AGB3311
50Ω High Linearity Low Noise
Internally Biased Wideband Gain Block
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
•
•
•
•
•
•
•
•
•
On-chip Active Bias
DC-4500 MHz Operation Bandwidth
+27 dBm Output IP3
6 dB Noise Figure at 850 MHz
20 dB Gain at 850 MHz
+15 dBm P1dB
SOT-89 Package
Single +5 V Supply
Case Temperature: -40 to +85 °C
APPLICATIONS
•
•
•
•
Cellular Base Stations for W-CDMA, CDMA,
TDMA, GSM, PCS and CDPD systems
Fixed Wireless
MMDS/WLL
WLAN
S24 Package
SOT-89
PRODUCT DESCRIPTION
The AGB3311 is one of a series of high performance
InGaP HBT amplifiers designed for use in
applications requiring high linearity, low noise, and
low distortion. Active bias circuits on-chip eliminate
the need for external resistive feedback, and no
external matching components are needed for
insertion into a 50Ω system. With a high output IP3,
low noise figure, and wide band operation, the
AGB3311 is ideal for wireless infrastructure
applications such as Cellular Base Stations, MMDS,
and WLL. Offered in a low cost SOT-89 surface mount
package, the AGB3311 requires a single +5 V supply,
and typically consumes 0.175 Watts of power.
RF Input
RF Output
/ Bias
Active
Bias
Figure 1: Block Diagram
07/2003
AGB3311
GND
4
1
RF
IN
2
GND
3
RF
OUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
1
2
3
4
NAME
RF
IN
GND
RF
OUT
GND
DESCRIPTION
RF Input
Ground
RF Output / Bias
Ground
2
PRELIMINARY DATA SHEET - Rev 1.0
07/2003
AGB3311
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Device Voltage (V
CC
)
RF Input Power (P
IN
)
Storage Temperature (T
STG
)
Junction Temperature
MIN
0
-
-40
-
MAX
+6
+10
+150
+200
UNIT
VD C
dB m
°C
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
(1)
Supply Voltage (V
SUPPLY
)
Case Temperature (T
C
)
IN
-
-
-40
TYP
-
+5
-
MAX
4500
-
+85
UNIT
MHz
VD C
°C
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
Notes:
(1) Operating frequency is defined by the output return loss (S22) having a VSWR less
than 2:1.
PRELIMINARY DATA SHEET - Rev 1.0
07/2003
3
AGB3311
Table 4: Electrical Specifications
(T
A
= +25 °C, V
SUPPLY
= +5 VDC, 50Ω system)
Ω
PARAMETER
Gain (S
21
)
850
1950
2140
2450
Output IP3
(1)
MIN
MHz
MHz
MHz
MHz
MHz
MHz
MHz
MHz
-
-
-
-
-
-
-
-
-
-
-
-
TYP
20
17.5
17.5
16.5
+27
+27
+27
+27
+15
6
320
37
MAX
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
dB
850
1950
2140
2450
dB m
Output 1dB Compression (P1dB)
850 MHz
Noise Figure
850 MHz
Thermal Resistance (
θ
JC
)
Supply Current
(I
CC
)
dB m
dB
°C/W
mA
Notes:
(1) OIP3 is measured with two tones at 1 MHz spacing at 0 dBm output power
per tone.
2. Performance as measured on ANADIGICS test fixture (see Figure 3).
All capacitors are muRata GRM39 series.
The inductor is a Coilcraft 0603CS series.
+5 VDC
10 pF
100 pF
0.01 µF
100 nH
0.01 µF
RF Input
AGB3311
0.01 µF
RF Output
Figure 3: Application Circuit (50
Ω
Terminations)
4
PRELIMINARY DATA SHEET - Rev 1.0
07/2003
AGB3311
PERFORMANCE DATA
Figure 4: Gain vs. Frequency
De-embedded 50
W
S-parameter
(T
A
= +25 °C, V
SUPPLY
= +5 V, I
CC
= 37 mA)
25
0
Figure 5: Isolation vs. Frequency
De-embedded 50
W
S-parameter
(T
A
= +25 °C, V
SUPPLY
= +5 V, I
CC
= 37 mA)
20
-10
Mag S12: Isolation (dB)
Mag S21: Gain (dB)
15
-20
10
-30
5
-40
0
0
1
2
3
4
5
6
7
-50
0
1
2
3
4
5
6
7
Frequency (GHz)
Frequency (GHz)
Figure 6: Input Return Loss vs. Frequency
De-embedded 50
W
S-parameter
(T
A
= +25 °C, V
SUPPLY
= +5 V, I
CC
= 37 mA)
0
0
Figure 7: Output Return Loss vs. Frequency
De-embedded 50
W
S-parameter
(T
A
= +25 °C, V
SUPPLY
= +5 V, I
CC
= 37 mA)
Mag S22: Output Return Loss (dB)
Mag S11: Input Return Loss (dB)
-10
-10
-20
-20
-30
-30
-40
-40
-50
0
1
2
3
4
5
6
7
-50
0
1
2
3
4
5
6
7
Frequency (GHz)
Frequency (GHz)
PRELIMINARY DATA SHEET - Rev 1.0
07/2003
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