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DVANCED

INEAR

EVICES,

NC.

ALD114804/ALD114804A/ALD114904/ALD114904A

VGS(th)= -0.40V

EPAD

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

PRECISION MATCHED PAIR MOSFET ARRAY

GENERAL DESCRIPTION

ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic

quad/dual depletion mode N-Channel MOSFETS matched at the factory using

ALD’s proven EPAD® CMOS technology. These devices are intended for low

voltage, small signal applications. They are excellent functional replacements for

normally-closed relay applications, as they are normally on (conducting) without

any power applied, but could be turned off or modulated when system power

supply is turned on. These MOSFETS have the unique characteristics of, when

the gate is grounded, operating in the resistance mode for low drain voltage lev-

els and in the current source mode for higher voltage levels and providing a

constant drain current.

ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for

exceptional device electrical characteristics matching. As these devices are on

the same monolithic chip, they also exhibit excellent temperature tracking char-

acteristics. They are versatile as design components for a broad range of analog

applications, such as basic building blocks for current sources, differential ampli-

fier input stages, transmission gates, and multiplexer applications.

Besides matched pair electrical characteristics, each individual MOSFET also

exhibits well controlled parameters, enabling the user to depend on tight design

limits corresponding to well matched characteristics.

These depletion mode devices are built for minimum offset voltage and differen-

tial thermal response, and they are suitable for switching and amplifying applica-

tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems

where low input bias current, low input capacitance and fast switching speed are

desired. These devices exhibit well controlled turn-off and sub-threshold

charactersitics and therefore can be used in designs that depend on sub-thresh-

old characteristics.

The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in

precision applications which require very high current gain, beta, such as current

mirrors and current sources. A sample calculation of the DC current gain at a

drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is

recommended that the user, for most applications, connect the V+ pin to the

most positive voltage and the V- and IC pins to the most negative voltage in the

system. All other pins must have voltages within these voltage limits at all times.

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -0.40V +/- 0.02V

• Nominal R

DS(ON)

=0.0V of 5.4KΩ

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

GS(th)

match (V

) — 20mV

• High input impedance — 10

Ω

typical

• Positive, zero, and negative V

GS(th)

temperature coefficient

• DC current gain >10

• Low input and output leakage currents

ORDERING INFORMATION

(“L” suffix denotes lead-free (RoHS))

Operating Temperature Range*

0°C to +70°C

16-Pin

8-Pin

SOIC

Plastic Dip

SOIC

Plastic Dip

Package

ALD114804ASCL ALD114804APCL ALD114904ASAL ALD114904APAL

ALD114804SCL ALD114804PCL ALD114904SAL ALD114904PAL

* Contact factory for industrial temp. range or user-specified threshold voltage values

APPLICATIONS

• Functional replacement of Form B (NC) relays

• Ultra low power (nanowatt) analog and digital

circuits

• Ultra low operating voltage (<0.2V) analog and

digital circuits

• Sub-threshold biased and operated circuits

• Zero power fail safe circuits in alarm systems

• Backup battery circuits

• Power failure and fail safe detector

• Source followers and high impedance buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Discrete analog switches and multiplexers

• Discrete voltage comparators

PIN CONFIGURATIONS

ALD114804

IC*

SCL, PCL PACKAGES

ALD114904

IC*

V-

IC*

V-

SAL, PAL PACKAGES

*IC pins are internally connected,

connect to V-

www.aldinc.com

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage,

10.6V

Gate-Source voltage,

10.6V

Power dissipation

500 mW

Operating temperature range SCL, PCL, SAL, PAL package

0°C to +70°C

Storage temperature range

-65°C to +150°C

Lead temperature, 10 seconds

+260°C

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V V- = -5V TA = 25

C unless otherwise specified

ALD114804A/ALD114904A

Parameter

Gate Threshold Voltage

Offset Voltage

VGS(th)1-VGS(th)2

Offset Voltage Tempco

GateThreshold Voltage Tempco

Symbol

VGS(th)

VOS

TCVOS

TCVGS(th)

Min

-0.42

Typ

-0.40

Max

-0.38

ALD114804/ALD114904

Min

-0.44

Typ

-0.40

Max

-0.36

Unit

µV/°C

mV/°C

Test Conditions

IDS =1µA, VDS = 0.1V

IDS =1µA

VDS1 = VDS2

ID = 1µA, VDS = 0.1V

ID = 20µA, VDS = 0.1V

ID = 40µA, VDS = 0.1V

VGS = +9.1V, VDS = +5V

VGS = +3.6V, VDS = +5V

VGS = +3.6V

VDS = +8.6V

-1.7

0.0

+1.6

12.0

3.0

1.4

-1.7

0.0

+1.6

12.0

3.0

1.4

On Drain Current

IDS (ON)

GFS

∆G

GOS

RDS (ON)

Forward Transconductance

mmho

Transconductance Mismatch

Output Conductance

1.8

µmho

Ω

VGS = +3.6V

VDS = +8.6V

VDS = +0.1V

VGS = +3.6V

VDS = +0.1V

VGS = +0.0V

Drain Source On Resistance

500

Drain Source On Resistance

RDS (ON)

∆R

DS (ON)

5.4

KΩ

Drain Source On Resistance

Tolerance

Drain Source On Resistance

Mismatch

Drain Source Breakdown

Voltage

Drain Source Leakage Current

∆R

DS (ON)

BVDSX

IDS (OFF)

IGSS

CISS

CRSS

ton

toff

0.5

IDS = 1.0µA

V-= VGS = -1.4V

VGS = -1.4V, VDS =+5V

TA = 125°C

VDS = 0V VGS = +5V

TA =125°C

400

200

400

200

Gate Leakage Current

Input Capacitance

Transfer Reverse Capacitance

Turn-on Delay Time

Turn-off Delay Time

Crosstalk

Notes:

2.5

0.1

2.5

0.1

V+ = 5V RL= 5KΩ

f = 100KHz

Consists of junction leakage currents

ALD114804/ALD114804A/ALD114904/ALD114904A

Advanced Linear Devices

2 of 11

PERFORMANCE CHARACTERISTICS OF EPAD®

PRECISION MATCHED PAIR MOSFET FAMILY

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic

quad/dual N-Channel MOSFETs matched at the factory using ALD’s

proven EPAD® CMOS technology. These devices are intended for

low voltage, small signal applications.

ALD’s Electrically Programmable Analog Device (EPAD) technol-

ogy provides the industry’s only family of matched transistors with

a range of precision threshold values. All members of this family

are designed and actively programmed for exceptional matching of

device electrical characteristics. Threshold values range from -

3.50V Depletion to +3.50V Enhancement devices, including stan-

dard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V,

+0.40V, +0.80V, +1.40V, and +3.30V. ALD can also provide any

customer desired value between -3.50V and +3.50V. For all these

devices, even the depletion and zero threshold transistors, ALD

EPAD technology enables the same well controlled turn-off, sub-

threshold, and low leakage characteristics as standard enhance-

ment mode MOSFETs. With the design and active programming,

even units from different batches and different date of manufacture

have well matched characteristics. As these devices are on the

same monolithic chip, they also exhibit excellent tempco tracking.

This EPAD MOSFET Array product family (EPAD MOSFET) is avail-

able in the three separate categories, each providing a distinctly

different set of electrical specifications and characteristics. The first

category is the ALD110800/ALD110900 Zero-Threshold

™

mode

EPAD MOSFETs. The second category is the ALD1108xx/

ALD1109xx enhancement mode EPAD MOSFETs. The third cat-

egory is the ALD1148xx/ALD1149xx depletion mode EPAD

MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1 V steps,

for example, xx=08 denotes 0.80V).

The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in

which the individual threshold voltage of each MOSFET is fixed at

zero. The threshold voltage is defined as I

= 1uA @ V

= 0.1V

when the gate voltage V

= 0.00V. Zero threshold devices oper-

ate in the enhancement region when operated above threshold volt-

age and current level (V

> 0.00V and I

> 1uA) and subthresh-

old region when operated at or below threshold voltage and cur-

rent level (V

<= 0.00V and I

< 1uA). This device, along with

other very low threshold voltage members of the product family,

constitute a class of EPAD MOSFETs that enable ultra low supply

voltage operation and nanopower type of circuit designs, applicable

in either analog or digital circuits.

The ALD1108xx/ALD1109xx (quad/dual) product family features

precision matched enhancement mode EPAD MOSFET devices,

which require a positive bias voltage to turn on. Precision threshold

values such as +1.40V, +0.80V, +0.20V are offered. No conductive

channel exists between the source and drain at zero applied gate

voltage for these devices, except that the +0.20V version has a

subthreshold current at about 20nA.

The ALD1148xx/ALD1149xx (quad/dual) features depletion mode

EPAD MOSFETs, which are normally-on devices when the gate

bias voltage is at zero volt. The depletion mode threshold voltage

is at a negative voltage level at which the EPAD MOSFET turns off.

Without a supply voltage and/or with V

= 0.0V the EPAD

MOSFET device is already turned on and exhibits a defined and

controlled on-resistance between the source and drain terminals.

The ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs are

different from most other types of depletion mode MOSFETs and

certain types of JFETs in that they do not exhibit high gate leakage

currents and channel/junction leakage currents. When negative

signal voltages are applied to the gate terminal, the designer/user

can depend on the EPAD MOSFET device to be controlled, modu-

lated and turned off precisely. The device can be modulated and

turned-off under the control of the gate voltage in the same manner

as the enhancement mode EPAD MOSFET and the same device

equations apply.

EPAD MOSFETs are ideal for minimum offset voltage and differen-

tial thermal response, and they are used for switching and amplify-

ing applications in low voltage (1V to 10V or +/-0.5V to +/-5V) or

ultra low voltage (less than 1V or +/- 0.5V) systems. They feature

low input bias current (less than 30pA max.), ultra low power

(microWatt) or Nanopower (power measured in nanoWatt) opera-

tion, low input capacitance and fast switching speed. These de-

vices can be used where a combination of these characteristics

are desired.

KEY APPLICATION ENVIRONMENT

EPAD( MOSFET Array products are for circuit applications in one

or more of the following operating environments:

* Low voltage: 1V to 10V or +/- 0.5V to +/- 5V

* Ultra low voltage: less than 1V or +/- 0.5V

* Low power: voltage x current = power measured in microwatt

* Nanopower: voltage x current = power measured in nanowatt

* Precision matching and tracking of two or more MOSFETs

ELECTRICAL CHARACTERISTICS

The turn-on and turn-off electrical characteristics of the EPAD

MOSFET products are shown in the Drain-Source On Current vs

Drain-Source On Voltage and Drain-Source On Current vs Gate-

Source Voltage graphs. Each graph show the Drain-Source On

Current versus Drain-Source On Voltage characteristics as a func-

tion of Gate-Source voltage in a different operating region under

different bias conditions. As the threshold voltage is tightly speci-

fied, the Drain-Source On Current at a given gate input voltage is

better controlled and more predictable when compared to many

other types of MOSFETs.

EPAD MOSFETs behave similarly to a standard MOSFET, there-

fore classic equations for a n-channel MOSFET applies to EPAD

MOSFET as well. The Drain current in the linear region (V

- V

GS(th)

) is given by:

= u . C

. W/L . [V

- V

GS(th)

- V

/2] . V

where:

u = Mobility

= Capacitance / unit area of Gate electrode

= Gate to Source voltage

GS(th)

= Turn-on threshold voltage

= Drain to Source voltage

W = Channel width

L = Channel length

In this region of operation the I

value is proportional to V

value

and the device can be used as gate-voltage controlled resistor.

For higher values of V

where V

>= V

- V

GS(th)

, the satura-

tion current I

is now given by (approx.):

= u . C

. W/L . [V

- V

GS(th)

3 of 11

ALD114804/ALD114804A/ALD114904/ALD114904A

Advanced Linear Devices

PERFORMANCE CHARACTERISTICS OF EPAD®

PRECISION MATCHED PAIR MOSFET FAMILY (cont.)

SUB-THRESHOLD REGION OF OPERATION

Low voltage systems, namely those operating at 5V, 3.3V or less,

typically require MOSFETs that have threshold voltage of 1V or

less. The threshold, or turn-on, voltage of the MOSFET is a voltage

below which the MOSFET conduction channel rapidly turns off. For

analog designs, this threshold voltage directly affects the operating

signal voltage range and the operating bias current levels.

At or below threshold voltage, an EPAD MOSFET exhibits a turn-

off characteristic in an operating region called the subthreshold re-

gion. This is when the EPAD MOSFET conduction channel rapidly

turns off as a function of decreasing applied gate voltage. The con-

duction channel induced by the gate voltage on the gate electrode

decreases exponentially and causes the drain current to decrease

exponentially. However, the conduction channel does not shut off

abruptly with decreasing gate voltage, but decreases at a fixed rate

of approximately 116mV per decade of drain current decrease. Thus

if the threshold voltage is +0.20V, for example, the drain current is

1uA at V

= +0.20V. At V

= +0.09V, the drain current would

decrease to 0.1uA. Extrapolating from this, the drain current is

0.01uA (10nA) at V

= -0.03V, 1nA at V

= -0.14V, and so forth.

This subthreshold characteristic extends all the way down to cur-

rent levels below 1nA and is limited by other currents such as junc-

tion leakage currents.

At a drain current to be declared “zero current” by the user, the Vgs

voltage at that zero current can now be estimated. Note that using

the above example, with V

GS(th)

= +0.20V, the drain current still

hovers around 20nA when the gate is at zero volt, or ground.

ZERO TEMPERATURE COEFFICIENT (ZTC) OPERATION

For an EPAD MOSFET in this product family, there exist operating

points where the various factors that cause the current to increase

as a function of temperature balance out those that cause the cur-

rent to decrease, thereby canceling each other, and resulting in net

temperature coefficient of near zero. One of this temperature stable

operating point is obtained by a ZTC voltage bias condition, which

is 0.55V above a threshold voltage when V

= V

, resulting in a

temperature stable current level of about 68uA. For other ZTC op-

erating points, see ZTC characteristics.

PERFORMANCE CHARACTERISTICS

Performance characteristics of the EPAD MOSFET product family

are shown in the following graphs. In general, the threshold voltage

shift for each member of the product family causes other affected

electrical characteristics to shift with an equivalent linear shift in

GS(th)

bias voltage. This linear shift in V

causes the subthresh-

old I-V curves to shift linearly as well. Accordingly, the subthreshold

operating current can be determined by calculating the gate volt-

age drop relative from its threshold voltage, V

GS(th)

RDS(ON) AT VGS=GROUND

Several of the EPAD MOSFETs produce a fixed resistance when

their gate is grounded. For ALD110800, the drain current at V

0.1V is at 1uA at V

= 0.0V. Thus just by grounding the gate of the

ALD110800, a resistor with R

DS(ON)

= ~100KOhm is produced.

When an ALD114804 gate is grounded, the drain current I

= 18.5

uA@ V

= 0.1V, producing R

DS(ON)

= 5.4KOhm. Similarly,

ALD114813 and ALD114835 produces 77uA and 185uA, respec-

tively, at V

= 0.0V, producing R

DS(ON)

values of 1.3KOhm and

540Ohm, respectively.

LOW POWER AND NANOPOWER

When supply voltages decrease, the power consumption of a given

load resistor decreases as the square of the supply voltage. So

one of the benefits in reducing supply voltage is to reduce power

consumption. While decreasing power supply voltages and power

consumption go hand-in-hand with decreasing useful AC bandwidth

and at the same time increases noise effects in the circuit, a circuit

designer can make the necessary tradeoffs and adjustments in any

given circuit design and bias the circuit accordingly.

With EPAD MOSFETs, a circuit that performs a specific function

can be designed so that power consumption can be minimized. In

some cases, these circuits operate in low power mode where the

power consumed is measure in micro-watts. In other cases, power

dissipation can be reduced to nano-watt region and still provide a

useful and controlled circuit function operation.

MATCHING CHARACTERISTICS

A key benefit of using matched-pair EPAD MOSFET is to maintain

temperature tracking. In general, for EPAD MOSFET matched pair

devices, one device of the matched pair has gate leakage currents,

junction temperature effects, and drain current temperature coeffi-

cient as a function of bias voltage that cancel out similar effects of

the other device, resulting in a temperature stable circuit. As men-

tioned earlier, this temperature stability can be further enhanced by

biasing the matched-pairs at Zero Tempco (ZTC) point, even though

that could require special circuit configuration and power consump-

tion design consideration.

ALD114804/ALD114804A/ALD114904/ALD114904A

Advanced Linear Devices

4 of 11

TYPICAL PERFORMANCE CHARACTERISTICS

OUTPUT CHARACTERISTICS

DRAIN-SOURCE ON RESISTANCE

(Ω)

DRAIN SOURCE ON CURRENT

(mA)

DRAIN-SOURCE ON RESISTANCE

vs. DRAIN-SOURCE ON CURRENT

2500

TA = 25°C

= +25°C

VGS-VGS(TH)=+5V

2000

1500

VGS = VGS(TH) +4V

VGS-VGS(TH)=+4V

VGS-VGS(TH)=+3V

VGS-VGS(TH)=+2V

1000

500

VGS = VGS(TH) +6V

VGS-VGS(TH)=+1V

100

1000

10000

DRAIN-SOURCE ON VOLTAGE (V)

DRAIN-SOURCE ON CURRENT (µA)

FORWARD TRANSFER CHARACTERISTICS

DRAIN- SOURCE ON CURRENT

(mA )

2.5

VGS(TH) = -3.5V

TRANSCONDUCTANCE vs.

AMBIENT TEMPERATURE

TRANSCONDUCTANCE

(mA/V)

= 25°C

= +10V

VGS(TH) = -1.3V

VGS(TH) = -0.4V

2.0

1.5

1.0

0.5

VGS(TH) = 0.0V

VGS(TH) = +0.2V

VGS(TH) = +1.4V

VGS(TH) = +0.8V

-4

-2

-50

-25

100

125

GATE-SOURCE VOLTAGE (V)

AMBIENT TEMPERATURE (°C)

SUBTHRESHOLD FORWARD TRANSFER

CHARACTERISTICS

DRAIN-SOURCE ON CURRENT

(nA)

10000

1000

VGS(TH)=-1.3V

TA = +25°C

VDS=+0.1V

SUBTHRESHOLD FORWARD TRANSFER

CHARACTERISTICS

DRAIN-SOURCE ON CURRENT

(nA)

100000

VGS(TH)=0.0V

1000

100

0.1

=0.1V

Slope ~ 110mV/decade

0.1

0.01

-4

-3

-2

VGS(TH)=-3.5V

VGS(TH)=+0.2V

VGS(TH)=+0.8V

VGS(TH)=+1.4V

100

VGS(TH)=-0.4V

-1

0.01

GS(th)

-0.5

GS(th)

-0.4

GS(th)

-0.3

GS(th)

-0.2

GS(th)

-0.1

GS(th)

GATE-SOURCE VOLTAGE (V)

ALD114804/ALD114804A/ALD114904/ALD114904A

Advanced Linear Devices

5 of 11

型号	ALD114904APAL	ALD114904SAL	ALD114904PAL	ALD114904ASAL	ALD114804PCL	ALD114804SCL	ALD114804ASCL	ALD114804APCL
描述	mosfet dual epad(R) N-Ch	mosfet dual epad(R) N-Ch	mosfet dual epad(R) N-Ch	mosfet dual epad(R) N-Ch	mosfet quad epad(R) N-Ch	mosfet quad epad(R) N-Ch	mosfet quad epad(R) N-Ch	mosfet quad epad(R) N-Ch
Manufacture	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices
产品种类 Product Category	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET
RoHS	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Transistor Polarity	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
Vgs - Gate-Source Breakdown Voltage	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V
Id - Continuous Drain Curre	12 mA	12 mA	12 mA	12 mA	12 mA	12 mA	12 mA	12 mA
Rds On - Drain-Source Resistance	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms
Configurati	Dual	Dual	Dual	Dual	Quad	Quad	Quad	Quad
最大工作温度 Maximum Operating Temperature	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C
Pd - Power Dissipati	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW
安装风格 Mounting Style	Through Hole	SMD/SMT	Through Hole	SMD/SMT	Through Hole	SMD/SMT	SMD/SMT	Through Hole
封装 / 箱体 Package / Case	PDIP-8	SOIC-8	PDIP-8	SOIC-8	PDIP-16	SOIC-16	SOIC-16	PDIP-16
Channel Mode	Depleti	Depleti	Depleti	Depleti	Depleti	Depleti	Depleti	Depleti
Forward Transconductance - Mi	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S
最小工作温度 Minimum Operating Temperature	0 C	0 C	0 C	0 C	0 C	0 C	0 C	0 C
工厂包装数量 Factory Pack Quantity	50	50	50	50	25	48	48	25
Typical Turn-Off Delay Time	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns