Changes to Ordering Guide .......................................................... 14
8/05—Rev. 0 to Rev. A
Changes to Table 1 ............................................................................ 3
Changes to Figure 6 .......................................................................... 5
Changes to Ordering Guide .......................................................... 14
7/04—Revision 0: Initial Version
Rev. B | Page 2 of 16
Data Sheet
SPECIFICATIONS
ADG936/ADG936-R
V
DD
= 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all specifications T
MIN
to T
MAX
, unless otherwise noted.
1
Table 1.
Parameter
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
3
3 dB Frequency
4
Input Power
4
Insertion Loss
Symbol
Conditions
Min
DC
0 V dc bias
0.5 V dc bias
DC to 100 MHz; V
DD
= 2.5 V ± 10%
500 MHz; V
DD
= 2.5 V ± 10%
1000 MHz; V
DD
= 2.5 V ± 10%
100 MHz
500 MHz
1000 MHz
100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
50% CTRL to 90% RF
50% CTRL to 10% RF
10% to 90% RF
90% to 10% RF
1000 MHz
900 MHz/901 MHz, 4 dBm
B Version
Typ
2
Max
2
4
7
16
0.5
0.8
1.25
Unit
GHz
GHz
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
ns
ns
dBm
dBm
mV p-p
V
V
V
V
µA
pF
pF
2.75
1
V
µA
S
21
, S
12
Isolation—RFCx to RF1x/RF2x
S
21
, S
12
Crosstalk—RF1x to RF2x
S
21
, S
12
Return Loss (On Channel)
4
S
11
, S
22
Return Loss (Off Channel)
4
S
11
, S
22
52
40
31
53
42
34
20
19
16
18
17
16
On Switching Time
4
Off Switching Time
4
Rise Time
4
Fall Time
4
1 dB Compression
4
Third-Order Intermodulation Intercept
Video Feedthrough
5
DC ELECTRICAL CHARACTERISTICS
Input High Voltage
Input Low Voltage
Input Leakage Current
CAPACITANCE
4
RF Port On Capacitance
Digital Input Capacitance
POWER REQUIREMENTS
V
DD
Quiescent Power Supply Current
1
2
t
ON
t
OFF
t
RISE
t
FALL
P
–1 dB
IP
3
27.5
0.4
0.6
0.9
60
47
36
69
45
37
25
23
24
24
23
21
11
10
6.1
6
16
32
3
14
13
8
8
V
INH
V
INH
V
INL
V
INL
I
I
C
RF
ON
C
DIG
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
0 ≤ V
IN
≤ 2.75 V
f = 1 MHz
f = 1 MHz
1.7
0.65 V
CC
0.7
0.35 V
CC
±1
± 0.1
2.5
2
1.65
I
DD
Digital inputs = 0 V or V
DD
0.1
Temperature range of B Version: −40°C to +85°C.
Typical values are at V
DD
= 2.5 V and 25°C, unless otherwise noted.
3
Operating frequency is the point at which insertion loss degrades by 1 dB.
4
Guaranteed by design, not subject to production test.
5
Video feedthrough is the dc transience at the output of any port of the switch when the control voltage is switched from high to low or from low to high in a 50 Ω test
setup, measured with 1 ns rise time pulses and a 500 MHz bandwidth.
Rev. B | Page 3 of 16
ADG936/ADG936-R
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter
V
DD
to GND
Inputs to GND
Continuous Current
Input Power
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
TSSOP Package
θ
JA
Thermal Impedance
LFCSP Package
θ
JA
Thermal Impedance (4-Layer Board)
Lead Temperature, Soldering (10 sec)
IR Reflow, Peak Temperature (<20 sec)
ESD
Rating
–0.5 V to +4 V
–0.5 V to V
DD
+ 0.3 V
1
30 mA
18 dBm
–40°C to +85°C
–65°C to +150°C
150°C
143°C/W
30.4°C/W
300°C
235°C
1 kV
Data Sheet
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one
time.
Table 3. Truth Table
INx
0
1
1
RF1x
Off
On
RF2x
On
Off
RF1x/RF2x off port inputs to ground = –0.5 V to V
DD
– 0.5 V.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
