首页 > 器件类别 > 存储 > 存储

AM27X128-255PI

OTP ROM, 16KX8, 250ns, CMOS, PDIP28, PLASTIC, DIP-28

器件类别:存储    存储   

厂商名称:SPANSION

厂商官网:http://www.spansion.com/

下载文档
器件参数
参数名称
属性值
厂商名称
SPANSION
零件包装代码
DIP
包装说明
DIP,
针数
28
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
250 ns
JESD-30 代码
R-PDIP-T28
长度
37.084 mm
内存密度
131072 bit
内存集成电路类型
OTP ROM
内存宽度
8
功能数量
1
端子数量
28
字数
16384 words
字数代码
16000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
16KX8
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
并行/串行
PARALLEL
认证状态
Not Qualified
座面最大高度
5.715 mm
最大供电电压 (Vsup)
5.25 V
最小供电电压 (Vsup)
4.75 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
INDUSTRIAL
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
宽度
15.24 mm
文档预览
FINAL
Am27X128
128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device
DISTINCTIVE CHARACTERISTICS
s
As an OTP EPROM alternative:
— Factory optimized programming
— Fully tested and guaranteed
s
As a Mask ROM alternative:
— Shorter leadtime
— Lower volume per code
s
Fast access time
— 55 ns
s
Single +5 V power supply
s
Compatible with JEDEC-approved EPROM
pinout
s
±10%
power supply tolerance
s
High noise immunity
s
Low power dissipation
— 100 µA maximum CMOS standby current
s
Available in Plastic Dual-In-line Package (PDIP)
and Plastic Leaded Chip Carrier (PLCC)
s
Latch-up protected to 100 mA from –1 V to
V
CC
+ 1 V
s
Versatile features for simple interfacing
— Both CMOS and TTL input/output compatibility
— Two line control functions
GENERAL DESCRIPTION
The Am27X128 is a factory programmed and tested
OTP EPROM. It is programmed after packaging prior to
final test. Every device is rigorously tested under AC
and DC operating conditions to your stable code. It is
organized as 16 Kwords by 8 bits per word and is avail-
able in plastic dual in-line packages (PDIP), as well as
plastic leaded chip carrier (PLCC) packages. Express-
ROM devices provide a board-ready memory solution
for medium to high volume codes with short leadtimes.
This offers manufacturers a cost-effective and flexible
alternative to OTP EPROMs and mask programmed
ROMs.
Data can be accessed as fast as 55 ns, allowing
high-performance microprocessors to operate with re-
duced WAIT states. The device offers separate Output
Enable (OE#) and Chip Enable (CE#) controls, thus
eliminating bus contention in a multiple bus micropro-
cessor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 80 mW in active mode, and
100 µW in standby mode.
BLOCK DIAGRAM
V
CC
V
SS
OE#
CE#
Output Enable
Chip Enable
and
Prog Logic
Y
Decoder
A0–A13
Address
Inputs
Output
Buffers
Data Outputs DQ0–DQ7
Y
Gating
X
Decoder
131,072
Bit Cell
Matrix
12083F-1
Publication#
12083
Rev:
F
Amendment/0
Issue Date:
May 1998
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options
V
CC
= 5.0 V
±
5%
V
CC
= 5.0 V
±
10%
-55
55
55
35
-70
70
70
40
-90
90
90
40
-120
120
120
50
-150
150
150
50
-200
200
200
50
250
250
50
Am27X128
-255
Max Access Time (ns)
CE# (E#) Access (ns)
OE# (G#) Access (ns)
CONNECTION DIAGRAMS
Top View
DIP
PLCC
PGM# (P#)
A13
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
25
24
23
22
21
20
19
18
17
16
15
PGM# (P#)
A13
A8
A9
A11
OE# (G#)
A10
CE # (E#)
DQ7
DQ6
DQ5
DQ4
DQ3
12083F-2
4 3 2 1 32 31 30
A6
A5
A4
A3
A2
A1
A0
NC
DQ0
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20
V
SS
DU
DQ3
DQ1
DQ2
DQ4
DQ5
29
28
27
26
25
24
23
22
21
A8
A9
A11
NC
OE# (G#)
A10
CE# (E#)
DQ7
DQ6
V
CC
A7
A12
V
PP
V
PP
1
28
V
CC
DU
12083F-3
Notes:
1. JEDEC nomenclature is in parenthesis.
2. Don’t use (DU) for PLCC.
PIN DESIGNATIONS
A0–A13
CE# (E#)
DQ0–DQ7
OE# (G#)
PGM# (P#)
V
CC
V
PP
V
SS
NC
= Address Inputs
= Chip Enable Input
= Data Input/Outputs
= Output Enable Input
= Program Enable Input
LOGIC SYMBOL
14
A0–A13
DQ0–DQ7
CE# (E#)
8
= V
CC
Supply Voltage
= Program Voltage Input
= Ground
= No Internal Connection
12083F-4
OE# (G#)
2
Am27X128
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
AM27X128
-55
J
C
XXXXX
CODE DESIGNATION
Assigned by AMD
TEMPERATURE RANGE
C = Commercial (0°C to +70
°
C)
I = Industrial (–40
°
C to +85
°
C)
PACKAGE TYPE
P = 28-Pin Plastic Dual In-Line Package (PD 028)
J = 32-Pin Plastic Leaded Chip Carrier (PL 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am27X128
128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device
Valid Combinations
AM27X128-55
AM27X128-70
AM27X128-90
AM27X128-120
AM27X128-150
AM27X128-200
AM27X128-255
V
CC
= 5.0 V
±
5%
PC, JC, PI, JI
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am27X128
3
FUNCTIONAL DESCRIPTION
Read Mode
To obtain data at the device outputs, Chip Enable (CE#)
and Output Enable (OE#) must be driven low. CE# con-
trols the power to the device and is typically used to se-
lect the device. OE# enables the device to output data,
independent of device selection. Addresses must be
stable for at least t
ACC
–t
OE
. Refer to the Switching
Waveforms section for the timing diagram.
CE# should be decoded and used as the primary de-
vice-selecting function, while OE# be made a common
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
Standby Mode
The device enters the CMOS standby mode when CE#
is at V
CC
±
0.3 V. Maximum V
CC
current is reduced to
100 µA. The device enters the TTL-standby mode
when CE# is at V
IH
. Maximum V
CC
current is reduced
to 1.0 mA. When in either standby mode, the device
places its outputs in a high-impedance state, indepen-
dent of the OE# input.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
V
CC
and V
SS
to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on Express-
ROM device arrays, a 4.7 µF bulk electrolytic capacitor
should be used between V
CC
and V
SS
for each eight
devices. The location of the capacitor should be close
to where the power supply is connected to the array.
Output OR-Tieing
To accommodate multiple memory connections, a
two-line control function provides:
s
Low memory power dissipation, and
s
Assurance that output bus contention will not occur.
MODE SELECT TABLE
Mode
Read
Output Disable
Standby (TTL)
Standby (CMOS)
CE#
V
IL
X
V
IH
V
CC
±
0.3 V
OE#
V
IL
V
IH
X
X
PGM#
X
X
X
X
V
PP
X
X
X
X
Outputs
D
OUT
High Z
High Z
High Z
Note:
X = Either V
IH
or V
IL
.
4
Am27X128
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
OTP Products. . . . . . . . . . . . . . . . . . –65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Voltage with Respect to V
SS
All pins except V
CC
. . . . . . . . . –0.6 V to V
CC
+ 0.6 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . . . –0.6 V to 7.0 V
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . .0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . .–40°C to +85°C
Supply Read Voltages
V
CC
for ± 5% devices . . . . . . . . . . +4.75 V to +5.25 V
V
CC
for ± 10% devices . . . . . . . . . +4.50 V to +5.50 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
Note:
1. Minimum DC voltage on input or I/O pins –0.5 V. During
voltage transitions, the input may overshoot V
SS
to –2.0 V
for periods of up to 20 ns. Maximum DC voltage on input
and I/O pins is V
CC
+ 5 V. During voltage transitions, input
and I/O pins may overshoot to V
CC
+ 2.0 V for periods up
to 20ns.
Stresses above those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure of
the device to absolute maximum ratings for extended periods
may affect device reliability.
Am27X128
5
查看更多>
max3232cse 不工作?
MAX3232CSE不工作,用过的给个经验或见解.我电路按PDF说明书做的,工作电压为3.3V,电容...
zcyxh12345 单片机
【STM32H5 NUCLEO H533RE测评】08 Labview上位机控制步进电机运动
第一部分:上位机程序设计 打开labview案例库 增加控制按钮 UI界...
Maker_kun stm32/stm8
【瑞萨电子MCU套件免费试用】自行车炫彩风火轮开发应用笔记——(2)系统设计与硬件
本帖最后由 xsunset 于 2014-9-22 16:17 编辑 1 自行车风...
xsunset 瑞萨电子MCU
【转】降低印制电路制作成本的有效措施
作为降低刚性多层 印制线路板 制作成本的措施,可以从印制线路板的种类、尺寸、加工工艺和材料等多...
okhxyyo PCB设计
有关IAR FOR AVR 分配在数组的疑问
一个项目里,用到M128,外置32KRAM,有几个全局大数组,2个4000数组,三个1000数组(嘿...
flcqzc 嵌入式系统
Nordic nRF54H20DK开发板开箱测评
今天收到了Nordic最新的旗舰级BLE芯片 nRF54H20的开发板,做一个简单的开箱测评。包装...
hannibalwhz RF/无线
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消