Changes to Figure 1..........................................................................1
Changes to Table 1............................................................................3
Changes to Ordering Guide ..........................................................12
10/04—Rev. 0 to Rev. A.
Changes to Features ......................................................................... 1
Changes to Product Highlights ...................................................... 1
Changes to Specifications ................................................................ 2
Changes to Ordering Guide ............................................................ 3
Change to ADG9xx Evaluation Board Section............................. 9
Changes to Ordering Guide .......................................................... 10
8/03—Revision 0: Initial Version
Rev. B | Page 2 of 16
ADG901/ADG902
SPECIFICATIONS
V
DD
= 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all specifications T
MIN
to T
MAX
, unless otherwise specified.
1
Table 1.
Parameter
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
3
−3 dB Frequency
4
Input Power
4
Insertion Loss
Symbol
Conditions
Min
DC
0 V dc bias
0.5 V dc bias
DC to 100 MHz; V
DD
= 2.5 V ± 10%
500 MHz; V
DD
= 2.5 V ± 10%
1000 MHz; V
DD
= 2.5 V ± 10%
100 MHz
500 MHz
1000 MHz
100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
50% CTRL to 90% RF
50% CTRL to 10% RF
10% to 90% RF
90% to 10% RF
1000 MHz
900 MHz/901 MHz, 4 dBm
B Version
Typ
2
Max
2.5
4.5
7
16
0.7
0.8
1.25
Unit
GHz
GHz
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
ns
ns
dBm
dBm
mV p-p
V
V
V
V
μA
pF
pF
2.75
1
V
μA
S
21
, S
12
Isolation—RF1 to RF2
CP Package
Isolation—RF1 to RF2
RM Package
Return Loss (On Channel)
4
S
21
, S
12
S
21
, S
12
S
11
, S
22
Return Loss (Off Channel)
4
S
11
, S
22
60
43
34
51
37.5
31
20
23
25
18
17
15
On Switching Time
4
Off Switching Time
4
Rise Time
4
Fall Time
4
1 dB Compression
4
Third-Order Intermodulation Intercept
Video Feedthrough
5
DC ELECTRICAL CHARACTERISTICS
Input High Voltage
Input Low Voltage
t
ON
t
OFF
t
RISE
t
FALL
P
−1 dB
IP3
B
28.5
0.4
0.5
0.8
61
45
40
60
47
37
28
29
28
23
21
19
3.6
5.8
3.1
6.0
17
36
2.5
6
9.5
5.5
8.5
V
INH
V
INH
V
INL
V
INL
I
I
C
RF
on
C
CTRL
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
0 ≤ V
IN
≤ 2.75 V
f = 1 MHz
f = 1 MHz
1.7
0.65 V
DD
0.7
0.35
V
DD
±1
Input Leakage Current
CAPACITANCE
4
RF1/RF2, RF Port On Capacitance
CTRL Input Capacitance
POWER REQUIREMENTS
V
DD
Quiescent Power Supply Current
1
2
±0.1
1.2
2.1
1.65
I
DD
Digital inputs = 0 V or V
DD
0.1
Temperature range for B version: −40°C to +85°C.
Typical values are at V
DD
= 2.5 V and 25°C, unless otherwise specified.
3
Point at which insertion loss degrades by 1 dB.
4
Guaranteed by design, not subject to production test.
5
The dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test setup, measured with 1 ns
rise time pulses and 500 MHz bandwidth.
Rev. B | Page 3 of 16
ADG901/ADG902
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise specified.
Table 2.
Parameter
V
DD
to GND
Inputs to GND
Continuous Current
Input Power
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
MSOP Package
θ
JA
Thermal Impedance
LFCSP Package
θ
JA
Thermal Impedance (2-Layer
board)
θ
JA
Thermal Impedance (4-Layer
board)
Lead Temperature, Soldering (10 sec)
IR Reflow, Peak Temperature (<20 sec)
ESD
1
Rating
−0.5 V to +4 V
−0.5 V to V
DD
+ 0.3
V
1
30 mA
18 dBm
−40°C
to +85°C
−65°C
to +150°C
150°C
206°C/W
84°C/W
48°C/W
300°C
235°C
1 kV
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
RF1/RF2 off port inputs to ground: −0.5 V to V
DD
– 0.5 V
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. B | Page 4 of 16
ADG901/ADG902
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
V
DD 1
CTRL
2
GND
3
8
RF2
GND
ADG901/
ADG902
7
Figure 4. 8-Lead MSOP (RM-8) and
8-Lead 3 mm × 3 mm LFCSP (CP-8 – Exposed pad tied to substrate, GND
Table 3. Pin Function Descriptions
Pin No.
1
2
Mnemonic
V
DD
CTRL
Description
Power Supply Input. These parts can be operated from 1.65 V to 2.75 V; V
DD
should be decoupled to GND.
CMOS or LVTTL Logic Level. CTRL input should not exceed V
DD.
0
→
RF1 Isolated from RF2.
1
→
RF1 to RF2.
Ground Reference Point for All Circuitry on the Part.
提供丰富的高性能管理产品组合,适合任何可充电电池化学应用,包括锂离子、铅酸和基于镍的电池。这些电池充电器 IC 采用线性或拓扑,可实现完全自主操作。我们的电池充电器 IC 提供许多标准电池管理和安全特性,包括片内电池预调节、限流、温控充电、和保护、遥测(通过 SMBus 或 )并支持单个器件的高压和多化学电池。 ...[详细]
Optimizing Power Consumption in Vision Systems with Wake on Motion 利用运动唤醒功能优化视觉系统的功耗 您有没有想过,智能门铃如何检测到有人走到您家门口,又如何通过摄像头识别重要动作?答案就是图像传感器。 这些微型传感器内置在智能门铃中,始终以全状态(全分辨率、30fps)运行,其中记录的图像可以清楚地显示是什么人或什么...[详细]