a
FEATURES
Low Insertion Loss and On Resistance: 2.2 Typical
On Resistance Flatness 0.5 Typical
Automotive Temperature Range
–40 C to +125 C
–3 dB Bandwidth = 240 MHz
Single 3 V/5 V Supply Operation
Rail-to-Rail Operation
Very Low Distortion: 0.5%
Low Quiescent Supply Current (1 nA Typical)
Fast Switching Times
t
ON
7 ns
t
OFF
4 ns
TTL/CMOS Compatible
APPLICATIONS
USB 1.1 Signal Switching Circuits
Cell Phones
PDAs
Battery-Powered Systems
Communications Systems
Data Acquisition Systems
Token Ring 4 Mbps/16 Mbps
Audio and Video Switching
Relay Replacement
CMOS 3 V/5 V,
Wide Bandwidth Quad 2:1 Mux
ADG774
FUNCTIONAL BLOCK DIAGRAM
ADG774
S1A
D1
S1B
S2A
D2
S2B
S3A
D3
S3B
S4A
D4
S4B
1 OF 2
DECODER
EN
IN
GENERAL DESCRIPTION
The ADG774 is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on resistance
variation is typically less than 0.5
Ω
with an input signal ranging
from 0 V to 5 V.
The bandwidth of the ADG774 is greater than 200 MHz; this,
coupled with low distortion (typically 0.5%), makes the part
suitable for switching USB 1.1 data signals and fast Ethernet
signals.
The on resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when
switching audio signals. Fast switching speed, coupled with high
signal bandwidth, also makes the parts suitable for video signal
switching. CMOS construction ensures ultralow power dissipa-
tion, making the parts ideally suited for portable and battery-
powered instruments.
The ADG774 operates from a single 3.3 V/5 V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.
These switches conduct equally well in both directions when ON,
and have an input signal range that extends to the supplies. In
the OFF condition, signal levels up to the supplies are blocked.
The ADG774 switches exhibit break-before-make switching
action.
PRODUCT HIGHLIGHTS
1. Wide –3 dB Bandwidth, 240 MHz.
2. Ultralow Power Dissipation.
3. Extended Signal Range.
The ADG774 is fabricated on a CMOS process giving an
increased signal range that fully extends to the supply rails.
4. Low Leakage Over Temperature.
5. Break-Before-Make Switching.
This prevents channel shorting when the switches are config-
ured as a multiplexer.
6. Crosstalk Typically –70 dB @ 30 MHz.
7. Off Isolation Typically –60 dB @ 10 MHz.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© 2004 Analog Devices, Inc. All rights reserved.
ADG774* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
DESIGN RESOURCES
•
ADG774 Material Declaration
•
PCN-PDN Information
•
Quality And Reliability
•
Symbols and Footprints
DOCUMENTATION
Application Notes
•
AN-1024: How to Calculate the Settling Time and
Sampling Rate of a Multiplexer
Data Sheet
•
ADG774: CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux
Data Sheet
DISCUSSIONS
View all ADG774 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
REFERENCE MATERIALS
Product Selection Guide
•
Switches and Multiplexers Product Selection Guide
Technical Articles
•
CMOS Switches Offer High Performance in Low Power,
Wideband Applications
•
Data-acquisition system uses fault protection
•
Enhanced Multiplexing for MEMS Optical Cross Connects
•
Temperature monitor measures three thermal zones
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not
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ADG774–SPECIFICATIONS
SINGLE SUPPLY
(V
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match between
Channels ( R
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
0.001
I
IN
I
O
NOTES
1
Temperature range: B Version, –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
DD
=5V
10%, GND = 0 V. All specifications T
MIN
to T
MAX
unless otherwise noted.)
B Version
1
–40 C to –40 C to
+85 C
+125 C
+25 C
Unit
Test Conditions/Comments
2.2
5
0.15
0.5
0.5
1
±
0.01
±
0.5
±
0.01
±
0.5
±
0.01
±
0.5
0 V to V
DD
V
Ω
typ
7
Ω
max
0.5
1
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
V
D
= 0 V to V
DD
, I
S
= –10 mA
V
D
= 0 V to V
DD
, I
S
= –10 mA
V
D
= 0 V to V
DD
, I
S
= –1 mA
±
1
±
1
±
1
±
1.5
±
1.5
±
1.5
2.0
0.8
V
D
= 4.5 V, V
S
= 1 V; V
D
= 1 V, V
S
= 4.5 V;
Test Circuit 2
V
D
= 4.5 V, V
S
= 1 V; V
D
= 1 V, V
S
= 4.5 V;
Test Circuit 2
V
D
= V
S
= 4.5 V; V
D
= V
S
= 1 V; Test Circuit 3
0.001
±
0.5
7
15
4
8
5
1
–65
–75
240
0.5
10
10
20
30
V
IN
= V
INL
or V
INH
20
9
R
L
= 100
Ω,
C
L
= 35 pF,
V
S
= +3 V; Test Circuit 4
R
L
= 100
Ω,
C
L
= 35 pF,
V
S
= +3 V; Test Circuit 4
R
L
= 100
Ω,
C
L
= 35 pF,
V
S1
= V
S2
= +5 V; Test Circuit 5
R
L
= 100
Ω,
f = 10 MHz; Test Circuit 7
R
L
= 100
Ω,
f = 10 MHz; Test Circuit 8
R
L
= 100
Ω;
Test Circuit 6
R
L
= 100
Ω
C
L
= 1 nF; Test Circuit 9
f = 1 kHz
f = 1 kHz
f = 1 MHz
V
DD
= +5.5 V
Digital Inputs = 0 V or V
DD
V
IN
= +5 V
V
S
/V
D
= 0 V
1
1
100
1
1
µA
max
µA
typ
µA
typ
mA max
–2–
REV. C
ADG774
SINGLE SUPPLY
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match between
Channels ( R
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
0.001
I
IN
I
O
NOTES
1
Temperature range: B Version, –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 3 V
10%, GND = 0 V. All specifications T
MIN
to T
MAX
unless otherwise noted.)
B Version
1
–40 C to –40 C to
+85 C
+125 C
+25 C
Unit
Test Conditions/Comments
4
8
0.15
0.5
2
4
±
0.01
±
0.5
±
0.01
±
0.5
±
0.01
±
0.5
0 V to V
DD
V
Ω
typ
9
Ω
max
0.5
4
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
V
D
= 0 V to V
DD
, I
S
= –10 mA
V
D
= 0 V to V
DD
, I
S
= –10 mA
V
D
= 0 V to V
DD
, I
S
= –10 mA
±
1
±
1
±
1
±
1.5
±
1.5
±
1.5
2.0
0.8
V
D
= 3 V, V
S
= 1 V; V
D
= 1 V, V
S
= 3 V;
Test Circuit 2
V
D
= 3 V, V
S
= 1 V; V
D
= 1 V, V
S
= 3 V;
Test Circuit 2
V
D
= V
S
= 3 V; V
D
= V
S
= 1 V; Test Circuit 3
0.001
±
0.5
8
16
5
10
5
1
–65
–75
240
2
3
10
20
30
V
IN
= V
INL
or V
INH
21
11
R
L
= 100
Ω,
C
L
= 35 pF,
V
S
= +1.5 V; Test Circuit 4
R
L
= 100
Ω,
C
L
= 35 pF,
V
S
= +1.5 V; Test Circuit 4
R
L
= 100
Ω,
C
L
= 35 pF,
V
S1
= V
S2
= 3 V; Test Circuit 5
R
L
= 50
Ω,
f = 10 MHz; Test Circuit 7
R
L
= 50
Ω,
f = 10 MHz; Test Circuit 8
R
L
= 50
Ω;
Test Circuit 6
R
L
= 50
Ω
C
L
= 1 nF; Test Circuit 9
f = 1 kHz
f = 1 kHz
f = 1 MHz
V
DD
= +3.3 V
Digital Inputs = 0 V or V
DD
V
IN
= +3 V
V
S
/V
D
= 0 V
1
1
100
1
1
µA
max
µA
typ
µA
typ
mA max
Table I. Truth Table
EN
1
0
0
REV. C
IN
X
0
1
D1
Hi-Z
S1A
S1B
D2
Hi-Z
S2A
S2B
D3
Hi-Z
S3A
S3B
–3–
D4
Hi-Z
S4A
S4B
Function
DISABLE
IN = 0
IN = 1
ADG774
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C unless otherwise noted.)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs
2
. . . . . . . . . . –0.3 V to V
DD
+ 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 600 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 100°C/W
QSOP Package, Power Dissipation . . . . . . . . . . . . . . . 566 mW
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . 149.97°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C
I R Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE
Model
ADG774BR
ADG774BR-REEL
ADG774BR-REEL7
ADG774BRZ*
ADG774BRZ-REEL*
ADG774BRZ-REEL7*
ADG774BRQ
ADG774BRQ-REEL
ADG774BRQ-REEL7
ADG774BRQZ*
ADG774BRQZ-REEL*
ADG774BRQZ-REEL7*
*Z
= Pb-free part.
Temperature Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
Package Descriptions
Standard Small Outline Package (SOIC)
Standard Small Outline Package (SOIC)
Standard Small Outline Package (SOIC)
Standard Small Outline Package (SOIC)
Standard Small Outline Package (SOIC)
Standard Small Outline Package (SOIC)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Shrink Small Outline Package (QSOP)
Package Options
R-16
R-16
R-16
R-16
R-16
R-16
RQ-16
RQ-16
RQ-16
RQ-16
RQ-16
RQ-16
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG774 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. C
