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Am29DL640D

Data Sheet

This product has been retired and is not available for designs.

For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-

recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering informa-

tion.

For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL064J supersedes Am29DL640D

and is the factory-recommended migration path. Please refer to the S29PL064J Datasheet for specifications and

ordering information.

Availability of this document is retained for reference and historical purposes only.

July 2003

The following document specifies Spansion memory products that are now offered by both Advanced

Micro Devices and Fujitsu. Although the document is marked with the name of the company that

originally developed the specification, these products will be offered to customers of both AMD and

Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a Spansion product. Any

changes that have been made are the result of normal datasheet improvement and are noted in the

document revision summary, where supported. Future routine revisions will occur when appropri-

ate, and changes will be noted in a revision summary.

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To

order these products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about Spansion mem-

ory solutions.

Publication Number

23695

Revision

Amendment

Issue Date

December 13, 2005

A D V A N C E

I N F O R M A T I O N

THIS PAGE LEFT INTENTIONALLY BLANK

December 13, 2005

Am29DL640D

64 Megabit (8 M x 8-Bit/4 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

This product has been retired and is not available for designs.

For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet

for specifications and ordering information.

For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL064J supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the

S29PL064J Datasheet for specifications and ordering information.

Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in another bank.

— Zero latency between read and write operations

Flexible Bank

architecture

— Read may occur in any of the three banks not being

written or erased.

— Four banks may be grouped by customer to achieve

desired bank divisions.

Boot Sectors

— Top and bottom boot sectors in the same device

— Any combination of sectors can be erased

Manufactured on 0.23 µm process technology

Secured Silicon Sector: Extra 256 Byte sector

—

Factory locked and identifiable:

16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

—

Customer lockable:

Can be read or programmed just

like other sectors. Once locked, data cannot be

changed

Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero.

Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash standard

PACKAGE OPTIONS

63-ball Fine Pitch BGA

■

48-pin TSOP

PERFORMANCE CHARACTERISTICS

High performance

— Access time as fast as 90 ns

— Program time: 4 µs/word typical utilizing Accelerate

function

Ultra low power consumption (typical values)

— 2 mA active read current at 1 MHz

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

Minimum 1 million erase cycles guaranteed per

sector

20 year data retention at 125°C

— Reliable operation for the life of the system

SOFTWARE FEATURES

Data Management Software (DMS)

— AMD-supplied software manages data programming,

enabling EEPROM emulation

— Eases historical sector erase flash limitations

Supports Common Flash Memory Interface (CFI)

Program/Erase Suspend/Erase Resume

— Suspends program/erase operations to allow

programming/erasing in same bank

Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

HARDWARE FEATURES

Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to the read mode

WP#/ACC input pin

— Write protect (WP#) function protects sectors 0, 1,

140, and 141, regardless of sector protect status

— Acceleration (ACC) function accelerates program

timing

Sector protection

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

Publication#

23695

Rev:

Amendment/3

Issue Date:

December 13, 2005

Refer to AMD’s Website (www.amd.com) for the latest information.

GENERAL DESCRIPTION

The Am29DL640D is a 64 megabit, 3.0 volt-only flash

memory device, organized as 4,194,304 words of 16

bits each or 8,388,608 bytes of 8 bits each. Word

mode data appears on DQ0–DQ15; byte mode data

appears on DQ0–DQ7. The device is designed to be

programmed in-system with the standard 3.0 volt V

supply, and can also be programmed in standard

EPROM programmers.

The device is available with an access time of 90 or

120 ns and is offered in 48-pin TSOP and 63-ball

Fine-Pitch BGA. Standard control pins—chip enable

(CE#), write enable (WE#), and output enable

(OE#)—control normal read and write operations, and

avoid bus contention issues.

The device requires only a

single 3.0 volt power sup-

ply

for both read and write functions. Internally

generated and regulated voltages are provided for the

program and erase operations.

byte ESN (Electronic Serial Number), customer code

(programmed through AMD’s ExpressFlash service),

or both. Customer Lockable parts may utilize the Se-

cured Silicon Sector as bonus space, reading and

writing like any other flash sector, or may permanently

lock their own code there.

DMS (Data Management Software)

allows systems

to easily take advantage of the advanced architecture

of the simultaneous read/write product line by allowing

removal of EEPROM devices. DMS also allows the

system software to be simplified, as it performs all

functions necessary to modify data in file structures,

as opposed to single-byte modifications. To write or

update a particular piece of data (a phone number or

configuration data, for example), the user only needs

to state which piece of data is to be updated, and

where the updated data is located in the system. This

i s a n a d va n t a g e c o m p a r e d t o s y s t e m s w h e r e

user-written software must keep track of the old data

location, status, logical to physical translation of the

data onto the Flash memory device (or memory de-

vices), and more. Using DMS, user-written software

does not need to interface with the Flash memory di-

rectly. Instead, the user's software accesses the Flash

memory by calling one of only six functions. AMD pro-

vides this software to simplify system design and

software integration efforts.

The device offers complete compatibility with the

JEDEC single-power-supply Flash command set

standard.

Commands are written to the command

Reading data out of the device is similar to reading

from other Flash or EPROM devices.

The host system can detect whether a program or

erase operation is complete by using the device

sta-

tus bits:

RY/BY# pin, DQ7 (Data# Polling) and

DQ6/DQ2 (toggle bits). After a program or erase cycle

has been completed, the device automatically returns

to the read mode.

The

sector erase architecture

allows memory sec-

tors to be erased and reprogrammed without affecting

the data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection

measures include a low

detector that automatically inhibits write opera-

tions during power transitions. The

hardware sector

protection

feature disables both program and erase

operations in any combination of the sectors of mem-

o r y. T h i s c a n b e a c h i ev e d i n - s y s t e m o r v i a

programming equipment.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the

automatic sleep mode.

The system can also place the device into the

standby mode.

Power consumption is greatly re-

duced in both modes.

Simultaneous Read/Write Operations with

Zero Latency

The Simultaneous Read/Write architecture provides

simultaneous operation

by dividing the memory

space into

four banks,

two 8 Mb banks with small and

large sectors, and two 24 Mb banks of large sectors.

Sector addresses are fixed, system software can be

used to form user-defined bank groups.

During an Erase/Program operation, any of the three

non-busy banks may be read from. Note that only two

banks can operate simultaneously. The device can im-

prove overall system performance by allowing a host

system to program or erase in one bank, then

immediately and simultaneously read from the other

bank, with zero latency. This releases the system from

waiting for the completion of program or erase

operations.

The Am29DL640D can be organized as both a top and

bottom boot sector configuration.

Bank

Bank 1

Bank 2

Bank 3

Bank 4

Megabits

8 Mb

24 Mb

8 Mb

Sector Sizes

Eight 8 Kbyte/4 Kword,

Fifteen 64 Kbyte/32 Kword

Forty-eight 64 Kbyte/32 Kword

Eight 8 Kbyte/4 Kword,

Fifteen 64 Kbyte/32 Kword

Am29DL640D Features

The

Secured Silicon Sector

is an extra 256 byte sec-

tor capable of being permanently locked by AMD or

customers. The

Secured Silicon Indicator Bit

(DQ7)

is permanently set to a 1 if the part is

factory locked,

and set to a 0 if

customer lockable.

This way, cus-

tomer lockable parts can never be used to replace a

factory locked part.

Factory locked parts provide several options. The Se-

cured Silicon Sector may store a secure, random 16

Am29DL640D

December 13, 2005

TABLE OF CONTENTS

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9

Table 1. Am29DL640D Device Bus Operations ................................9

Write Operation Status . . . . . . . . . . . . . . . . . . . . 29

DQ7: Data# Polling ................................................................. 29

Figure 6. Data# Polling Algorithm .................................................. 29

RY/BY#: Ready/Busy# ......................................... 30

DQ6: Toggle Bit I .................................................................... 30

Figure 7. Toggle Bit Algorithm........................................................ 30

Word/Byte Configuration ........................................ 9

Requirements for Reading Array Data ..................................... 9

Writing Commands/Command Sequences ............................ 10

Accelerated Program Operation ............................................. 10

Autoselect Functions .............................................................. 10

Simultaneous Read/Write Operations with Zero Latency ....... 10

Standby Mode ...................................................... 10

Automatic Sleep Mode ........................................................... 11

RESET#: Hardware Reset Pin ............................................... 11

Output Disable Mode .............................................................. 11

Table 2. Am29DL640D Sector Architecture ....................................11

Table 3. Bank Address ....................................................................14

Secured Silicon Sector Addresses............................. 14

DQ2: Toggle Bit II ................................................................... 31

Reading Toggle Bits DQ6/DQ2 ............................................... 31

DQ5: Exceeded Timing Limits ................................................ 31

DQ3: Sector Erase Timer ....................................................... 31

Table 13. Write Operation Status ................................................... 32

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33

Figure 8. Maximum Negative Overshoot Waveform ...................... 33

Figure 9. Maximum Positive Overshoot Waveform........................ 33

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 33

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 10. I

CC1

Current vs. Time (Showing Active and

Automatic Sleep Currents) ............................................................. 35

Figure 11. Typical I

CC1

vs. Frequency ............................................ 35

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 12. Test Setup.................................................................... 36

Autoselect Mode ................................................... 14

Table 5. Am29DL640D Autoselect Codes, (High Voltage Method) 15

KEY TO SWITCHING WAVEFORMS . . . . . . . . . . 36

Figure 13. Input Waveforms and Measurement Levels ................. 36

Sector/Sector Block Protection and Unprotection 16

Table 6. Am29DL640D Boot Sector/Sector Block Addresses for Pro-

tection/Unprotection ........................................................................16

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37

Read-Only Operations ........................................................... 37

Figure 14. Read Operation Timings ............................................... 37

Write Protect (WP#) ................................................................ 17

Table 7. WP#/ACC Modes ..............................................................17

Hardware Reset (RESET#) .................................................... 38

Figure 15. Reset Timings ............................................................... 38

Temporary Sector Unprotect .................................................. 17

Figure 1. Temporary Sector Unprotect Operation........................... 17

Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 18

Word/Byte Configuration (BYTE#) .......................................... 39

Figure 16. BYTE# Timings for Read Operations............................ 39

Figure 17. BYTE# Timings for Write Operations............................ 39

Secured Silicon Sector

Flash Memory Region ............................................................ 19

Figure 3. Secured Silicon Sector Protect Verify .............................. 20

Erase and Program Operations .............................................. 40

Figure 18. Program Operation Timings..........................................

Figure 19. Accelerated Program Timing Diagram..........................

Figure 20. Chip/Sector Erase Operation Timings ..........................

Figure 21. Back-to-back Read/Write Cycle Timings ......................

Figure 22. Data# Polling Timings (During Embedded Algorithms).

Figure 23. Toggle Bit Timings (During Embedded Algorithms)......

Figure 24. DQ2 vs. DQ6.................................................................

Hardware Data Protection ...................................................... 20

Low VCC Write Inhibit ............................................................ 20

Write Pulse “Glitch” Protection ............................................... 20

Logical Inhibit .......................................................................... 20

Power-Up Write Inhibit ............................................................ 20

Common Flash Memory Interface (CFI) . . . . . . . 20

Table 8. CFI Query Identification String ......................

System Interface String...............................................

Table 10. Device Geometry Definition ........................

Table 11. Primary Vendor-Specific Extended Query ..

Temporary Sector Unprotect .................................................. 45

Figure 25. Temporary Sector Unprotect Timing Diagram .............. 45

Figure 26. Sector/Sector Block Protect and

Unprotect Timing Diagram ............................................................. 46

Command Definitions . . . . . . . . . . . . . . . . . . . . . . 24

Reading Array Data ................................................................ 24

Reset Command ..................................................................... 24

Autoselect Command Sequence ............................................ 24

Enter/Exit Secured Silicon Sector

Command Sequence .............................................................. 24

Byte/Word Program Command Sequence ............................. 25

Unlock Bypass Command Sequence ..................................... 25

Figure 4. Program Operation .......................................................... 26

Alternate CE# Controlled Erase and Program Operations ..... 47

Figure 27. Alternate CE# Controlled Write (Erase/Program)

Operation Timings.......................................................................... 48

Chip Erase Command Sequence ........................................... 26

Sector Erase Command Sequence ........................................ 26

Erase Suspend/Erase Resume Commands ........................... 27

Figure 5. Erase Operation............................................................... 27

Table 12. Am29DL640D Command Definitions .......... 28

Erase And Programming Performance . . . . . . . 49

Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 49

TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 49

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 50

FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA)

12 x 11 mm package .............................................................. 50

TS 048—48-Pin Standard TSOP ............................................ 51

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 52

December 13, 2005

Am29DL640D

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