a
FEATURES
1.8 V to 5.5 V Single Supply
4 (Max) On Resistance
0.75 (Typ) On Resistance Flatness
Automotive Temperature Range: –40°C to +125°C
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
6-Lead SOT-23 Package and 8-Lead SOIC Package
Fast Switching Times:
t
ON
= 12 ns
t
OFF
= 6 ns
Typical Power Consumption (< 0.01 W)
TTL/CMOS Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
CMOS 1.8 V to 5.5 V, 2.5
2:1 Mux/SPDT Switch in SOT-23
ADG719
FUNCTIONAL BLOCK DIAGRAM
ADG719
S2
D
S1
IN
SWITCHES SHOWN FOR A LOGIC “1” INPUT
PRODUCT HIGHLIGHTS
The ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance, and
low leakage currents.
The ADG719 can operate from a single-supply range of 1.8 V to
5.5 V, making it ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices.
Each switch of the ADG719 conducts equally well in both
directions when on. The ADG719 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719 is available in a 6-lead SOT-23 package and an
8-lead
µSOIC
package.
1. 1.8 V to 5.5 V Single-Supply Operation. The ADG719 offers
high performance, including low on resistance and fast switching
times, and is fully specified and guaranteed with 3 V and 5 V
supply rails.
2. Very Low R
ON
(4
Ω
Max at 5 V and 10
Ω
Max at 3 V).
At 1.8 V operation, R
ON
is typically 40
Ω
over the tempera-
ture range.
3. Automotive Temperature Range: –40°C to +125°C
4. On Resistance Flatness (R
FLAT(ON)
) (0.75
Ω
typ).
5. –3 dB Bandwidth > 200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. Fast t
ON
/t
OFF.
8. Tiny 6-lead SOT-23 and 8-lead
µSOIC
packages.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
ADG719–SPECIFICATIONS
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
2.5
4
On Resistance Match Between
Channels (∆R
ON
)
On Resistance Flatness (R
FLAT(ON)
) 0.75
+25 C
1
(V
DD
= 5 V
10%, GND = 0 V.)
B Version
–40 C to
+85 C
–40 C to
+125 C
0 V to V
DD
Unit
V
Ω
typ
Ω
max
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
S
= –10 mA;
Test Circuit 1
5
0.1
0.4
1.2
7
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
nA max
Test Circuit 2
V
S
= V
D
= 1 V or V
S
= V
D
= 4.5 V;
nA max
Test Circuit 3
0.4
1.5
LEAKAGE CURRENTS
Source Off Leakage I
S
(Off)
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
±
0.01
±
0.25
±
0.01
±
0.25
±
0.35
±
0.35
1
nA typ
5
2.4
0.8
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
0.005
±
0.1
7
12
3
6
V
IN
= V
INL
or V
INH
Break-Before-Make Time Delay, t
D
8
1
Off Isolation
–67
–87
–62
–82
200
7
27
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(Off)
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF,
V
S1
= V
S2
= 3 V; Test Circuit 5
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF; Test Circuit 8
V
DD
= 5.5 V
Digital Inputs = 0 V or 5.5 V
0.001
1.0
µA
typ
µA
max
NOTES
1
Temperature range is as follows: B Version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. B
ADG719
SPECIFICATIONS
1
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (∆R
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(Off)
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
±
0.01
±
0.25
±
0.01
±
0.25
(V
DD
= 3 V
10%, GND = 0 V.)
B Version
–40 C to
–40 C to
+85 C
+125 C
0 V to V
DD
6
7
10
0.1
0.4
2.5
12
+25 C
Unit
V
Ω
typ
Ω
max
Ω
typ
Ω
max
Ω
typ
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
S
= –10 mA;
Test Circuit 1
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V;
Test Circuit 2
V
S
= V
D
= 1 V or V
S
= V
D
= 3 V;
Test Circuit 3
0.4
±
0.35
±
0.35
1
5
2.0
0.8
0.005
±
0.1
10
15
4
8
V
IN
= V
INL
or V
INH
Break-Before-Make Time Delay, t
D
8
1
Off Isolation
–67
–87
–62
–82
200
7
27
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(Off)
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
= 2 V; Test Circuit 5
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF; Test Circuit 8
V
DD
= 3.3 V
Digital Inputs = 0 V or 3.3 V
0.001
1.0
µA
typ
µA
max
NOTES
1
Temperature range is as follows: B Version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. B
–3–
ADG719
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C, unless otherwise noted.)
TERMINOLOGY
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . –0.3 V to V
DD
+ 0.3 V or
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
µSOIC
Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
SOT-23 Package, Power Dissipation . . . . . . . . . . . . . . 282 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I. Truth Table
ADG719 IN
0
1
Switch S1
ON
OFF
Switch S2
OFF
ON
Most Positive Power Supply Potential
Ground (0 V) Reference
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input
Ohmic Resistance between D and S
On Resistance Match between Any Two Channels
i.e., R
ON
max – R
ON
min
R
FLAT(ON)
Flatness is defined as the difference between the
maximum and minimum value of on resistance,
as measured over the specified analog signal range.
I
S
(Off)
Source Leakage Current with the Switch Off
I
D
, I
S
(On)
Channel Leakage Current with the Switch On
V
D
(V
S
)
Analog Voltage on Terminals D and S
C
S
(Off)
Off Switch Source Capacitance
C
D
, C
S
(On) On Switch Capacitance
t
ON
Delay between Applying the Digital Control
Input and the Output Switching On
t
OFF
Delay between Applying the Digital Control
Input and the Output Switching Off
t
D
Off Time or On Time Measured between the
90% Points of Both Switches, when Switching
From One Address State to Another
Crosstalk
A Measure of Unwanted Signal That Is Coupled
through from One Channel to Another as a Result
of Parasitic Capacitance
Off Isolation A Measure of Unwanted Signal Coupling through
an Off Switch
Bandwidth
The Frequency at Which the Output is Attenuated
by –3 dBs
On Response The Frequency Response of the On Switch
Insertion Loss Loss due to On Resistance of Switch
V
DD
GND
S
D
IN
R
ON
∆R
ON
PIN CONFIGURATIONS
6-Lead SOT-23
(RT-6)
IN
1
V
DD 2
6
S2
8-Lead SOIC
(RM-8)
D
1
S1
2
8
S2
5
D
TOP VIEW
(Not to Scale)
4
S1
GND
3
ADG719
ADG719
7
NC
TOP VIEW
GND
3
(Not to Scale)
6
IN
V
DD 4
5
NC
NC = NO CONNECT
ORDERING GUIDE
Model
ADG719BRM
ADG719BRT
Temperature Range
–40°C to +125°C
–40°C to +125°C
Brand*
S5B
S5B
Package Description
µSOIC
(MicroSmall Outline IC) [MSOP]
SOT-23 (Plastic Surface Mount)
Package Option
RM-8
RT-6
*Branding
on these packages is limited to three characters due to space constraints.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG719 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. B
Typical Performance Characteristics– ADG719
6.0
5.5
5.0
4.5
4.0
3.5
R
ON
–
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – V
–0.05
0
10
20
I
S
(OFF)
30
40
50
60
TEMPERATURE – C
70
80
90
V
DD
= 5.0V
V
DD
= 3.0V
CURRENT – nA
0.15
V
DD
= 2.7V
T
A
= 25 C
0.10
V
DD
= 4.5V
V
DD
= 5V
V
D
= 4.5V/1V
V
S
= 1V/4.5V
I
D
, I
S
(ON)
0.05
0
TPC 1. On Resistance vs. V
D
(V
S
), Single Supplies
TPC 4. Leakage Currents vs. Temperature
6.0
5.5
5.0
4.5
4.0
–40 C
3.5
+85 C
+25 C
V
DD
= 3V
0.15
V
DD
= 3V
V
D
= 3V/1V
V
S
= 1V/3V
0.10
CURRENT – nA
R
ON
–
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
1.5
2.0
2.5
0.5
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – V
3.0
0.05
I
D
, I
S
(ON)
0
I
S
(OFF)
–0.05
0
10
20
30
40
50
60
TEMPERATURE – C
70
80
90
TPC 2. On Resistance vs. V
D
(V
S
) for Different
Temperatures, V
DD
= 3 V
TPC 5. Leakage Currents vs. Temperature
6.0
5.5
5.0
4.5
4.0
3.5
+85 C
V
DD
= 5V
10m
V
DD
= 5V
1m
100
I
SUPPLY
– A
3.0
3.5
4.0
4.5
5.0
R
ON
–
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
+25 C
–40 C
100n
10n
1n
1
10
100
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – V
1k
10k
100k
FREQUENCY – Hz
1M
10M
100M
TPC 3. On Resistance vs. V
D
(V
S
) for Different
Temperatures, V
DD
= 5 V
TPC 6. Supply Current vs. Input Switching Frequency
REV. B
–5–
PCB设计
