a
FEATURES
+1.8 V to +5.5 V Single Supply
4 (Max) On Resistance
0.75 (Typ) On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead SOIC Package
Fast Switching Times
t
ON
20 ns
t
OFF
6 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
Low Voltage 4
CMOS
SPDT Switch
ADG719
D
FUNCTIONAL BLOCK DIAGRAM
ADG719
S2
S1
IN
SWITCHES SHOWN FOR A LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
GENERAL DESCRIPTION
1. +1.8 V to +5.5 V Single Supply Operation. The ADG719
offers high performance, including low on resistance and fast
switching times and is fully specified and guaranteed with
+3 V and +5 V supply rails.
2. Very Low R
ON
(4
Ω
max at 5 V, 10
Ω
max at 3 V). At 1.8 V
operation, R
ON
is typically 40
Ω
over the temperature range.
3. On-Resistance Flatness (R
FLAT(ON)
) (0.75
Ω
typ).
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
ON
/t
OFF.
7. Tiny 6-lead SOT-23 and 8-lead
µSOIC
packages.
The ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance and
low leakage currents.
The ADG719 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices.
Each switch of the ADG719 conducts equally well in both di-
rections when on. The ADG719 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719 is available in a 6-lead SOT-23 package and an
8-lead
µSOIC
package.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1998
ADG719–SPECIFICATIONS
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (∆R
ON
)
On-Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
0.75
1
(V
DD
= +5 V
noted.)
10%, GND = 0 V. All specifications –40 C to +85 C, unless otherwise
B Version
–40 C to
+25 C
+85 C
0 V to V
DD
5
Units
V
Ω
max
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
Test Conditions/Comments
4
V
S
= 0 V to V
DD
, I
S
= –10 mA
Test Circuit 1
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= +5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
Test Circuit 2
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V
Test Circuit 3
0.1
0.4
1.2
±
0.01
±
0.25
±
0.01
±
0.25
±
0.35
±
0.35
2.4
0.8
0.005
±
0.1
V
IN
= V
INL
or V
INH
14
20
3
6
8
1
–67
–87
–62
–82
200
7
27
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF,
V
S1
= V
S2
= 3 V, Test Circuit 5
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, Test Circuit 8
0.001
1.0
µA
typ
µA
max
V
DD
= +5.5 V
Digital Inputs = 0 V or 5 V
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
SPECIFICATIONS
1
(V
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (∆R
ON
)
ADG719
= +3 V
10%, GND = 0 V. All specifications –40 C to +85 C, unless otherwise noted.)
B Version
–40 C to
+25 C
+85 C
0 V to V
DD
7
10
0.1
0.4
2.5
±
0.01
±
0.25
±
0.01
±
0.25
DD
Units
V
Ω
typ
Ω
max
Ω
typ
Ω
max
Ω
typ
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
Test Conditions/Comments
6
V
S
= 0 V to V
DD
, I
S
= –10 mA,
Test Circuit 1
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= +3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V,
Test Circuit 2
V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V,
Test Circuit 3
On-Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
±
0.35
±
0.35
2.0
0.4
0.005
±
0.1
V
IN
= V
INL
or V
INH
16
24
4
7
8
1
–67
–87
–62
–82
200
7
27
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
= 2 V, Test Circuit 5
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, Test Circuit 8
0.001
1.0
µA
typ
µA
max
V
DD
= +3.3 V
Digital Inputs = 0 V or 3 V
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–3–
ADG719
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted)
TERMINOLOGY
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
µSOIC
Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
SOT-23 Package, Power Dissipation . . . . . . . . . . . . . . 282 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I. Truth Table
ADG719 IN
0
1
Switch S1
ON
OFF
Switch S2
OFF
ON
PIN CONFIGURATIONS
6-Lead SOT-23
(RT-6)
IN
1
V
DD 2
6
8-Lead SOIC
(RM-8)
S2
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
Ohmic resistance between D and S.
On resistance match between any two channels
i.e., R
ON
max – R
ON
min.
R
FLAT(ON)
Flatness is defined as the difference between the
maximum and minimum value of on resistance as
measured over the specified analog signal range.
Source Leakage Current with the switch “OFF.”
I
S
(OFF)
I
D
, I
S
(ON) Channel Leakage Current with the switch “ON.”
V
D
(V
S
)
Analog Voltage on Terminals D, S.
C
S
(OFF)
“OFF” Switch Source Capacitance.
C
D
(OFF)
“OFF” Switch Drain Capacitance.
C
D
, C
S
(ON) “ON” Switch Capacitance.
t
ON
Delay between applying the digital control input
and the output switching on.
t
OFF
Delay between applying the digital control input
and the output switching off.
t
D
“OFF” time or “ON” time measured between the
90% points of both switches, when switching
from one address state to another.
Crosstalk
A measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through
an “OFF” switch.
Bandwidth The frequency at which the output is attenuated
by –3 dBs.
On Response The frequency reponse of the “ON” switch.
On Loss
The voltage drop across the “ON” switch seen on
the On Response vs. Frequency plot as how many
dBs the signal is away from 0 dB at very low
frequencies.
V
DD
GND
S
D
IN
R
ON
∆R
ON
D
1
S1
2
8
S2
TOP VIEW
5
D
(Not to Scale)
4
GND
3
S1
ADG719
ADG719
7
NC
TOP VIEW
GND
3
(Not to Scale)
6
IN
V
DD 4
5
NC
NC = NO CONNECT
ORDERING GUIDE
Model
ADG719BRM
ADG719BRT
Temperature Range
–40°C to +85°C
–40°C to +85°C
Brand*
S5B
S5B
Package Description
µSOIC
(microSmall Outline IC)
SOT-23 (Plastic Surface Mount)
Package Option
RM-8
RT-6
*Brand = Due to package size limitations, these three characters represent the part number.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG719 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. A
Typical Performance Characteristics– ADG719
6.0
5.5
5.0
4.5
4.0
3.5
R
ON
–
3.0
2.5
2.0
1.5
1.0
10n
100
I
SUPPLY
– A
10m
V
DD
= 2.7V
V
DD
= +5V
T
A
= +25 C
1m
V
DD
= 3.0V
V
DD
= 4.5V
10
1
V
DD
= 5.0V
100n
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – V
1n
1
10
100
1k
10k
100k
FREQUENCY – Hz
1M
10M
100M
Figure 1. On Resistance as a Function of V
D
(V
S
) Single
Supplies
Figure 4. Supply Current vs. Input Switching Frequency
6.0
5.5
5.0
4.5
4.0
–40 C
3.5
R
ON
–
–30
V
DD
= +3V
+85 C
OFF ISOLATION – dB
V
DD
= +5V, +3V
–40
–50
–60
–70
–80
–90
–100
–110
–120
+25 C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
1.5
2.0
2.5
0.5
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – V
3.0
–130
10k
100k
1M
10M
FREQUENCY – Hz
100M
Figure 2. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 3 V
Figure 5. Off Isolation vs. Frequency
6.0
5.5
5.0
4.5
V
DD
= +5V
–30
V
DD
= +5V, +3V
–40
–50
CROSSTALK – dB
3.0
3.5
4.0
4.5
5.0
4.0
3.5
+85 C
–60
–70
–80
–90
–100
–110
–120
R
ON
–
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
+25 C
–40 C
–130
10k
100k
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – V
1M
10M
FREQUENCY – Hz
100M
Figure 3. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 5 V
Figure 6. Crosstalk vs. Frequency
REV. A
–5–
