Data Sheet
FEATURES
0.5 Ω typical on resistance
0.8 Ω maximum on resistance at 125°C
1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast-switching times <20 ns
Typical power consumption (<0.1 µW)
0.5 Ω CMOS, 1.65 V TO 3.6 V,
Dual SPDT/2:1 MUX
ADG836
FUNCTIONAL BLOCK DIAGRAM
ADG836
S1A
D1
S1B
IN1
IN2
S2A
D2
S2B
04308-001
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 1.
GENERAL DESCRIPTION
The
ADG836
is a low voltage complementary metal-oxide
semiconductor (CMOS) device containing two independently
selectable single-pole, double-throw (SPDT) switches. This
device offers an ultralow on resistance of less than 0.8 Ω over
the full temperature range. The
ADG836
is fully specified for
3.3 V, 2.5 V, and 1.8 V supply operation.
Each switch conducts equally well in both directions when on,
and has an input signal range that extends to the supplies. The
ADG836
exhibits break-before-make switching action.
The
ADG836
is available in a 10-lead MSOP and in a 3 mm ×
3 mm 12-lead LFCSP.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
5.
6.
<0.8 Ω over full temperature range of –40°C to +125°C.
Single 1.65 V to 3.6 V operation.
Compatible with 1.8 V CMOS logic.
High current handling capability (300 mA continuous
current at 3.3 V).
Low total harmonic distortion plus noise (THD + N)
(0.02% typical).
3 mm × 3 mm LFCSP and 10-lead MSOP.
Rev. B
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ADG836* PRODUCT PAGE QUICK LINKS
Last Content Update: 06/30/2017
COMPARABLE PARTS
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DESIGN RESOURCES
•
ADG836 Material Declaration
•
PCN-PDN Information
•
Quality And Reliability
•
Symbols and Footprints
EVALUATION KITS
•
Evaluation Board for 10-Lead MSOP Devices in the
Switches and Multiplexers Portfolio
DOCUMENTATION
Data Sheet
• ADG836: 0.5 Ω CMOS, 1.65 V TO 3.6 V, Dual SPDT/2:1 MUX
Data Sheet
User Guides
•
UG-1037: Evaluation Board for 10-Lead MSOP Devices in
the Switches and Multiplexers Portfolio
DISCUSSIONS
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SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
REFERENCE MATERIALS
Product Selection Guide
•
Switches and Multiplexers Product Selection Guide
Technical Articles
•
CMOS Switches Offer High Performance in Low Power,
Wideband Applications
•
Data-acquisition system uses fault protection
•
Enhanced Multiplexing for MEMS Optical Cross Connects
•
Temperature monitor measures three thermal zones
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ADG836
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 6
Data Sheet
ESD Caution...................................................................................6
Pin Configurations and Function Descriptions ............................7
Typical Performance Characteristics ..............................................8
Test Circuits ..................................................................................... 11
Terminology .................................................................................... 13
Outline Dimensions ....................................................................... 14
Ordering Guide .......................................................................... 14
REVISION HISTORY
6/2016—Rev. A to Rev. B
Changed CP-12-1 to CP-12-4 ...................................... Throughout
Changes to Figure 3 and Table 6 ..................................................... 7
Added Terminology Section ......................................................... 13
Updated Outline Dimensions ....................................................... 14
Changes to Ordering Guide .......................................................... 14
4/2005—Rev. 0 to Rev. A
Updated Format .................................................................. Universal
Changes to Table 1 ............................................................................ 3
Changes to Table 2 ............................................................................ 4
Changes to Table 3 ............................................................................ 5
Changes to Ordering Guide .......................................................... 13
8/2003—Revision 0: Initial Version
Rev. B | Page 2 of 16
Data Sheet
SPECIFICATIONS
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. The temperature range for the Y version is −40°C to +125°C.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
+25°C
−40°C to +85°C
−40°C to +125°C
0 V to V
DD
0.5
0.65
0.04
0.1
0.15
LEAKAGE CURRENTS
Source Off Leakage I
S
(OFF)
Channel On Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
1
t
ON
t
OFF
Break-Before-Make Time Delay (t
BBM
)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
±0.2
±0.2
2
0.8
0.005
±0.1
4
21
26
4
7
17
40
−67
−90
−67
Total Harmonic Distortion Plus Noise
(THD + N)
Insertion Loss
−3 dB Bandwidth
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
0.02
−0.05
57
25
75
0.003
1
1
ADG836
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
DD
= 2.7 V, V
S
= 0 V to V
DD
, I
S
= 100 mA;
Figure 19
V
DD
= 2.7 V, V
S
= 0.65 V, I
S
= 100 mA
V
DD
= 2.7 V, V
S
= 0 V to V
DD
I
S
= 100 mA
V
DD
= 3.6 V
V
S
= 0.6 V/3.3 V, V
D
= 3.3 V/0.6 V;
Figure 20
V
S
= V
D
= 0.6 V or 3.3 V; Figure 21
0.75
0.075
0.8
0.08
0.16
On-Resistance Match Between
Channels (∆R
ON
)
On-Resistance Flatness (R
FLAT (ON)
)
V
IN
= V
INL
or V
INH
28
8
29
9
5
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V/0 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S1
= V
S2
= 1.5 V; Figure 23
V
S
= 1.5 V, R
S
= 0 Ω, C
L
= 1 nF; Figure 24
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
Figure 25
S1A to S2A/S1B to S2B, R
L
= 50 Ω,
C
L
= 5 pF, f = 100 kHz; Figure 28
S1A to S1B/S2A to S2B, R
L
= 50 Ω,
C
L
= 5 pF, f = 100 kHz; Figure 27
R
L
= 32 Ω, f = 20 Hz to 20 kHz,
V
S
= 2 V p-p
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
V
DD
= 3.6 V
Digital inputs = 0 V or 3.6 V
4
Guaranteed by design, not subject to production test.
Rev. B | Page 3 of 16
ADG836
V
DD
= 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted. The temperature range for the Y version is −40°C to +125°C.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On-Resistance Match Between
Channels (∆R
ON
)
On-Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(OFF)
Channel On Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
1
t
ON
t
OFF
Break-before-Make Time Delay (t
BBM
)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
+25°C −40°C to +85°C −40°C to +125°C Unit
0 V to V
DD
0.65
0.72
0.04
0.16
0.23
±0.2
±0.2
1.7
0.7
0.005
±0.1
4
23
29
5
7
17
30
−67
−90
−67
Total Harmonic Distortion Plus Noise
(THD + N)
Insertion Loss
−3 dB Bandwidth
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
0.022
−0.06
57
25
75
0.003
1
1
Data Sheet
Test Conditions/Comments
0.8
0.08
0.88
0.085
0.24
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
%
V
DD
= 2.3 V, V
S
= 0 V to V
DD,
I
S
= 100 mA; Figure 19
V
DD
= 2.3 V, V
S
= 0.7 V, I
S
= 100 mA
V
DD
= 2.3 V, V
S
= 0 V to V
DD,
I
S
= 100 mA
V
DD
= 2.7 V
V
S
= 0.6 V/2.4 V, V
D
= 2.4 V/0.6 V; Figure 20
V
S
= V
D
= 0.6 V or 2.4 V; Figure 21
V
IN
= V
INL
or V
INH
30
8
31
9
5
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V/0 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S1
= V
S2
= 1.5 V; Figure 23
V
S
= 1.25 V, R
S
= 0 Ω, C
L
= 1 nF; Figure 24
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; Figure 25
S1A to S2A/S1B to S2B, R
L
= 50
Ω,
C
L
= 5 pF,
f = 100 kHz; Figure 28
S1A to S1B/S2A to S2B, R
L
= 50 Ω, C
L
= 5 pF,
f = 100 kHz; Figure 27
R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 1.5 V p-p
4
dB typ
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
MHz typ R
L
= 50 Ω, C
L
= 5 pF; Figure 26
pF typ
pF typ
V
DD
= 2.7 V
µA typ
Digital inputs = 0 V or 2.7 V
µA max
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 16