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AM1-G

Wide Band Low Power Amplifier, 60MHz Min, 3000MHz Max, 1 Func, GAAS, GREEN, TO-243C, SOT-89, 3 PIN

器件类别:无线/射频/通信    射频和微波   

厂商名称:Qorvo

厂商官网:https://www.qorvo.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Qorvo
包装说明
TO-243
Reach Compliance Code
compliant
其他特性
LOW NOISE, HIGH RELIABILITY
特性阻抗
50 Ω
构造
COMPONENT
增益
13 dB
最大输入功率 (CW)
7 dBm
JESD-609代码
e4
安装特点
SURFACE MOUNT
功能数量
1
端子数量
3
最大工作频率
3000 MHz
最小工作频率
60 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TO-243
电源
4.5 V
射频/微波设备类型
WIDE BAND LOW POWER
最大压摆率
100 mA
表面贴装
YES
技术
GAAS
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches
1
文档预览
AM1
High Dynamic Range Gain Block
Product Features
60 – 3000 MHz
14 dB Gain
2.4 dB Noise Figure
+39 dBm OIP3
Single +3.3 or +4.5 Supply
Internally matched to 50
Ω
Lead-free/Green/
RoHS-
compliant
SOT-89 Package
MTTF > 1000 years
Product Description
The AM1 is a general-purpose gain block that offers good
dynamic range and low noise figure in a low-cost surface-
mount package. The combination of near-constant OIP3
and low noise figure performance over frequency makes it
attractive for both narrowband and broadband applications.
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85
°C
and is available in the
environmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
The AM1 uses a high reliability GaAs MMIC technology
and only requires DC-blocking and bypass capacitors, and
an inductive RF choke for operation. Internal matching
provides a 50 ohm input / output impedance minimizing the
number of required external components.
The broadband MMIC amplifier is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AM1 will work for other applications within the 60 to 3000
MHz frequency range such as fixed wireless.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
(5)
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
(3)
Operating Current Range
Supply Voltage
Typical Performance
(4)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
Min
60
13
Typ
800
14
8.5
20
+18
+39
2.4
78
4.5
Max
3000
16
Parameter
Frequency
S21
S11
(5)
S22
Output P1dB
Output IP3
Noise Figure
Supply Voltage
Device Current
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
900
14
-10
-27
+18
+39
2.4
+4.5
78
Typical
1900
12.8
-9
-22
+18
+39
2.6
900
14
-10
-28
+16
+38
2.3
+3.3
75
1900
12.5
-9
-19
+16
+38
2.6
+36
55
100
1. Test conditions unless otherwise noted: T = 25 ºC, 50
Ω
system.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
4. Parameters reflect performance in an AM1-PCB application circuit, as shown on page 4.
5. Input return loss can be dramatically improved (<-20 dB) for narrowband applications as shown on
page 5 of this datasheet.
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
-55 to +150
°C
+5.5 V
+7 dBm
+160
°C
88
°C
/ W
Rating
Ordering Information
Part No.
AM1-G
AM1-PCB
Description
High Dynamic Range Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
0.8 – 2.6 GHz Fully Assembled Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice.
Page 1 of 6
January 2008
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com, www.TriQuint.com
AM1
High Dynamic Range Gain Block
S-Parameters (V
DS
= +4.5 V, I
DS
= 78mA, T = 25
°C,
50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
Typical Device Data
16
14
Gain (dB)
S11 (dB)
12
10
8
-40c
+25c
+85c
0
-5
0
-40c
+25c
+85c
-10
-15
-20
-25
-30
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Noise Figure vs. Frequency
-40c
+25c
+85c
S22 (dB)
-10
-20
-30
-40
0
500
1000
1500
2000
2500
3000
6
Frequency (MHz)
Output Power / Gain vs. Input Power
14
12 Gain
frequency = 900 MHz, Temp = +25° C
Frequency (MHz)
Output Power / Gain vs. Input Power
22
Output Power (dBm)
20
18
16
14
12
14
12
Gain (dB)
Gain
10
8
6
4
0
2
4
6
8
10
Input Power (dBm)
12
14
18
16
14
12
frequency = 1900 MHz, Temp = +25° C
6
5
NF (dB)
Gain (dB)
22
Output Power (dBm)
20
Output Power
Output Power
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Output IP3 vs. Output Power
40
35
30
25
-40c
20
0
2
4
6
8
10
+25c
+85c
frequency = 900 / 910 MHz
10
8
6
4
0
2
4
6
8
10
Input Power (dBm)
12
14
Output IP3 vs. Output Power
40
35
30
25
-40c
20
0
2
4
6
8
10
+25c
+85c
frequency = 1900 / 1910 MHz
ACPR vs. Channel Power
-35
-45
-55
-65
-75
6
7
25 °C, IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
freq = 1900 MHz
ACPR (dBc)
8
9
10
11
12
13
Output Power (dBm)
Output Power (dBm)
Output Channel Power (dBm)
S-Parameters (V
D
= +4.5 V, I
D
= 78 mA, T = 25
°C,
calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
-4.72
-8.67
-8.96
-9.06
-9.04
-9.00
-8.89
-8.74
-8.65
-8.40
-7.99
-7.93
-7.47
-30.88
-27.48
-37.68
-51.15
-66.87
-82.11
-97.31
-112.48
-128.51
-142.86
-157.26
-171.48
175.92
15.44
13.93
13.75
13.60
13.47
13.39
13.13
12.91
12.68
12.48
12.22
11.88
11.53
164.91
165.39
157.18
148.11
137.91
128.62
118.57
109.09
99.48
89.94
80.41
71.42
62.05
-21.66
-20.26
-20.14
-20.02
-19.92
-19.85
-19.73
-19.56
-19.71
-19.53
-19.40
-19.33
-19.58
30.26
3.92
-2.25
-7.65
-10.63
-15.19
-18.74
-23.00
-28.33
-33.37
-37.91
-42.30
-47.37
-9.38
-16.70
-17.56
-18.25
-19.05
-20.28
-21.30
-22.57
-25.15
-27.03
-28.58
-28.56
-28.48
-40.39
-32.88
-31.25
-35.67
-43.62
-51.49
-61.37
-73.75
-85.19
-103.19
-135.19
-177.83
153.84
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com, www.TriQuint.com
Page 2 of 6
January 2008
AM1
High Dynamic Range Gain Block
S-Parameters (V
DS
= +3.3 V, I
DS
= 75 mA, T = 25
°C,
50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
Typical Device Data
16
14
Gain (dB)
S11 (dB)
12
10
8
-40c
+25c
+85c
0
-5
0
-40c
+25c
+85c
-10
-15
-20
-25
-30
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Noise Figure vs. Frequency
-40c
+25c
+85c
S22 (dB)
-10
-20
-30
-40
0
500
1000
1500
2000
2500
3000
6
Frequency (MHz)
Output IP3 vs. Output Power
40
35
30
25
frequency = 900 / 910 MHz
Frequency (MHz)
6
5
NF (dB)
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Output Power / Gain vs. Input Power
14
12 Gain
Gain (dB)
10
8
6
4
0
2
4
6
8
10
Input Power (dBm)
12
14
frequency = 900 MHz, Temp = +25° C
-40c
20
0
2
4
+25c
6
+85c
8
10
Output Power (dBm)
Output Power / Gain vs. Input Power
20
Output Power (dBm)
18
16
14
12
10
14
12
Gain (dB)
Gain
10
8
6
4
0
2
4
6
8
10
Input Power (dBm)
12
14
Output Power
16
14
12
10
frequency = 1900 MHz, Temp = +25° C
20
Output Power (dBm)
Page 3 of 6
Output Power
18
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com, www.TriQuint.com
January 2008
AM1
High Dynamic Range Gain Block
Application Circuit: 800 – 2600 MHz (AM1-PCB)
+4.5V
ID=C4
C=1.8e4 pF
14
DB(|S[1,1]|) * (R)
DB(|S[2,1]|) * (L)
DB(|S[2,2]|) * (R)
0
13
ID=TL1
Z0=50 Ohm
L=170 mil
Eeff=3.52
Loss=0
F0=1 GHz
ID=L3
L=12 nH
NET="AM1"
ID=C5
C=56 pF
-5
S21 (dB)
CAP
ID=C2
C=56 pF
12
-10
11
-15
10
ID=L2
L=10 nH
-20
9
0.6
0.8
1
1.2
1.4
1.6
1.8
Frequency (GHz)
2
2.2
2.4
2.6
-25
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
Reference Design: 70 MHz
+4.5 V
C=1e4 pF
17
0
16
L=180 nH
C=1e4 pF
L=180 nH
NET="AM1"
C=1e4 pF
-5
S21 (dB)
15
-10
14
-15
13
C=5.6 pF
-20
DB(|S[1,1]|) (R)
DB(|S[2,1]|) (L)
DB(|S[2,2]|) (R)
12
0.04
0.05
0.06
0.07
0.08
Frequency (GHz)
0.09
0.1
0.11
-25
Reference Design: 170 MHz
+4.5 V
C=1e4 pF
17
DB(|S[1,1]|) (R)
DB(|S[2,1]|) (L)
DB(|S[2,2]|) (R)
0
16
L=220 nH
C=1000 pF
L=39 nH
NET="AM1"
C=1000 pF
-5
S21 (dB)
15
-10
14
-15
13
C=3.9 pF
-20
12
0.1
0.13
0.16
0.19
Frequency (GHz)
0.22
0.25
-25
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com, www.TriQuint.com
Page 4 of 6
January 2008
S11, S22 (dB)
S11, S22 (dB)
S11, S22 (dB)
AM1
High Dynamic Range Gain Block
Reference Design: 450 MHz
+4.5 V
C=1e4 pF
16
DB(|S[1,1]|) (R)
DB(|S[2,1]|) (L)
DB(|S[2,2]|) (R)
0
15
L=82 nH
C=1000 pF
L=15 nH
NET="AM1"
C=1000 pF
-5
S21 (dB)
14
-10
13
-15
12
C=1.2 pF
-20
11
0.3
0.35
0.4
0.45
0.5
0.55
Frequency (GHz)
0.6
0.65
0.7
-25
Reference Design: 800 MHz
15
+4.5 V
0
14
C=1e4 pF
-5
S11, S22 (dB)
S11, S22 (dB)
S11, S22 (dB)
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
C=100 pF
IND
L=33 nH
C=100 pF
L=6.8 nH
NET="AM1"
C=100 pF
S21 (dB)
13
-10
12
-15
PORT
11
-20
10
0.6
0.7
0.8
0.9
1
Frequency (GHz)
1.1
1.2
-25
Reference Design: 1900 / 2140 MHz
+4.5 V
14
CAP
C=1e4 pF
CAP
C=56 pF
0
13
-5
CAP
ID=C1
C=3.9 pF
TLINP
ID=TL1
Z0=50 Ohm
L=150 mil
Eeff=3.4
Loss=0
F0=2 GHz
SUBCKT
NET="AM1"
IND
ID=L2
L=33 nH
S21 (dB)
12
-10
11
-15
IND
ID=L1
L=3.3 nH
CAP
ID=C3
C=56 pF
10
DB(|S(1,1)|) (R)
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
-20
9
1.5
1.6
1.7
1.8
1.9
2
Frequency (GHz)
2.1
2.2
2.3
-25
Reference Design: CATV Single-ended Operation
16
0
+4.5 V
C=1.8e4 pF
15
-5
L=100 nH
NET="AM1"
Z=75 Ohm
L=4.7 nH
R=5 Ohm
C=1000 pF
Z=75 Ohm
S21 (dB)
14
-10
13
-15
12
DB(|S[1,1]|) (R)
DB(|S[2,1]|) (L)
DB(|S[2,2]|) (R)
-20
11
0
0.2
0.4
0.6
Frequency (GHz)
0.8
1
-25
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com, www.TriQuint.com
Page 5 of 6
January 2008
S11, S22 (dB)
查看更多>
参数对比
与AM1-G相近的元器件有:。描述及对比如下:
型号 AM1-G
描述 Wide Band Low Power Amplifier, 60MHz Min, 3000MHz Max, 1 Func, GAAS, GREEN, TO-243C, SOT-89, 3 PIN
是否无铅 不含铅
是否Rohs认证 符合
厂商名称 Qorvo
包装说明 TO-243
Reach Compliance Code compliant
其他特性 LOW NOISE, HIGH RELIABILITY
特性阻抗 50 Ω
构造 COMPONENT
增益 13 dB
最大输入功率 (CW) 7 dBm
JESD-609代码 e4
安装特点 SURFACE MOUNT
功能数量 1
端子数量 3
最大工作频率 3000 MHz
最小工作频率 60 MHz
最高工作温度 85 °C
最低工作温度 -40 °C
封装主体材料 PLASTIC/EPOXY
封装等效代码 TO-243
电源 4.5 V
射频/微波设备类型 WIDE BAND LOW POWER
最大压摆率 100 mA
表面贴装 YES
技术 GAAS
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches 1
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