AH125
½ W High Linearity InGaP HBT Amplifier
Applications
Repeaters
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
3-pin SOT-89 Package
Product Features
400 − 3600 MHz
+28 dBm P1dB
+45 dBm Output IP3
16.2 dB Gain @ 2140 MHz
150 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant SOT-89 Package
Class 2 HBM ESD rating (>2kV)
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
The AH125 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +45 dBm OIP3 and +28 dBm of compressed 1dB
power while drawing 150 mA current. The AH125 is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
The AH125 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium
power, and high efficiency are required. Internal biasing
allows the AH125 to maintain high linearity over
temperature and operate directly off a single +5V supply.
This combination makes the device an excellent
candidate for transceiver line cards in current and next
generation multi-carrier 3G base stations or repeaters.
Pin Configuration
Pin No.
1
3
2,4
Symbol
Vbias
RFin
RFout/Vcc
Ordering Information
Part No.
Description
½W
High Linearity Amplifier
AH125-89G
Standard T/R size = 1000 pieces on a 7” reel.
Datasheet: Rev D 01-25-16
© 2016 TriQuint Semiconductor, Inc
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Disclaimer: Subject to change without notice
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AH125
½ W High Linearity InGaP HBT Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,
CW, 50Ω, T=25
°
C
Device Voltage
Recommended Operating Conditions
Parameter
Case Temperature
Tj for >10
6
hours MTTF
Rating
−65 to 150°C
Input P
10
dB
+6 V
Min
−40
Typ
Max Units
+85
+200
°C
°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: V
SUPPLY
=+5 V, I
CQ
=150 mA (typ.), Temp= +25°C, tuned application circuit
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
W-CDMA Channel Power
Output P1dB
Output IP3
Noise Figure
Quiescent Collector Current
Thermal Resistance, θ
JC
Conditions
Min
400
14
Typ
2140
16.2
12
12
+19
+28
+45
4.4
150
Max
3600
18
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
C
/ W
At -50dBc ACLR, Note 1
Pout=+12 dBm/tone, Δf=1 MHz
+41
130
Junction to case
170
64.3
Performance Summary Table
Test conditions unless otherwise noted: V
SUPPLY
=+5 V, I
CQ
=150 mA (typ.), Temp= +25°C, tuned application circuit
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
W-CDMA Channel Power
Output P1dB
Output IP3
Noise Figure
Conditions
920
20
20
9.9
At -50 dBc ACLR, Note 1
Note 2
+19
+28.1
+47
7.7
Typical
1960
17
16
9
+19
+27.8
+47
4.6
2140
16.2
12
12
+19
+28.0
+45
4.4
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Notes:
1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz.
2. OIP3 is measured with two tones separated by 1 MHz.
Measured at Pout=+17dBm/tone for 900 MHz, +14 dBm/tone for 1960 MHz, and +12 dBm/tone for 2140 MHz.
Datasheet: Rev D 01-25-16
© 2016 TriQuint Semiconductor, Inc
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Disclaimer: Subject to change without notice
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AH125
½ W High Linearity InGaP HBT Amplifier
Device Characterization Data
Note:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in
the dashed red line.
S-Parameters
Test Conditions: V
DEVICE
=+5 V, I
CQ
=150 mA, T=+25
°
C, unmatched 50 ohm system
Freq (MHz)
100
300
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
3700
S11 (dB)
-2.51
-6.65
-0.47
-0.50
-0.56
-0.65
-0.78
-0.82
-0.93
-0.93
-0.94
-0.91
-0.93
-0.90
-0.96
-1.07
-1.18
-1.18
-1.11
S11 (ang)
176.96
-179.55
-166.72
179.58
173.91
170.52
166.87
163.90
161.34
157.61
154.21
151.59
149.24
145.94
143.87
139.90
136.50
133.80
132.39
S21 (dB)
19.12
16.82
19.86
16.95
15.09
13.68
12.37
11.21
10.11
9.40
8.47
7.66
7.06
6.70
6.12
5.74
5.09
4.62
4.12
S21 (ang)
153.71
171.45
129.11
110.14
99.64
91.32
83.49
76.80
71.12
64.93
58.83
53.42
49.26
43.87
39.45
34.00
29.36
24.20
20.26
S12 (dB)
-33.85
-41.51
-32.54
-32.11
-32.29
-32.15
-32.04
-32.11
-31.97
-31.94
-31.97
-31.80
-32.04
-31.63
-31.18
-31.37
-31.25
-31.12
-31.25
S12 (ang)
-7.98
-51.50
37.90
15.12
6.66
2.53
-2.50
-4.03
-7.89
-9.93
-10.87
-14.20
-16.18
-16.91
-18.50
-23.47
-20.88
-27.12
-26.33
S22 (dB)
-4.58
-3.50
-6.46
-4.57
-4.14
-3.89
-3.71
-3.64
-3.70
-3.64
-3.54
-3.48
-3.67
-3.72
-3.54
-3.52
-3.70
-3.72
-3.64
S22 (ang)
-168.55
167.66
-173.90
-177.11
177.58
173.40
169.83
167.10
164.08
160.19
156.60
153.92
152.18
147.67
143.63
141.32
140.24
135.07
130.47
Datasheet: Rev D 01-25-16
© 2016 TriQuint Semiconductor, Inc
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3 of 14
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Disclaimer: Subject to change without notice
www.triquint.com
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AH125
½ W High Linearity InGaP HBT Amplifier
869-960 MHz Application Circuit
Notes:
1. The primary RF microstrip line is 50
.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0
jumpers can be replaced with copper trace in target application.
4. The edge of R2 is placed at 280 mil from AH125 RFout pin. (14.3
o
at 920 MHz)
5. The edge of C9 is placed 35 mil from the edge of R2. (1.8
o
at 920 MHz)
6. The edge of R1 is placed at 100 mil from AH125 RFin pin. (5.1
o
at 920 MHz)
7. The edge of C10 is placed 130 mil from the edge of R1. (6.6
o
at 920 MHz)
C8
C3
C10
C1
R1
L1
R4
R2
C2
Typical Performance 869-960 MHz
Test conditions unless otherwise noted: V
SUPPLY
=+5 V, I
CQ
=150 mA (typ.), Temp= +25°C, tuned application circuit
Frequency
Gain
Input Return Loss
Output Return Loss
ACLR
Output P1dB
Output IP3
Noise Figure
C9
Conditions
869
20
14
10
-52
+27.4
+44
7.9
920
20
20
9.9
-52.5
+28.1
+47
7.7
960
20
22
9.9
-52
+27.9
+49
7.5
MHz
dB
dB
dB
dBc
dBm
dBm
dB
Pout = +18 dBm, Note 1
Pout=+17 dBm/tone, Δf=1 MHz
Notes:
1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz.
Datasheet: Rev D 01-25-16
© 2016 TriQuint Semiconductor, Inc
-
4 of 14
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
AH125
½ W High Linearity InGaP HBT Amplifier
Performance Plots 869-960 MHz
Test conditions unless otherwise noted: V
SUPPLY
=+5 V, I
CQ
=150 mA (typ.), Temp= +25°C, tuned application circuit
Gain vs. Frequency
22
0
-5
Input Return Loss vs. Frequency
0
-5
Output Return Loss vs. Frequency
21
|S21| (dB)
|S11| (dB)
|S22| (dB)
-10
-15
-20
-10
-15
-20
20
19
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
+25°C
+85°C
18
840
860
880
900
920
940
Frequency
(MHz)
960
980
-25
840
860
880
900
920
940
Frequency
(MHz)
960
980
-25
840
860
880
900
920
940
Frequency
(MHz)
960
980
Gain vs. Temperature
22
-40
-45
ACLR vs. Output Power over Frequency
-40
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
ACLR vs. Output Power over Temperature
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Freq.=920 MHz
T
LEAD
=+25°C
-45
21
|S21| (dB)
ACLR (dBc)
ACLR (dBc)
869 MHz
920 MHz
960 MHz
-50
-55
-60
-50
-55
-60
20
19
869 MHz
920 MHz
960 MHz
-65
-70
-65
-40°C
+25°C
+85°C
18
-40
-15
10
35
Temperature
(°C)
60
85
-70
14
15
16
17
18
Output Power
(dBm)
19
20
14
15
16
17
18
Output Power
(dBm)
19
20
OIP3 vs. Pout/Tone over Temperature
55
Freq.=920 MHz
1 MHz tone spacing
OIP3 vs. Pout/Tone over Frequency
55
T
LEAD
=+25°C
1 MHz tone spacing
OIP3 vs. Frequency
55
1 MHz tone spacing
Pout=+17dBm per tone
50
50
50
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)
869 MHz
920 MHz
960 MHz
45
45
45
40
-40°C
+25°C
+85°C
40
40
-40°C
+25°C
+85°C
35
10
11
12
13
14
15
16
Output Power per Tone
(dBm)
17
18
35
10
11
12
13
14
15
16
Output Power per Tone
(dBm)
17
18
35
860
880
900
920
Frequency
(MHz)
940
960
Current vs. Output Power
180
170
P1dB vs. Frequency
30
30
28
Output Power vs. Input Power
29
160
150
140
869 MHz
920 MHz
960 MHz
P1dB (dBm)
Icq (mA)
28
27
26
25
-40°C
+25°C
+85°C
Output Power (dBm)
26
24
22
20
869 MHz
920 MHz
960 MHz
130
10
12
14
16
18
Output Power
(dBm)
20
22
24
860
880
900
920
Frequency (MHz)
940
960
18
0
1
2
3
4
5
6
7
8
9
Input Power (dBm)
Datasheet: Rev D 01-25-16
© 2016 TriQuint Semiconductor, Inc
-
5 of 14
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Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
