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ADN2530YCPZ-500R7

SPECIALTY INTERFACE CIRCUIT, PQCC16, 3 X 3 MM, LEAD FREE, MO-220VEED-2,LFCSP-16

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rochester Electronics
零件包装代码
QFN
包装说明
HVQCCN,
针数
16
Reach Compliance Code
unknown
接口集成电路类型
INTERFACE CIRCUIT
JESD-30 代码
S-PQCC-N16
JESD-609代码
e3
长度
3 mm
湿度敏感等级
3
功能数量
1
端子数量
16
最高工作温度
100 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
HVQCCN
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
260
认证状态
COMMERCIAL
座面最大高度
0.9 mm
最大供电电压
3.53 V
最小供电电压
3.07 V
标称供电电压
3.3 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
MATTE TIN
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
3 mm
文档预览
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11.3 Gbps, Active Back-Termination,
Differential VCSEL Driver
ADN2530
FEATURES
Up to 11.3 Gbps operation
−40°C to +100°C operation
Very low power: I
SUPPLY
= 65 mA
Typical 26 ps rise/fall times
Full back-termination of output transmission lines
Crosspoint adjust function
PECL-/CML-compatible data inputs
Bias current range: 2 mA to 25 mA
Differential modulation current range: 2.2 mA to 23 mA
Automatic laser shutdown (ALS)
3.3 V operation
Compact 3 mm × 3 mm LFCSP
Voltage-input control for bias and modulation currents
XFP-compliant bias current monitor
GENERAL DESCRIPTION
The ADN2530 laser diode driver is designed for direct modula-
tion of packaged VCSELs with a differential resistance ranging
from 35 Ω to 140 Ω. The active back-termination technique
provides excellent matching with the output transmission lines
while reducing the power dissipation in the output stage. The
back-termination in the ADN2530 absorbs signal reflections
from the TOSA end of the output transmission lines, enabling
excellent optical eye quality to be achieved even when the
TOSA end of the output transmission lines is significantly
misterminated. The small package provides the optimum
solution for compact modules where laser diodes are packaged
in low pin count optical subassemblies.
The modulation and bias currents are programmable via the
MSET and BSET control pins. By driving these pins with
control voltages, the user has the flexibility to implement
various average power and extinction ratio control schemes,
including closed-loop control and look-up tables. The eye
crosspoint in the output eye diagram is adjustable via the
crosspoint adjust (CPA) control voltage input. The automatic
laser shutdown (ALS) feature allows the user to turn on/off the
bias and modulation currents by driving the ALS pin with the
proper logic levels. The product is available in a space-saving
3 mm × 3 mm LFCSP specified from −40°C to +100°C.
APPLICATIONS
10 Gb Ethernet optical transceivers
10G-BASE-LRM optical transceivers
8× and 10× Fibre Channel optical transceivers
XFP/X2/XENPAK/MSA 300 optical modules
SONET OC-192/SDH STM-64 optical transceivers
FUNCTIONAL BLOCK DIAGRAM
VCC
VCC
VCC
CPA
ALS
ADN2530
IMODP
100Ω
IMOD
IMODN
VCC
50Ω
50Ω
GND
DATAP
DATAN
CROSS
POINT
ADJUST
IBMON
IBIAS
800Ω
800Ω
200Ω
200Ω
200Ω
10Ω
05457-001
MSET
GND
BSET
Figure 1.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.
ADN2530
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Package Thermal Specifications ................................................. 4
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
Typical Performance Characteristics ............................................. 7
Theory of Operation ...................................................................... 10
Input Stage................................................................................... 10
Bias Current ................................................................................ 10
Automatic Laser Shutdown (ALS) ........................................... 11
Modulation Current................................................................... 11
Load Mistermination ................................................................. 13
Crosspoint Adjust....................................................................... 13
Power Consumption .................................................................. 13
Applications Information .............................................................. 15
Typical Application Circuit....................................................... 15
Layout Guidelines....................................................................... 15
Design Example.......................................................................... 16
Headroom Calculations ........................................................ 16
BSET and MSET Pin Voltage Calculation .......................... 16
IBIAS Monitor Accuracy Calculations................................ 17
Outline Dimensions ....................................................................... 18
Ordering Guide .......................................................................... 18
REVISION HISTORY
8/06—Rev. 0 to Rev. A
Changes to Figure 1.......................................................................... 1
Changes to Table 3............................................................................ 5
Changes to Figure 24...................................................................... 10
Changes to Figure 30...................................................................... 11
Changes to Modulation Current Section .................................... 12
Changes to Typical Application Circuit Section......................... 15
10/05—Revision 0: Initial Version
Rev. A | Page 2 of 20
ADN2530
SPECIFICATIONS
VCC = VCC
MIN
to VCC
MAX
, T
A
= −40°C to +100°C, 100 Ω differential load impedance, crosspoint adjust disabled, unless otherwise noted.
Typical values are specified at 25°C and IMOD = 10 mA with crosspoint adjust disabled, unless otherwise noted.
Table 1.
Parameter
BIAS CURRENT (IBIAS)
Bias Current Range
Bias Current While ALS Asserted
Compliance Voltage
1
MODULATION CURRENT (IMODP, IMODN)
Modulation Current Range
Modulation Current While ALS Asserted
Crosspoint Adjust (CPA) Range
2
Rise Time (20% to 80%)
2, 3, 4
Fall Time (20% to 80%)
2, 3, 4
Random Jitter
2, 3, 4
Deterministic Jitter
2, 4, 5
Deterministic Jitter
2, 4, 6
Differential |S22|
Compliance Voltage
1
DATA INPUTS (DATAP, DATAN)
Input Data Rate
Differential Input Swing
Differential |S11|
Input Termination Resistance
BIAS CONTROL INPUT (BSET)
BSET Voltage to IBIAS Gain
BSET Input Resistance
MODULATION CONTROL INPUT (MSET)
MSET Voltage to IMOD Gain
MSET Input Resistance
BIAS MONITOR (IBMON)
IBMON to IBIAS Ratio
Accuracy of IBIAS to IBMON Ratio
VCC − 0.7
Min
2
0.55
0.55
2.2
2.2
35
26
26.4
26
26.5
<0.5
<0.5
5.4
5.8
5.4
5.8
−5
−13.6
Typ
Max
25
50
VCC – 1.3
VCC – 0.8
23
19
250
65
32.5
34.7
32.5
33.7
Unit
mA
μA
V
V
mA diff
mA diff
μA diff
%
ps
ps
ps
ps
ps rms
ps rms
ps p-p
ps p-p
ps p-p
ps p-p
dB
dB
V
Gbps
V p-p diff
dB
Ω
mA/V
Ω
mA/V
Ω
μA/mA
%
%
%
%
%
V
V
μA
μA
Test Conditions/Comments
ALS = high
IBIAS = 25 mA
IBIAS = 2 mA
R
LOAD
= 35 Ω to 100 Ω differential
R
LOAD
= 140 Ω differential
ALS = high
CPA disabled
CPA 35% to 65%
CPA disabled
CPA 35% to 65%
CPA disabled
CPA 35% to 65%
10.7 Gbps, CPA disabled
10.7 Gbps, CPA 35% to 65%
11.3 Gbps, CPA disabled
11.3 Gbps, CPA 35% to 65%
5 GHz < f < 10 GHz, Z
0
= 100 Ω differential
f < 5 GHz, Z
0
= 100 Ω differential
8.2
8.2
8.2
8.2
VCC + 0.7
11.3
1.6
−15
100
20
1000
19
1000
50
115
24
1200
23
1200
0.4
85
15
800
14
800
NRZ
Differential ac-coupled
f < 10 GHz, Z
0
= 100 Ω differential
Differential
−5.0
−4.3
−3.5
−3.0
−2.5
2.4
−20
0
+5.0
+4.3
+3.5
+3.0
+2.5
IBIAS = 2 mA, R
IBMON
= 750 Ω
IBIAS = 4 mA, R
IBMON
= 750 Ω
IBIAS = 8 mA, R
IBMON
= 750 Ω
IBIAS = 14 mA, R
IBMON
= 750 Ω
IBIAS = 25 mA, R
IBMON
= 750 Ω
AUTOMATIC LASER SHUTDOWN (ALS)
V
IH
V
IL
I
IL
I
IH
0.8
+20
200
Rev. A | Page 3 of 20
ADN2530
Parameter
ALS Assert Time
ALS Negate Time
POWER SUPPLY
V
CC
I
CC 7
I
SUPPLY 8
1
2
Min
Typ
Max
2
10
Unit
μs
μs
Test Conditions/Comments
Rising edge of ALS to fall of IBIAS and IMOD
below 10% of nominal; see Figure 2
Falling edge of ALS to rise of IBIAS and IMOD
above 90% of nominal; see Figure 2
3.07
3.3
27
65
3.53
32
76
V
mA
mA
V
BSET
= V
MSET
= 0 V
V
BSET
= V
MSET
= 0 V
The voltage between the pin with the specified compliance voltage and GND.
Specified for T
A
= −40°C to +85°C due to test equipment limitation. See the Typical Performance Characteristics section for data on performance for T
A
= −40°C to +100°C.
3
The pattern used is composed of a repetitive sequence of eight 1s followed by eight 0s at 10.7 Gbps.
4
Measured using the high speed characterization circuit shown in Figure 3.
5
The pattern used is K28.5 (00111110101100000101) at 10.7 Gbps rate.
6
The pattern used is K28.5 (00111110101100000101) at 11.3 Gbps rate.
7
Only includes current in the ADN2530 VCC pins.
8
Includes current in ADN2530 VCC pins and dc current in IMODP and IMODN pull-up inductors. See the Power Consumption section for total supply current calculation.
PACKAGE THERMAL SPECIFICATIONS
Table 2.
Parameter
θ
J-TOP
θ
J-PAD
IC Junction Temperature
Min
65
2.6
Typ
72.2
5.8
Max
79.4
10.7
125
ALS
Unit
°C/W
°C/W
°C
Conditions/Comments
Thermal resistance from junction to top of package.
Thermal resistance from junction to bottom of exposed pad.
ALS
NEGATE TIME
t
IBIAS
AND IMOD
90%
10%
t
05457-002
ALS
ASSERT TIME
Figure 2. ALS Timing Diagram
VEE
VEE
750Ω
VBSET
TP1
TP2
VEE
GND
10Ω
10nF
GND
BSET IBMON IBIAS
GND
Z
0
= 50Ω
J2
GND
GND
Z
0
= 50Ω
J3
GND
GND
DC-BLOCK
GND
GND
VCC
MSET
CPA
ALS
VCC
GND
DC-BLOCK
GND
Z
0
= 50Ω
DATAN
IMODN
GND
BIAS TEE
GND
GND
BIAS TEE: PICOSECOND PULSE LABS MODEL 5542-219
ADAPTER: PASTERNACK PE-9436 2.92mm FEMALE-TO-FEMALE ADAPTER
ATTENUATOR: PASTERNACK PE-7046 2.92mm 10dB ATTENUATOR
DC-BLOCK: AGILENT BLOCKING CAPACITOR 11742A
05457-003
GND
VCC
GND
Z
0
= 50Ω
GND
BIAS TEE
50Ω
ADAPTER
GND
Z
0
= 50Ω
ADAPTER
ATTENUATOR
50Ω
GND
ATTENUATOR
OSCILLOSCOPE
GND
VCC
Z
0
= 50Ω
ADN2530
DATAP
IMODP
VMSET
VEE
VCPA
VEE
VEE
J8
GND
J5
GND
10nF
GND
VEE
10μF
GND
Figure 3. High Speed Characterization Circuit
Rev. A | Page 4 of 20
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