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FEATURES
44 V Supply Maximum Ratings
V
SS
to V
DD
Analog Signal Range
Low On Resistance (60
typ)
Low Power Consumption (1.6 mW max)
Low Charge Injection (<4 pC typ)
Fast Switching
Break-Before-Make Switching Action
Plug-In Replacement for DG428/DG429
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Communication Systems
Avionics and Military Systems
Microprocessor Controlled Analog Systems
Medical Instrumentation
LC
2
MOS Latchable 4-/8-Channel
High Performance Analog Multiplexers
ADG428/ADG429
FUNCTIONAL BLOCK DIAGRAMS
ADG428
S1
S1A
DA
S4A
D
S1B
DB
S8
S4B
ADG429
DECODERS/DRIVERS
LATCHES
WR
A2
A1
A0
EN
RS
WR
DECODERS/DRIVERS
LATCHES
RS
A1
A0
EN
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG428 and ADG429 are monolithic CMOS analog
multiplexers comprising eight single channels and four differen-
tial channels respectively. On-chip address and control latches
facilitate microprocessor interfacing. The ADG428 switches one
of eight inputs to a common output as determined by the 3-bit
binary address lines A0, A1 and A2. The ADG429 switches one
of four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device.
When disabled, all channels are switched OFF. All the control
inputs, address and enable inputs are TTL compatible over the
full specified operating temperature range. This makes the part
suitable for bus-controlled systems such as data acquisition sys-
tems, process controls, avionics and ATEs because the TTL-
compatible address latches simplify the digital interface design
and reduce the board space required.
The ADG428/ADG429 are designed on an enhanced LC
2
MOS
process that provides low power dissipation yet gives high switching
speed and low on resistance. Each channel conducts equally well
in both directions when ON and has an input signal range that
extends to the supplies. In the OFF condition, signal levels up to
the supplies are blocked. All channels exhibit break-before-make
switching action, preventing momentary shorting when switching
channels. Inherent in the design is low charge injection for mini-
mum transients when switching the digital inputs.
The ADG428/ADG429 are improved replacements for the
DG428/DG429 Analog Multiplexers.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
1. Extended Signal Range
The ADG428/ADG429 are fabricated on an enhanced
LC
2
MOS process, giving an increased signal range that ex-
tends to the supply rails.
2. Low Power Dissipation
3. Low R
ON
4. Single/Dual Supply Operation
5. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG428/ADG429 can be operated from a single rail power
supply. The parts are fully specified with a single +12 V
power supply and will remain functional with single supplies
as low as +5 V.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999
ADG428/ADG429–SPECIFICATIONS
DUAL SUPPLY
1
(V
Parameter
ANALOG SWITCH
Analog Signal Range
R
ON
∆R
ON
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
ADG428
ADG429
Channel ON Leakage I
D
, I
S
(ON)
ADG428
ADG429
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DD
= +15 V, V
SS
= –15 V, GND = 0 V,
WR
= 0 V,
RS
= 2.4 V unless otherwise noted)
B Version
–40 C to
+25 C +85 C
V
SS
to V
DD
60
100
10
125
60
100
10
T Version
–55 C to
+25 C +125 C
V
SS
to V
DD
125
Units
V
Ω
typ
Ω
max
% max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA max
nA max
V min
V max
µA
max
pF typ
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns min
ns min
ns min
ns min
pC typ
dB typ
dB min
dB typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
D
=
±
10 V, I
S
= –1 mA
–10 V < V
S
< 10 V, I
S
= –1 mA
V
D
=
±
10 V, V
S
=
Test Circuit 2
V
D
=
±
10 V, V
S
=
Test Circuit 3
10 V;
10 V;
±
0.03
±
0.3
±
0.5
±
50
±
0.07
±
1
±
0.05
±
1
±
1
±
1
±
0.7
±
100
±
0.5
±
50
±
100
±
50
2.4
0.8
±
0.1
8
±
1
±
0.03
±
0.3
±
0.5
±
50
±
0.07
±
1
±
0.05
±
1
±
1
±
1
±
0.7
±
100
±
0.5
±
50
±
100
±
50
2.4
0.8
±
0.1
8
110
250
±
1
V
S
= V
D
=
±
10 V;
Test Circuit 4
V
IN
= 0 or V
DD
f = 1 MHz
R
L
= 1 MΩ, C
L
= 35 pF;
V
S1
=
±10
V, V
S8
= 10 V;
Test Circuit 5
R
L
= 1 kΩ, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 6
R
L
= 1 kΩ, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 7
R
L
= 1 kΩ, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 7
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
110
250
t
OPEN
t
ON
(EN,
WR)
t
OFF
(EN,
RS)
t
W
, Write Pulsewidth
t
S
, Address, Enable Setup Time
t
H
, Address, Enable Hold Time
t
RS
, Reset Pulsewidth
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
S
(OFF)
C
D
(OFF)
ADG428
ADG429
C
D
, C
S
(ON)
ADG428
ADG429
POWER REQUIREMENTS
I
DD
I
SS
115
150
105
150
300
10
225
300
100
100
10
100
300
10
115
150
105
150
225
300
100
100
10
100
4
–75
–60
85
11
40
20
54
34
20
100
0.001
5
4
–75
–60
85
11
40
20
54
34
20
100
0.001
5
V
S
= +5 V
V
S
= 0 V, R
S
= 0
Ω,
C
L
= 10 nF;
Test Circuit 10
R
L
= 1 kΩ, C
L
= 15 pF, f = 100 kHz;
V
S
= 7 V rms, V
EN
= 0 V; Test Circuit 11
R
L
= 1 kΩ, C
L
= 15 pF, f = 100 kHz;
Test Circuit 12
f = 1 MHz
f = 1 MHz
f = 1 MHz
pF typ
pF typ
µA
typ
µA
max
µA
typ
µA
max
V
IN
= 0 V, V
EN
= 0 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. C
ADG428/ADG429
SINGLE SUPPLY
1
(V
Parameter
ANALOG SWITCH
Analog Signal Range
R
ON
∆R
ON
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
ADG428
ADG429
Channel ON Leakage I
D
, I
S
(ON)
ADG428
ADG429
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
t
OPEN
t
ON
(EN,
WR)
t
OFF
(EN,
RS)
t
W
, Write Pulsewidth
t
S
, Address, Enable Setup Time
t
H
, Address, Enable Hold Time
t
RS
, Reset Pulsewidth
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
S
(OFF)
C
D
(OFF)
ADG428
ADG429
C
D
, C
S
(ON)
ADG428
ADG429
POWER REQUIREMENTS
I
DD
DD
= +12 V, V
SS
= 0 V, GND = 0 V,
WR
= 0 V,
RS
= 2.4 V unless otherwise noted)
B Version
–40 C to
+25 C +85 C
0 to V
DD
90
200
10
±
0.005
±
0.5
±
50
±
0.015
±
1
±
100
±
0.008
±
1
±
50
±
0.02
±
1
±
0.01
±
1
±
100
±
50
2.4
0.8
±
1
8
250
350
25
200
300
80
300
8
250
350
25
200
300
80
300
10
±
0.005
±
0.5
±
0.015
±
1
±
0.008
±
1
±
0.02
±
1
±
0.01
±
1
90
200
T Version
–55 C to
+25 C +125 C
0 to V
DD
Units
V
Ω
typ
Ω
max
% max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA max
nA max
V min
V max
µA
max
pF typ
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns min
ns min
ns min
ns min
pC typ
dB typ
dB min
dB typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
D
= +10 V, I
S
= –500
µA
0 V < V
S
< 10 V, I
S
= –1 mA
V
D
= 10 V/0 V, V
S
= 0 V/10 V;
Test Circuit 2
V
D
= 10 V/0 V, V
S
= 0 V/10 V;
Test Circuit 3
±
50
±
100
±
50
±
100
±
50
2.4
0.8
±
1
V
S
= V
D
= 10 V/0 V;
Test Circuit 4
V
IN
= 0 or V
DD
f = 1 MHz
R
L
= 1 MΩ, C
L
= 35 pF;
V
S1
= 10 V/0 V, V
S8
= 0 V/10 V;
Test Circuit 5
R
L
= 1 kΩ, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 6
R
L
= 1 kΩ, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 7
R
L
= 1 kΩ, C
L
= 35 pF;
V
S
= +5 V; Test Circuit 7
450
10
400
400
100
100
10
100
450
10
400
400
100
100
10
100
4
–75
–60
85
11
40
20
54
34
20
100
4
–75
–60
85
11
40
20
54
34
20
100
V
S
= +5 V
V
S
= 6 V, R
S
= 0
Ω,
C
L
= 10 nF;
Test Circuit 10
R
L
= 1 kΩ, C
L
= 15 pF, f = 100 kHz;
V
S
= 7 V rms, V
EN
= 0 V; Test Circuit 11
R
L
= 1 kΩ, C
L
= 15 pF, f = 100 kHz;
Test Circuit 12
f = 1 MHz
f = 1 MHz
f = 1 MHz
pF typ
pF typ
µA
typ
µA
max
V
IN
= 0 V, V
EN
= 0 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. C
–3–
ADG428/ADG429
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted.)
ADG428 PIN CONFIGURATIONS
DIP/SOIC
A0
WR
1
A0
2
EN
3
V
SS 4
S1
5
18
RS
17
A1
16
A2
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
Analog, Digital Inputs
2
. . . . . . . . . . V
SS
– 2 V to V
DD
+ 2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 900 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 73°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 470 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 115°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
PLCC Package, Power Dissipation . . . . . . . . . . . . . . . 800 mW
θ
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 90°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at A, EN,
WR, RS,
S or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
PLCC
WR
NC
RS
20
3
2
1
A1
19
18
A2
17
GND
16
V
DD
15
S5
14
S6
13
EN
4
V
SS 5
S1
6
S2
7
S3
8
PIN 1
IDENTIFIER
ADG428
15
GND
ADG428
TOP VIEW
(Not to Scale)
TOP VIEW
14
V
DD
(Not to Scale)
13
S5
S2
6
S3
7
S4
8
D
9
12
S6
11
S7
10
S8
9
10
11
12
NC
S4
S8
RS
20
NC = NO CONNECT
ADG429 PIN CONFIGURATIONS
DIP
A0
WR
1
A0
2
EN
3
V
SS 4
S1A
5
18
RS
17
A1
16
GND
PLCC
WR
NC
A1
19
18
GND
17
V
DD
16
S1B
15
S2B
14
S3B
9
10
11
12
13
3
2
1
EN
4
V
SS 5
S1A
6
S2A
7
S3A
8
PIN 1
IDENTIFIER
ADG429
15
V
DD
ADG429
TOP VIEW
(Not to Scale)
TOP VIEW
14
S1B
(Not to Scale)
13
S2B
S2A
6
S3A
7
S4A
8
DA
9
12
S3B
11
S4B
10
DB
DA
NC
S4A
DB
NC = NO CONNECT
ORDERING GUIDE
Model
1
ADG428BN
ADG428BP
ADG428BR
ADG428TQ
ADG429BN
ADG429BP
ADG429TQ
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
–55°C to +125°C
Package Options
2
N-18
P-20A
R-18
Q-18
N-18
P-20A
Q-18
NOTES
1
For availability of MIL-STD-883, Class B processed parts, contact factory.
2
N = Plastic DIP; P = Plastic Leaded Chip Carrier (PLCC); Q = Cerdip;
R = Small Outline IC (SOIC).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG428/ADG429 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
S4B
S7
D
REV. C
