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ADG936BCPZ-RL

Wideband 4 GH z, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT

器件类别:模拟混合信号IC    信号电路   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

器件标准:

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器件参数
参数名称
属性值
Brand Name
Analog Devices Inc
是否无铅
含铅
是否Rohs认证
符合
厂商名称
ADI(亚德诺半导体)
零件包装代码
QFN
包装说明
HVQCCN,
针数
20
制造商包装代码
CP-20-6
Reach Compliance Code
compliant
ECCN代码
EAR99
模拟集成电路 - 其他类型
SPDT
JESD-30 代码
S-XQCC-N20
JESD-609代码
e3
长度
4 mm
湿度敏感等级
3
信道数量
1
功能数量
2
端子数量
20
标称断态隔离度
36 dB
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
UNSPECIFIED
封装代码
HVQCCN
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1 mm
最大供电电压 (Vsup)
2.75 V
最小供电电压 (Vsup)
1.65 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
最长断开时间
13 ns
最长接通时间
14 ns
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
40
宽度
4 mm
文档预览
Wideband 4 GHz, 36 dB Isolation at 1 GHz,
CMOS, 1.65 V to 2.75 V, Dual SPDT
ADG936/ADG936-R
FEATURES
Wideband switch: −3 dB @ 4 GHz
ADG936 absorptive dual SPDT
ADG936-R reflective dual SPDT
High off isolation (36 dB @ 1 GHz)
Low insertion loss (0.9 dB dc to 1 GHz)
Single 1.65 V to 2.75 V power supply
CMOS/LVTTL control logic
20-lead TSSOP and 4 mm × 4 mm LFCSP packages
Low power consumption (1 μA maximum)
FUNCTIONAL BLOCK DIAGRAMS
RF1A
RFCA
50Ω
RF2A
INA
INA
RF2A
RFCA
RF1A
ADG936
50Ω
RF1B
ADG936-R
RF1B
RFCB
RFCB
APPLICATIONS
Wireless communications
General-purpose RF switching
Dual-band applications
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
INB
50Ω
RF2B
INB
50Ω
04503-001
04503-012
RF2B
Figure 1.
Figure 2.
GENERAL DESCRIPTION
The ADG936/ADG936-R are wideband analog switches that
comprise two independently selectable SPDT switches using a
CMOS process to provide high isolation and low insertion loss
to 1 GHz. The ADG936 is an absorptive/matched dual SPDT
with 50 Ω terminated shunt legs; the ADG936-R is a reflective
dual SPDT. These devices are designed such that the isolation is
high over the dc to 1 GHz frequency range. They have on-board
CMOS control logic, eliminating the need for external controlling
circuitry. The control inputs are both CMOS and LVTTL
–10
–20
–30
V
DD
= 2.5V
T
A
= 25°C
compatible. The low power consumption of these CMOS
devices makes them ideally suited for wireless applications and
general-purpose high frequency switching.
PRODUCT HIGHLIGHTS
1.
2.
3.
–36 dB off isolation @ 1 GHz.
0.9 dB insertion loss @ 1 GHz.
20-lead TSSOP and 4 mm × 4 mm LFCSP packages.
–0.3
–0.4
–0.5
–0.6
–0.7
–0.8
–0.9
–1.0
–1.1
–1.2
–1.3
–1.4
–1.5
–1.6
–1.7
–1.8
–1.9
–2.0
–2.1
–2.2
–2.3
–2.4
–2.5
–2.6
–2.7
–2.8
–2.9 T
A
= 25°C
–3.0
10k
100k
–40
–50
–60
–70
–80
10k
S12
INSERTION LOSS (dB)
OFF ISOLATION (dB)
V
DD
= 2.5V
S21
04503-027
100k
1M
10M
100M
FREQUENCY (Hz)
1G
10G
1M
10M
100M
FREQUENCY (Hz)
1G
10G
Figure 3. Off Isolation vs. Frequency
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Figure 4. Insertion Loss vs. Frequency
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.
04503-015
ADG936/ADG936-R
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagrams............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configurations and Function Descriptions ........................... 5
Terminology ...................................................................................... 6
Typical Performance Characteristics ..............................................7
Test Circuits........................................................................................9
Applications..................................................................................... 11
Absorptive vs. Reflective ........................................................... 11
Filter Selection ............................................................................ 11
Tx/Rx Switching ......................................................................... 11
Antenna Diversity Switch.......................................................... 11
Evaluation Board ............................................................................ 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 14
REVISION HISTORY
8/05—Rev. 0 to Rev. A
Changes to Table 1............................................................................ 3
Changes to Figure 6.......................................................................... 5
Changes to Ordering Guide .......................................................... 14
7/04—Revision 0: Initial Version
Rev. A | Page 2 of 16
ADG936/ADG936-R
SPECIFICATIONS
V
DD
= 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all specifications T
MIN
to T
MAX
, unless otherwise noted.
1
Table 1.
Parameter
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
3
3 dB Frequency
4
Input Power
4
Insertion Loss
Symbol
Conditions
Min
DC
0 V dc bias
0.5 V dc bias
DC to 100 MHz; V
DD
= 2.5 V ± 10%
500 MHz; V
DD
= 2.5 V ± 10%
1000 MHz; V
DD
= 2.5 V ± 10%
100 MHz
500 MHz
1000 MHz
100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
50% CTRL to 90% RF
50% CTRL to 10% RF
10% to 90% RF
90% to 10% RF
1000 MHz
900 MHz/901 MHz, 4 dBm
B Version
Typ
2
Max
2
4
7
16
0.5
0.8
1.25
Unit
GHz
GHz
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
ns
ns
dBm
dBm
mV p-p
V
V
V
V
μA
pF
pF
2.75
1
V
μA
S
21
, S
12
Isolation—RFCx to RF1x/RF2x
S
21
, S
12
Crosstalk—RF1x to RF2x
S
21
, S
12
Return Loss (On Channel)
4
S
11
, S
22
Return Loss (Off Channel)
4
S
11
, S
22
52
40
31
53
42
34
20
19
16
18
17
16
On Switching Time
4
Off Switching Time
4
Rise Time
4
Fall Time
4
1 dB Compression
4
Third-Order Intermodulation Intercept
Video Feedthrough
5
DC ELECTRICAL CHARACTERISTICS
Input High Voltage
Input Low Voltage
Input Leakage Current
CAPACITANCE
4
RF Port On Capacitance
Digital Input Capacitance
POWER REQUIREMENTS
V
DD
Quiescent Power Supply Current
1
2
t
ON
t
OFF
t
RISE
t
FALL
P
–1 dB
IP
3
B
27.5
0.4
0.6
0.9
60
47
36
69
45
37
25
23
24
24
23
21
11
10
6.1
6
16
32
3
14
13
8
8
V
INH
V
INH
V
INL
V
INL
I
I
C
RF
ON
C
DIG
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
0 ≤ V
IN
≤ 2.75 V
f = 1 MHz
f = 1 MHz
1.7
0.65 V
CC
0.7
0.35 V
CC
±1
± 0.1
2.5
2
1.65
I
DD
Digital inputs = 0 V or V
DD
0.1
Temperature range of B Version: −40°C to +85°C.
Typical values are at V
DD
= 2.5 V and 25°C, unless otherwise noted.
3
Operating frequency is the point at which insertion loss degrades by 1 dB.
4
Guaranteed by design, not subject to production test.
5
Video feedthrough is the dc transience at the output of any port of the switch when the control voltage is switched from high to low or from low to high in a 50 Ω test
setup, measured with 1 ns rise time pulses and a 500 MHz bandwidth.
Rev. A | Page 3 of 16
ADG936/ADG936-R
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter
V
DD
to GND
Inputs to GND
Continuous Current
Input Power
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
TSSOP Package
θ
JA
Thermal Impedance
LFCSP Package
θ
JA
Thermal Impedance (4-Layer Board)
Lead Temperature, Soldering (10 sec)
IR Reflow, Peak Temperature (<20 sec)
ESD
Rating
–0.5 V to +4 V
–0.5 V to V
DD
+ 0.3 V
1
30 mA
18 dBm
–40°C to +85°C
–65°C to +150°C
150°C
143°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one
time.
Table 3. Truth Table
30.4°C/W
300°C
235°C
1 kV
INx
0
1
1
RF1x
Off
On
RF2x
On
Off
RF1x/RF2x off port inputs to ground = –0.5 V to V
DD
– 0.5 V.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. A | Page 4 of 16
ADG936/ADG936-R
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
RFCA
1
V
DD 2
GND
3
RF1A
4
GND
5
GND
6
RF1B
7
GND
8
GND
9
RFCB
10
20
19
GND
INA
GND
RF2A
ADG936
ADG936-R
18
17
V
DD
RFCA
17
GND
16
INA
19
18
20
GND
GND
1
RF1A
2
GND
3
GND
4
RF1B
5
15
GND
RF2A
GND
GND
16
GND
TOP VIEW
(Not to Scale)
15
GND
14
13
12
11
ADG936
ADG936-R
TOP VIEW
(Not to Scale)
14
13
12
RF2B
GND
INB
GND
04503-002
11
RF2B
GND
6
GND
7
RFCB
8
GND
9
INB
10
NOTES
1. EXPOSED PAD TIED TO SUBSTATE, GND.
Figure 5. 20-Lead TSSOP (RU-20)
Figure 6. 20-Lead 4 mm × 4 mm LFCSP (CP-20-1)
Table 4. Pin Function Descriptions
Pin No.
20-Lead
20-Lead
TSSOP
LFCSP
1
18
2
19
3, 5, 6, 8, 9,
11, 13, 15,
16, 18, 20
4
7
10
12
14
17
19
1, 3, 4, 6, 7,
9, 12, 13,
15, 17, 20
2
5
8
10
11
14
16
Mnemonic
RFCA
V
DD
GND
Description
Common RF Port for Switch A.
Power Supply Input. These parts can operate from 1.65 V to 2.75 V. V
DD
should be decoupled
to GND.
Ground Reference Point for All Circuitry on the Part.
RF1A
RF1B
RFCB
INB
RF2B
RF2A
INA
RF1A Port.
RF1B Port.
Common RF Port for Switch B.
Logic Control Input.
RF2B Port.
RF2A Port.
Logic Control Input.
Rev. A | Page 5 of 16
04503-003
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参数对比
与ADG936BCPZ-RL相近的元器件有:ADG936BCPZ-REEL7、ADG936BCPZ-REEL。描述及对比如下:
型号 ADG936BCPZ-RL ADG936BCPZ-REEL7 ADG936BCPZ-REEL
描述 Wideband 4 GH z, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20, 4 X 4 MM, LEAD FREE, MO-220VGGD-1, LFCSP-20, Multiplexer or Switch IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20, 4 X 4 MM, LEAD FREE, MO-220VGGD-1, LFCSP-20, Multiplexer or Switch
是否无铅 含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合
厂商名称 ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体)
零件包装代码 QFN QFN QFN
包装说明 HVQCCN, HVQCCN, HVQCCN,
针数 20 20 20
Reach Compliance Code compliant unknown unknown
ECCN代码 EAR99 EAR99 EAR99
模拟集成电路 - 其他类型 SPDT SPDT SPDT
JESD-30 代码 S-XQCC-N20 S-XQCC-N20 S-XQCC-N20
JESD-609代码 e3 e3 e3
长度 4 mm 4 mm 4 mm
信道数量 1 1 1
功能数量 2 2 2
端子数量 20 20 20
标称断态隔离度 36 dB 36 dB 36 dB
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 HVQCCN HVQCCN HVQCCN
封装形状 SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1 mm 1 mm 1 mm
最大供电电压 (Vsup) 2.75 V 2.75 V 2.75 V
最小供电电压 (Vsup) 1.65 V 1.65 V 1.65 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES
最长断开时间 13 ns 13 ns 13 ns
最长接通时间 14 ns 14 ns 14 ns
技术 CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 NO LEAD NO LEAD NO LEAD
端子节距 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD
处于峰值回流温度下的最长时间 40 40 40
宽度 4 mm 4 mm 4 mm
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