LC
2
MOS Precision
Mini-DIP Analog Switch
ADG419
FEATURES
44 V supply maximum ratings
V
SS
to V
DD
analog signal range
Low on resistance: <35 Ω
Ultralow power dissipation: < 35 μW
Fast transition time: 160 ns maximum
Break-before-make switching action
Plug-in replacement for DG419
FUNCTIONAL BLOCK DIAGRAM
D
S2
S1
IN
ADG419
SWITCH SHOWN FOR A
LOGIC 1 INPUT
07850-001
Figure 1.
APPLICATIONS
Precision test equipment
Precision instrumentation
Battery-powered systems
Sample hold systems
GENERAL DESCRIPTION
The ADG419 is a monolithic CMOS SPDT switch. This switch
is designed on an enhanced LC
2
MOS process that provides low
power dissipation yet gives high switching speed, low on resistance,
and low leakage currents.
The on resistance profile of the ADG419 is very flat over the full
analog input range, ensuring excellent linearity and low distortion.
The part also exhibits high switching speed and high signal
bandwidth. CMOS construction ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.
Each switch of the ADG419 conducts equally well in both
directions when on and has an input signal range that extends
to the supplies. In the off condition, signal levels up to the
supplies are blocked. The ADG419 exhibits break-before-make
switching action.
PRODUCT HIGHLIGHTS
1.
Extended Signal Range.
The ADG419 is fabricated on an enhanced LC
2
MOS
process, giving an increased signal range that extends to
the supply rails.
Ultralow Power Dissipation.
Low R
ON
.
Single-Supply Operation.
For applications where the analog signal is unipolar, the
ADG419 can be operated from a single rail power supply.
The part is fully specified with a single 12 V power supply
and remains functional with single supplies as low as 5 V.
2.
3.
4.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2009 Analog Devices, Inc. All rights reserved.
ADG419
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Dual Supply ................................................................................... 3
Single Supply ................................................................................. 4
Absolute Maximum Ratings ............................................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions..............................6
Typical Performance Characteristics ..............................................7
Test Circuits ........................................................................................9
Terminology .................................................................................... 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 13
REVISION HISTORY
8/09—Rev. B to Rev. C
Updated Format .................................................................. Universal
Changes to Table 1 ............................................................................ 3
Changes to Table 2 ............................................................................ 4
Updated Outline Dimensions ....................................................... 12
Changes to Ordering Guide .......................................................... 13
Rev. B | Page 2 of 16
ADG419
SPECIFICATIONS
DUAL SUPPLY
V
DD
= 15 V ± 10%, V
SS
= −15 V ± 10%, V
L
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
B Version
−40°C to
−40°C to
+85°C
+125°C
V
SS
to V
DD
25
35
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
±5
±15
45
45
25
35
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
±15
T Version
−55°C to
+25°C +125°C
V
SS
to V
DD
45
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns max
ns typ
ns min
dB typ
dB typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
μA typ
μA max
V
IN
= V
INL
or V
INH
V
D
= ±12.5 V, I
S
= −10 mA
V
DD
= +13.5 V, V
SS
= −13.5 V
V
DD
= +16.5 V, V
SS
= −16.5 V
V
D
= ±15.5 V, V
S
=
∓15.5
V;
see Figure 12
V
D
= ±15.5 V, V
S
=
∓15.5
V;
see Figure 12
V
S
= V
D
= ±15.5 V; see Figure 13
Parameter
1
ANALOG SWITCH
Analog Signal Range
R
ON
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off )
+25°C
Unit
Test Conditions/Comments
Drain Off Leakage, I
D
(Off )
±5
±5
2.4
0.8
±0.005
±0.5
±30
±30
2.4
0.8
±0.005
±0.5
200
±30
±30
2.4
0.8
±0.005
±0.5
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
Break-Before-Make Time Delay, t
D
160
30
5
80
90
6
55
0.0001
1
0.0001
1
0.0001
1
200
145
30
5
80
70
6
55
0.0001
1
0.0001
1
0.0001
1
200
R
L
= 300 Ω, C
L
= 35 pF; V
S1
= ±10 V,
V
S2
=
∓10
V; see Figure 14
R
L
= 300 Ω, C
L
= 35 pF;
V
S1
= V
S2
= ±10 V; see Figure 15
R
L
= 50 Ω, f = 1 MHz; see Figure 16
R
L
= 50 Ω, f = 1 MHz; see Figure 17
f = 1 MHz
f = 1 MHz
V
DD
= +16.5 V, V
SS
= −16.5 V
V
IN
= 0 V or 5 V
Off Isolation
Channel-to-Channel Crosstalk
C
S
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
I
SS
I
L
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
V
L
= 5.5 V
1
2
Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. B | Page 3 of 16
ADG419
SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, V
L
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
B Version
−40°C to −40°C to
+85°C
+125°C
0 to V
DD
40
60
LEAKAGE CURRENT
Source OFF Leakage, I
S
(Off )
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
±5
±15
70
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
±15
40
70
T Version
−55°C to
+25°C +125°C
0 to V
DD
Parameter
1
ANALOG SWITCH
Analog Signal Range
R
ON
+25°C
Unit
V
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns max
ns typ
dB typ
dB typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
Test Conditions/Comments
V
D
= 3 V, 8.5 V, I
S
= −10 mA
V
DD
= 10.8 V
V
DD
= 13.2 V
V
D
= 12.2 V/1 V, V
S
= 1 V/12.2 V;
see Figure 12
V
D
= 12.2 V/1 V, V
S
= 1 V/12.2 V;
see Figure 12
V
S
= V
D
= 12.2 V/1 V; see Figure 13
Drain OFF Leakage, I
D
(Off )
±5
±5
2.4
0.8
±0.005
±0.5
±30
±30
2.4
0.8
±0.005
±0.5
250
±30
±30
2.4
0.8
±0.005
±0.5
Channel ON Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
Break-Before-Make Time Delay, t
D
Off Isolation
Channel-to-Channel Crosstalk
C
S
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
I
L
V
IN
= V
INL
or V
INH
180
60
80
90
13
65
0.0001
1
0.0001
1
250
170
60
80
70
13
65
0.0001
1
0.0001
1
250
R
L
= 300 Ω, C
L
= 35 pF; V
S1
= 0 V/8 V,
V
S2
= 8 V/0 V; see Figure 14
R
L
= 300 Ω, C
L
= 35 pF;
V
S1
= V
S2
= 8 V; see Figure 15
R
L
= 50 Ω, f = 1 MHz; see Figure 16
R
L
= 50 Ω, f = 1 MHz; see Figure 17
f = 1 MHz
f = 1 MHz
V
DD
= 13.2 V
V
IN
= 0 V or 5 V
V
L
= 5.5 V
2.5
2.5
2.5
2.5
2.5
2.5
1
2
Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 16
ADG419
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise noted.
Table 3.
Parameter
V
DD
to V
SS
V
DD
to GND
V
SS
to GND
V
L
to GND
Analog, Digital Inputs
1
Rating
44 V
−0.3 V to +25 V
+0.3 V to −25 V
−0.3 V to V
DD
+ 0.3 V
V
SS
− 2 V to V
DD
+ 2 V
or 30 mA, whichever
occurs first
30 mA
100 mA
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Continuous Current, S or D
Peak Current, S or D (Pulsed at 1 ms,
10% Duty-Cycle Maximum)
Operating Temperature Range
Industrial (B Version)
Extended (T Version)
Storage Temperature Range
Junction Temperature
CERDIP Package, Power Dissipation
θ
JA
, Thermal Impedance
Lead Temperature, Soldering (10 sec)
PDIP Package, Power Dissipation
θ
JA
, Thermal Impedance
Lead Temperature, Soldering (10 sec)
SOIC Package, Power Dissipation
θ
JA
, Thermal Impedance
MSOP Package, Power Dissipation
θ
JA
, Thermal Impedance
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
1
−40°C to +125°C
−55°C to +125°C
−65°C to +150°C
150°C
600 mW
110°C/W
300°C
400 mW
100°C/W
260°C
400 mW
155°C/W
315 mW
205°C/W
215°C
220°C
Overvoltages at IN, S or D is clamped by internal diodes. Limit current to the
maximum ratings given.
Rev. B | Page 5 of 16
