,
iCMOS
components can tolerate high supply voltages while providing
increased performance, dramatically lower power consumption,
and reduced package size.
The on-resistance profile is very flat over the full analog input
range, ensuring excellent linearity and low distortion when
switching signals.
iCMOS
construction ensures ultralow power dissipation,
making the devices ideally suited for portable and battery-
powered instruments.
The
ADG1411/ADG1412/ADG1413
contain four independent
single-pole/single-throw (SPST) switches. The
ADG1411
and
ADG1412
differ only in that the digital control logic is inverted.
The
ADG1411
switches are turned on with Logic 0 on the
appropriate control input, whereas the
ADG1412
switches are
turned on with Logic 1. The
ADG1413
has two switches with
digital control logic similar to that of the
ADG1411;
the logic is
inverted on the other two switches. Each switch conducts equally
well in both directions when on and has an input signal range
that extends to the supplies. In the off condition, signal levels up
to the supplies are blocked.
The
ADG1413
exhibits break-before-make switching action for
use in multiplexer applications. Inherent in the design is low
charge injection, which results in minimum transients when the
digital inputs are switched.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
2.6 Ω maximum on resistance over temperature.
Minimum distortion.
Ultralow power dissipation: <0.03 μW.
16-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP.
Rev. C
Document Feedback
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2008–2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
ADG1411/ADG1412/ADG1413
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
±15 V Dual Supply ....................................................................... 3
+12 V Single Supply ..................................................................... 4
±5 V Dual Supply ......................................................................... 5
Data Sheet
Absolute Maximum Ratings ............................................................6
ESD Caution...................................................................................6
Pin Configurations and Function Descriptions ............................7
Typical Performance Characteristics ..............................................8
Terminology .................................................................................... 12
Test Circuits..................................................................................... 13
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 16
Automotive Products ................................................................. 16
REVISION HISTORY
3/16—Rev. B to Rev. C
Changed CP-16-13 to CP-16-26 .................................. Throughout
Changes to Figure 2, Figure 3, and Table 5 ................................... 7
Updated Outline Dimensions ....................................................... 15
Changes to Ordering Guide .......................................................... 16
3/11—Rev. A to Rev. B
Changes to Features Section............................................................ 1
Changes to Table 5, Added Exposed Pad Notation...................... 3
Updated Outline Dimensions ....................................................... 15
Changes to Ordering Guide .......................................................... 40
Added Automotive Products Section........................................... 40
3/09—Rev. 0 to Rev. A
Changes to Power Requirements, I
DD
, Digital Inputs = 5 V
Parameter, Table 1 .............................................................................3
Changes to Power Requirements, I
DD
, Digital Inputs = 5 V
Parameter Table 2 ..............................................................................4
5/08—Revision 0: Initial Version
Rev. C | Page 2 of 16
Data Sheet
SPECIFICATIONS
±15 V DUAL SUPPLY
V
DD
= 15 V ± 10%, V
SS
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, R
ON
On-Resistance Match
Between Channels, ∆R
ON
On-Resistance Flatness, R
FLAT(ON)
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off)
Drain Off Leakage, I
D
(Off)
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
1
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
(ADG1413 Only)
Charge Injection, Q
INJ
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion + Noise
−3 dB Bandwidth
Insertion Loss
C
S
(Off)
C
D
(Off)
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
I
DD
I
SS
V
DD
/V
SS
1
ADG1411/ADG1412/ADG1413
25°C
−40°C to +85°C
−40°C to +125°C
V
DD
to V
SS
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
% typ
MHz typ
dB typ
pF typ
pF typ
pF typ
µA typ
µA max
µA typ
µA max
µA typ
µA max
V min/V max
Test Conditions/Comments
1.5
1.8
0.1
0.18
0.3
0.36
±0.03
±0.55
±0.03
±0.55
±0.15
±2
2.3
2.6
V
S
= ±10 V, I
S
= −10 mA; see Figure 23
V
DD
= +13.5 V, V
SS
= −13.5 V
V
S
= ±10 V , I
S
= −10 mA
0.19
0.4
0.21
0.45
V
S
= ±10 V, I
S
= −10 mA
V
DD
= +16.5 V, V
SS
= −16.5 V
V
S
= ±10 V, V
D
=
∓10
V; see Figure 24
V
S
= V
D
= ±10 V; see Figure 25
V
S
= ±10 V, V
D
=
∓10
V; see Figure 24
±2
±2
±4
±12.5
±12.5
±30
2.0
0.8
0.005
±0.1
3.5
100
150
90
120
25
V
IN
= V
GND
or V
DD
170
140
190
160
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 10 V; see Figure 30
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 10 V; see Figure 30
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 10 V; see Figure 31
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 32
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 26
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 27
R
L
= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz;
see Figure 29
R
L
= 50 Ω, C
L
= 5 pF; see Figure 28
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 28
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
DD
= +16.5 V, V
SS
= −16.5 V
Digital inputs = 0 V or V
DD
Digital inputs = 5 V
Digital inputs = 0 V or V
DD
GND = 0 V
10
−20
−80
−100
0.014
170
−0.35
23
23
116
0.001
1
220
380
0.001
1
±4.5/±16.5
Guaranteed by design; not subject to production test.
Rev. C | Page 3 of 16
ADG1411/ADG1412/ADG1413
+12 V SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, R
ON
On-Resistance Match
Between Channels, ∆R
ON
On-Resistance Flatness, R
FLAT(ON)
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off)
Drain Off Leakage, I
D
(Off)
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
1
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
(ADG1413 Only)
Charge Injection, Q
INJ
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
Insertion Loss
C
S
(Off)
C
D
(Off)
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
25°C
−40°C to +85°C
−40°C to +125°C
0 V to V
DD
2.8
3.5
0.13
0.21
0.6
1.1
±0.02
±0.55
±0.02
±0.55
±0.15
±1.5
4.3
4.8
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
dB typ
pF typ
pF typ
pF typ
µA typ
µA max
µA typ
µA max
V min/V max
Data Sheet
Test Conditions/Comments
V
S
= 0 V to 10 V, I
S
= −10 mA; see Figure 23
V
DD
= 10.8 V, V
SS
= 0 V
V
S
= 0 V to 10 V, I
S
= −10 mA
0.23
1.2
0.25
1.3
V
S
= 0 V to 10 V, I
S
= −10 mA
V
DD
= 10.8 V, V
SS
= 0 V
V
S
= 1 V/10 V, V
D
= 10 V/0 V; see Figure 24
V
S
= 1 V/10 V, V
D
= 10 V/0 V; see Figure 24
V
S
= V
D
= 1 V/10 V; see Figure 25
±2
±2
±4
±12.5
±12.5
±30
2.0
0.8
0.001
±0.1
3.5
170
250
75
135
100
V
IN
= V
GND
or V
DD
295
165
330
190
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 8 V; see Figure 30
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 8 V; see Figure 30
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 8 V; see Figure 31
V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 32
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 26
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 27
R
L
= 50 Ω, C
L
= 5 pF; see Figure 28
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 28
V
S
= 6 V, f = 1 MHz
V
S
= 6 V, f = 1 MHz
V
S
= 6 V, f = 1 MHz
V
DD
= 13.2 V
Digital inputs = 0 V or V
DD
Digital inputs = 5 V
GND = 0 V, V
SS
= 0 V
40
30
−80
−100
130
−0.5
38
40
104
0.001
1
220
V
DD
1
380
5/16.5
Guaranteed by design; not subject to production test.
Rev. C | Page 4 of 16
Data Sheet
±5 V DUAL SUPPLY
V
DD
= 5 V ± 10%, V
SS
= −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, R
ON
On-Resistance Match
Between Channels, ∆R
ON
On-Resistance Flatness, R
FLAT(ON)
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off)
Drain Off Leakage, I
D
(Off)
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
1
t
ON
t
OFF
Break-Before-Make Time Delay,
t
D
(ADG1413 Only)
Charge Injection, Q
INJ
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion + Noise
−3 dB Bandwidth
Insertion Loss
C
S
(Off)
C
D
(Off)
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
I
SS
V
DD
/V
SS
1
ADG1411/ADG1412/ADG1413
25°C
−40°C to +85°C
−40°C to +125°C
V
DD
to V
SS
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
% typ
MHz typ
dB typ
pF typ
pF typ
pF typ
µA typ
µA max
µA typ
µA max
V min/V max
Test Conditions/Comments
3.3
4
0.13
0.22
0.9
1.1
±0.03
±0.55
±0.03
±0.55
±0.05
±1.0
4.9
5.4
V
S
= ±4.5 V, I
S
= −10 mA; see Figure 23
V
DD
= +4.5 V, V
SS
= −4.5 V
V
S
= ±4.5 V, I
S
= −10 mA
0.23
1.24
0.25
1.31
V
S
= ±4.5 V; I
S
= −10 mA
V
DD
= +5.5 V, V
SS
= −5.5 V
V
S
= ±4.5 V, V
D
=
∓4.5
V; see Figure 24
V
S
= V
D
= ±4.5 V; see Figure 25
V
S
= ±4.5 V, V
D
=
∓4.5
V; see Figure 24
±2
±2
±4
±12.5
±12.5
±30
2.0
0.8
0.001
±0.1
3.5
275
400
175
290
100
V
IN
= V
GND
or V
DD
465
320
510
380
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure 30
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure 30
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 3 V; see Figure 31
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 32
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 26
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 27
R
L
= 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz;
see Figure 29
R
L
= 50 Ω, C
L
= 5 pF; see Figure 28
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 28
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
DD
= +5.5 V, V
SS
= −5.5 V
Digital inputs = 0 V or V
DD
Digital inputs = 0 V or V
DD
GND = 0 V
50
30
−80
−100
0.03
130
−0.5
32
33
116
0.001
1.0
0.001
1.0
±4.5/±16.5
Guaranteed by design; not subject to production test.
Rev. C | Page 5 of 16
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参数对比
与ADG1412YCPZ-REEL相近的元器件有:ADG1413YCPZ-REEL、ADG1411YCPZ-REEL。描述及对比如下:
型号 ADG1412YCPZ-REEL ADG1413YCPZ-REEL ADG1411YCPZ-REEL
描述 1.5 Ω On Resistance, ±15 V/+12 V/±5 V, iCMOS®, Quad SPST Switch 1.5 Ω On Resistance, ±15 V/+12 V/±5 V, iCMOS®, Quad SPST Switch 1.5 Ω On Resistance, ±15 V/+12 V/±5 V, iCMOS®, Quad SPST Switch
Brand Name Analog Devices Inc Analog Devices Inc Analog Devices Inc
是否无铅 含铅 含铅 含铅
是否Rohs认证 符合 符合 符合
厂商名称 ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体)
零件包装代码 QFN QFN QFN
包装说明 HVQCCN, LCC16,.16SQ,25 HVQCCN, LCC16,.16SQ,25 HVQCCN, LCC16,.16SQ,25
针数 16 16 16
制造商包装代码 CP-16-26 CP-16-26 CP-16-26
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
其他特性 CAN ALSO OPERATES AT 12 V AND +/-15 V SUPPLY CAN ALSO OPERATES AT 12 V AND +/-15 V SUPPLY CAN ALSO OPERATES AT 12 V AND +/-15 V SUPPLY
模拟集成电路 - 其他类型 SPST SPST SPST
JESD-30 代码 S-XQCC-N16 S-XQCC-N16 S-XQCC-N16
JESD-609代码 e3 e3 e3
长度 4 mm 4 mm 4 mm
湿度敏感等级 3 3 3
负电源电压最大值(Vsup) -16.5 V -16.5 V -16.5 V
负电源电压最小值(Vsup) -4.5 V -4.5 V -4.5 V
标称负供电电压 (Vsup) -5 V -5 V -5 V
正常位置 NO NO/NC NC
信道数量 1 1 1
功能数量 4 4 4
端子数量 16 16 16
标称断态隔离度 80 dB 80 dB 80 dB
通态电阻匹配规范 0.13 Ω 0.13 Ω 0.13 Ω
最大通态电阻 (Ron) 5.4 Ω 5.4 Ω 5.4 Ω
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C
输出 SEPARATE OUTPUT SEPARATE OUTPUT SEPARATE OUTPUT
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 HVQCCN HVQCCN HVQCCN
封装等效代码 LCC16,.16SQ,25 LCC16,.16SQ,25 LCC16,.16SQ,25
封装形状 SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 260 260 260
电源 +-5/12/+-15 V +-5/12/+-15 V +-5/12/+-15 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1 mm 1 mm 1 mm
最大供电电压 (Vsup) 16.5 V 16.5 V 16.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 YES YES YES
最长断开时间 380 ns 380 ns 380 ns
最长接通时间 510 ns 510 ns 510 ns
切换 BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE
技术 CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 NO LEAD NO LEAD NO LEAD
端子节距 0.65 mm 0.65 mm 0.65 mm
端子位置 QUAD QUAD QUAD
处于峰值回流温度下的最长时间 40 40 40
宽度 4 mm 4 mm 4 mm
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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