The AG604-89 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG604-89 typically provides
21 dB of gain, +33.5 dBm OIP3, and +19.5 dBm P1dB.
The device combines dependable performance with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85
qC
and is
housed in a lead-free/green/RoHS-compliant SOT-89
industry-standard SMT package.
The AG604-89 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG604-89 will work for other various applications
within the DC to 2.7 GHz frequency range such as CATV
and WiMAX.
1
RF IN
2
GND
3
RF OUT
Applications
x
x
x
x
x
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
RFID
WiMAX / WiBro
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Output IP2
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3
(2)
Device Voltage
Device Current
Typical Performance
(1)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
Typ
900
21.4
20
12
+19.4
+33.4
+45
3.5
1900
18.2
+19
+33.2
5.16
75
Max
2700
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
(2)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
22.5
-18
-16
+19.4
+33.5
3.5
Typical
900
21.4
-20
-12
+19.4
+33.4
3.5
1900
18.2
-35
-10
+19.0
+33.2
3.8
2140
17.6
-25
-10
+19.0
+32.9
3.8
17.2
19.2
1. Test conditions: 25 ºC, Supply Voltage = +6 V, R
bias
= 11.2 , 50 System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
¡
¡
Absolute Maximum Rating
Operating Case Temperature
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Parameter
-40 to +85
qC
-55 to +150
qC
+7 V
+10 dBm
+250
qC
Rating
Ordering Information
Part No.
AG604-89G
AG604-89PCB
Description
InGaP HBT Gain Block
700 – 2400 MHz Fully Assembled Eval. Board
Specifications and information are subject to change without notice
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5
June 2006
InGaP HBT Gain Block
AG604-89
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
23.2
-20
-29
+19.4
+33.6
3.4
500
22.5
-18
-16
+19.4
+33.5
3.5
¡
The Communications Edge
TM
Product Information
Supply Bias = +6 V, R
bias
= 11.2
:,
I
cc
= 75 mA
900
21.4
-20
-12
+19.4
+33.4
3.5
1900
18.2
-35
-10
+19.0
+33.2
3.8
¡
Typical Device RF Performance
2140
17.6
-25
-10
+19.0
+32.9
3.8
2400
16.9
-25
-10
+18.8
+32.4
3.9
3500
14.4
-19
-8
+16.2
5800
10.1
-15
-6
1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 5.16 V, Rbias = 11.2 , Icc = 75 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
24
22
Gain (dB)
Gain vs. Frequency
0
-10
-20
-30
Return Loss
120
Device Current (mA)
100
80
60
40
20
0
3.4
3.8
4.2
I-V Curve
20
18
16
14
12
0
-40 C
1
+25 C
+85 C
3
4
S11, S22 (dB)
Optimal operating point
S11
S22
-40
2
Frequency (GHz)
0
1
2
3
4
5
6
4.6
5.0
5.4
5.8
Frequency (GHz)
50
45
40
35
-40 C
+25 C
+85 C
Output IP2 vs. Frequency
Device Voltage (V)
40
35
30
25
Output IP3 vs. Frequency
5
4
NF (dB)
3
2
1
Noise Figure vs. Frequency
OIP3 (dBm)
-40 C
+25 C
+85 C
OIP2 (dBm)
-40 C
+25 C
+85 C
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
20
15
Gain (dB)
30
0
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
Frequency (MHz)
Output Power / Gain vs. Input Power
22
20
18
16
14
Output Power
-12
-8
-4
0
Input Power (dBm)
4
8
Gain
frequency = 900 MHz
Frequency (GHz)
Output Power / Gain vs. Input Power
24
O
utput Power (dBm
)
frequency = 2000 MHz
P1dB vs. Frequency
18
16
Gain (dB)
24
O
utput Power (dBm
)
P1dB (dBm)
20
16
12
8
4
Gain
20
16
12
8
Output Power
4
4
8
10
5
-40 C
+25 C
+85 C
14
12
10
8
-12
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
12
-8
-4
0
Input Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 2 of 5
June 2006
InGaP HBT Gain Block
AG604-89
Gain vs. Frequency
The Communications Edge
TM
Product Information
Typical Device RF Performance (cont’d)
Supply Bias = +8 V, R
bias
= 38
:,
I
cc
= 75 mA
40
35
30
25
-40 C
+25 C
+85 C
Output IP3 vs. Frequency
24
22
Gain (dB)
50
45
40
35
Output IP2 vs. Frequency
20
18
16
14
12
0
-40 C
1
+25 C
+85 C
3
4
OIP3 (dBm)
OIP2 (dBm)
-40 C
+25 C
+85 C
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P1dB vs. Frequency
30
2
Frequency (GHz)
0
200
400
600
800
1000
Frequency (MHz)
Noise Figure vs. Frequency
20
15
10
5
5
4
NF (dB)
3
2
1
P1dB (dBm)
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
0
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 3 of 5
June 2006
InGaP HBT Gain Block
Vcc
Icc = 75 mA
AG604-89
Application Circuit
R1
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
The Communications Edge
TM
Product Information
RF IN
AG604-89
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Recommended Component Values
Reference
Designator
50
500
L1
820 nH
220 nH
C1, C2, C4
.018 µF
1000 pF
Ref. Desig.
L1
C1, C2
C3
C4
R1
Frequency (MHz)
900
1900
2200
68 nH
27 nH
22 nH
100 pF
68 pF
68 pF
Size
0603
0603
0603
0805
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018
PF
chip capacitor
Do Not Place
10.0
:
1% tolerance
Recommended Bias Resistor Values
S upply
R1 value
S ize
Voltage
6V
11.2 ohms
0805
7V
24.5 ohms
1210
8V
38 ohms
1210
9V
51 ohms
2010
10 V
65 ohms
2010
12 V
91 ohms
2512
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (V
device
= +5.16 V, I
CC
= 75 mA, T = 25 C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
4250
4500
4750
5000
5250
5500
5750
6000
-21.02
-20.93
-21.67
-21.48
-21.14
-21.11
-21.02
-20.63
-20.16
-18.96
-18.42
-17.62
-16.99
-16.24
-15.25
-14.75
-14.09
-13.32
-12.78
-12.01
-11.42
-10.91
-10.07
-9.48
-9.24
176.97
167.34
156.28
144.30
138.44
130.15
123.48
121.82
115.19
110.58
109.32
106.38
102.88
100.26
92.23
89.12
84.37
81.46
76.94
71.30
66.87
60.24
55.04
51.03
46.08
22.84
22.70
22.19
21.63
20.90
20.08
19.35
18.55
17.86
17.11
16.47
15.75
15.12
14.54
13.92
13.42
12.93
12.35
11.87
11.34
10.79
10.24
9.71
9.26
8.80
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
¢
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
176.30
163.03
146.43
131.68
117.72
105.21
93.63
82.34
72.75
63.40
54.31
45.65
36.89
28.84
20.86
12.78
4.39
-2.84
-11.16
-18.78
-26.03
-33.13
-40.94
-46.90
-55.27
-25.02
-25.01
-24.96
-24.81
-24.60
-24.37
-24.14
-23.92
-23.50
-23.14
-22.93
-22.58
-22.23
-21.85
-21.64
-21.40
-21.06
-20.80
-20.62
-20.41
-20.12
-20.03
-19.99
-19.72
-19.45
0.11
0.10
-0.54
-1.02
-1.19
-2.45
-3.48
-4.63
-6.73
-8.83
-11.10
-14.33
-17.30
-20.87
-25.34
-28.81
-32.91
-37.16
-41.54
-46.34
-50.54
-56.69
-61.21
-65.66
-71.22
-35.04
-22.53
-16.95
-13.83
-11.97
-10.82
-9.83
-9.23
-8.61
-8.06
-7.62
-7.15
-6.90
-6.63
-6.29
-5.99
-5.69
-5.52
-5.17
-4.97
-4.67
-4.58
-4.24
-4.01
-3.93
-72.79
-107.76
-122.03
-138.27
-151.92
-165.62
-176.24
172.06
162.19
152.28
143.58
134.36
126.68
118.09
110.51
103.27
96.26
89.72
82.40
75.56
69.05
62.28
55.62
51.15
44.84
Web site: www.wj.com
Page 4 of 5
June 2006
InGaP HBT Gain Block
AG604-89
Outline Drawing
The Communications Edge
TM
Product Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260
qC
reflow temperature) and leaded
(maximum 245
qC
reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
AG604-89G (Green / Lead-free SOT-89 Package) Mechanical Information
Product Marking
The AG604-89G will be marked with an
“A604G” designator with an alphanumeric lot
code marked below the part designator. The
obsolete tin-lead package is marked with an
“AG604” designator followed by an
alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
Land Pattern
MSL / ESD Rating
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes 1000V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes 1000V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
¢
¤
¤
MSL Rating: Level 3 at +260 C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance, Rth
(1)
Junction Temperature, Tj
(2)
1000
MTTF (million hrs)
MTTF vs. GND Tab Temperature
Rating
-40 to +85
qC
154
qC
/ W
145
qC
100
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
+5.16V, 75 mA at an 85 C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177 C.
¢
¢
10
1
60
70
80
90
100 110
Tab Temperature (°C)
120
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135” ) diameter drill and have a final plated thru
diameter of .25 mm (.010” ).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Specifications and information are subject to change without notice
