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ADG819BRT-R2

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN, Multiplexer or Switch

器件类别:模拟混合信号IC    信号电路   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
ADI(亚德诺半导体)
零件包装代码
SOT-23
包装说明
PLASTIC, SOT-23, 6 PIN
针数
6
Reach Compliance Code
not_compliant
ECCN代码
EAR99
模拟集成电路 - 其他类型
SPDT
JESD-30 代码
R-PDSO-G6
JESD-609代码
e0
长度
2.9 mm
信道数量
1
功能数量
1
端子数量
6
标称断态隔离度
71 dB
通态电阻匹配规范
0.06 Ω
最大通态电阻 (Ron)
1.4 Ω
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
LSSOP
封装等效代码
TSOP6,.11,37
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)
220
电源
3/5 V
认证状态
Not Qualified
座面最大高度
1.45 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
最长断开时间
16 ns
最长接通时间
60 ns
切换
BREAK-BEFORE-MAKE
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.95 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
1.65 mm
文档预览
Data Sheet
FEATURES
Low on resistance: 0.8 Ω maximum at 125°C
0.25 Ω maximum on resistance flatness
1.8 V to 5.5 V single supply
200 mA current carrying capability
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
6-lead SOT-23, 8-lead MSOP, and 6-ball WLCSP packages
Fast switching times
Typical power consumption (<0.01 µW)
TTL-/CMOS-compatible inputs
Pin compatible with the
ADG719
0.5 Ω, CMOS,
1.8 V to 5.5 V, 2:1 Mux/SPDT Switch
ADG819
FUNCTIONAL BLOCK DIAGRAM
ADG819
S2
D
S1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
APPLICATIONS
Power routing
Battery-powered systems
Communication systems
Data acquisition systems
Cellular phones
Modems
PCMCIA cards
Hard drives
Relay replacement
GENERAL DESCRIPTION
The
ADG819
is a monolithic, CMOS, single-pole, double-throw
(SPDT) switch. This switch is designed on a submicron process
that provides low power dissipation yet gives high switching
speed, low on resistance, and low leakage currents.
Low power consumption and an operating supply range of
1.8 V to 5.5 V make the
ADG819
ideal for battery-powered,
portable instruments.
Each switch of the
ADG819
conducts equally well in both
directions when on. The
ADG819
exhibits break-before-make
switching action, thus preventing momentary shorting when
switching channels.
The
ADG819
is available in a 6-lead SOT-23 package, an 8-lead
MSOP package, and in a 6-ball WLCSP package. This chip
occupies only a 1.14 mm × 2.18 mm area, making it the ideal
candidate for space-constrained applications.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
Very low on resistance, 0.5 Ω typical.
1.8 V to 5.5 V single-supply operation.
High current carrying capability.
Tiny 6-lead SOT-23, 8-lead MSOP, and 6-ball, 1.14 mm ×
2.18 mm WLCSP packages.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
www.analog.com
Tel: 781.329.4700
Fax: 781.461.3113 ©2002–2012 Analog Devices, Inc. All rights reserved.
02801-001
ADG819
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings ............................................................ 5
Data Sheet
ESD Caution...................................................................................5
Pin Configurations and Function Descriptions ............................6
Typical Performance Characteristics ..............................................7
Test Circuits........................................................................................9
Terminology .................................................................................... 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 13
REVISION HISTORY
5/12—Rev. 0 to Rev. A
Updated Format .................................................................. Universal
Deleted ADG820 ................................................................ Universal
Changes to General Description .................................................... 1
Changes to Table 1 ............................................................................ 3
Changes to Table 2 ............................................................................ 4
Change to WLCSP θ
JA
Thermal Impedance Parameter,
Table 3 ................................................................................................ 5
Added Table 5 and Table 6; Renumbered Sequentially ............... 6
Deleted Test Circuit 6; Renumbered Sequentially ....................... 8
Changes to Figure 11 to Figure 14.................................................. 8
Changes to Terminology Section.................................................. 11
Updated Outline Dimensions ....................................................... 12
Changes to Ordering Guide .......................................................... 13
5/02—Revision 0: Initial Version
Rev. A | Page 2 of 16
Data Sheet
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, R
ON 1
On Resistance Match Between
Channels, ΔR
ON1
On Resistance Flatness, R
1
FLAT(ON)
ADG819
25°C
−40°C to
+85°C
–40°C to
+125°C
0 V to V
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
μA typ
μA max
Test Conditions/Comments
0.5
0.6
0.06
0.08
0.1
0.17
±0.01
±0.25
±0.01
±0.25
V
S
= 0 V to V
DD
, I
S
= 100 mA; see Figure 16
V
S
= 0 V to V
DD
, I
S
= 100 mA
0.7
0.8
0.1
0.2
0.12
0.25
V
S
= 0 V to V
DD
, I
S
= 100 mA
V
DD
= 5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V; see Figure 17
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V; see Figure 18
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off)
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay,
t
BBM
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth, –3 dB
C
S
(Off)
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
1
2
±3
±3
±10
±25
2.0
0.8
0.005
±0.1
5
35
45
10
16
5
V
IN
= V
INL
or V
INH
R
L
= 50 Ω, C
L
= 35 pF, V
S
= 3 V; see Figure 19
R
L
= 50 Ω, C
L
= 35 pF, V
S
= 3 V; see Figure 19
R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3 V; see Figure 20
50
18
55
21
1
20
–71
–72
17
80
300
0.001
1.0
On resistance parameters tested with I
S
= 10 mA.
Guaranteed by design; not subject to production test.
V
S
= 2.5 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 21
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 22
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 24
R
L
= 50 Ω, C
L
= 5 pF; see Figure 23
f = 1 MHz
f = 1 MHz
V
DD
= 5.5 V, digital inputs = 0 V or 5.5 V
2.0
Rev. A | Page 3 of 16
ADG819
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, R
ON1
On Resistance Match Between
Channels, ΔR
ON1
On Resistance Flatness, R
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off)
1
FLAT(ON)
Data Sheet
25°C
–40°C to
+85°C
–40°C to
+125°C
0 V to V
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
μA typ
μA max
Test Conditions/Comments
0.7
1.4
0.06
V
S
= 0 V to V
DD
, I
S
= 100 mA; see Figure 16
V
S
= 0 V to V
DD
, I
S
= 100 mA
1.5
1.6
0.13
0.25
±0.01
±0.25
±0.01
±0.25
0.13
V
S
= 0 V to V
DD
, I
S
= 100 mA
V
DD
= 3.6 V
V
S
= 3.3 V/1 V, V
D
= 1 V/3.3 V; see Figure 17
V
S
= V
D
= 1 V, or V
S
= V
D
= 3.3 V; see Figure 18
±3
±3
±10
±25
2.0
0.8
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay,
t
BBM
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth, –3 dB
C
S
(Off)
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
1
2
0.005
±0.1
5
40
60
10
16
40
V
IN
= V
INL
or V
INH
R
L
= 50 Ω, C
L
= 35 pF, V
S
= 1.5 V; see Figure 19
R
L
= 50 Ω, C
L
= 35 pF, V
S
= 1.5 V; see Figure 19
R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 1.5 V; see Figure 20
65
18
70
21
1
10
−71
−72
17
80
300
0.001
1.0
On resistance parameters tested with I
S
= 10 mA.
Guaranteed by design; not subject to production test.
V
S
= 1.5 V, R
S
= 0 Ω,C
L
= 1 nF; see Figure 21
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 22
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 24
R
L
= 50 Ω, C
L
= 5 pF; see Figure 23
f = 1 MHz
f = 1 MHz
V
DD
= 3.6 V, digital Inputs = 0 V or 3.6 V
2.0
Rev. A | Page 4 of 16
Data Sheet
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted
Table 3.
Parameter
V
DD
to GND
Analog Inputs
1
Digital Inputs
1
Peak Current, Sx or D
Continuous Current, Sx or D
Operating Temperature Range
Industrial
Automotive
Storage Temperature Range
Junction Temperature
MSOP
θ
JA
Thermal Impedance
θ
JC
Thermal Impedance
SOT-23 (4-Layer Board)
θ
JA
Thermal Impedance
WLCSP (4-Layer Board)
θ
JA
Thermal Impedance
Lead Temperature, Soldering
(10 sec)
IR Reflow, Peak Temperature
(<20 sec)
1
ADG819
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating can be applied at any
one time.
Table 4. Truth Table for the
ADG819
IN
0
1
Switch S1
On
Off
Switch S2
Off
On
Rating
−0.3 V to +7 V
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
400 mA (pulsed at 1 ms, 10%
duty cycle maximum)
200 mA
−40°C to +85°C
−40°C to +125°C
−65°C to +150°C
150°C
206°C/W
44°C/W
119°C/W
80°C/W
300°C
235°C
ESD CAUTION
Overvoltages at IN, Sx, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
Rev. A | Page 5 of 16
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参数对比
与ADG819BRT-R2相近的元器件有:ADG819BCB-REEL7、ADG819BCB-REEL、ADG819BCB-R2。描述及对比如下:
型号 ADG819BRT-R2 ADG819BCB-REEL7 ADG819BCB-REEL ADG819BCB-R2
描述 IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6, PLASTIC, SOT-23, 6 PIN, Multiplexer or Switch IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, BGA6, 1.14 X 2.18 MM, MICRO, CSP-6, Multiplexer or Switch IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, BGA6, 1.14 X 2.18 MM, MICRO, CSP-6, Multiplexer or Switch IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, BGA6, 1.14 X 2.18 MM, MICRO, CSP-6, Multiplexer or Switch
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体)
零件包装代码 SOT-23 BGA BGA BGA
包装说明 PLASTIC, SOT-23, 6 PIN VFBGA, BGA6,2X3,20 VFBGA, BGA6,2X3,20 VFBGA, BGA6,2X3,20
针数 6 6 6 6
Reach Compliance Code not_compliant unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
模拟集成电路 - 其他类型 SPDT SPDT SPDT SPDT
JESD-30 代码 R-PDSO-G6 R-XBGA-B6 R-XBGA-B6 R-XBGA-B6
JESD-609代码 e0 e0 e0 e0
长度 2.9 mm 2.18 mm 2.18 mm 2.18 mm
信道数量 1 1 1 1
功能数量 1 1 1 1
端子数量 6 6 6 6
标称断态隔离度 71 dB 71 dB 71 dB 71 dB
通态电阻匹配规范 0.06 Ω 0.06 Ω 0.06 Ω 0.06 Ω
最大通态电阻 (Ron) 1.4 Ω 1.4 Ω 1.4 Ω 1.4 Ω
最高工作温度 125 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 LSSOP VFBGA VFBGA VFBGA
封装等效代码 TSOP6,.11,37 BGA6,2X3,20 BGA6,2X3,20 BGA6,2X3,20
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 220 240 240 220
电源 3/5 V 3/5 V 3/5 V 3/5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.45 mm 0.67 mm 0.67 mm 0.67 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V
表面贴装 YES YES YES YES
最长断开时间 16 ns 16 ns 16 ns 16 ns
最长接通时间 60 ns 60 ns 60 ns 60 ns
切换 BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE
技术 CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn63Pb37)
端子形式 GULL WING BALL BALL BALL
端子节距 0.95 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 DUAL BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 30 30
宽度 1.65 mm 1.14 mm 1.14 mm 1.14 mm
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