Am29DS323D
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not recommended for designs. Please contact a Spansion repre-
sentative for alternates.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
23480
Revision A
Amendment
5
Issue Date
October 10, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29DS323D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
This product has been retired and is not recommended for designs. Please contact a Spansion representative for alternates.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
■
Multiple bank architectures
— Two devices available with different bank sizes (refer
to Table 3)
■
Secured Silicon (Secured Silicon) Sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable:
Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
— 64 Kbyte sector size
■
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
■
Package options
— 48-ball FBGA
— 48-pin TSOP
■
Top or bottom boot block
■
Manufactured on 0.23 µm process technology
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■
High performance
— Access time as fast 110 ns
— Program time: 13 µs/word typical;
with Accelerate function, 7 µs/word typical
■
Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
Minimum 1 million write cycles guaranteed per sector
■
20 Year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Eases sector erase limitations
■
Supports Common Flash Memory Interface (CFI)
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■
Any combination of sectors can be erased
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
■
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function provides accelerated
program times
■
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
23480
Rev:
A
Amendment:
5
Issue Date:
October 10, 2006
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29DS323D family consists of 32 megabit, 1.8
volt-only flash memor y devices, organ ized a s
2,097,152 words of 16 bits each or 4,194,304 bytes of
8 bits each. Word mode data appears on DQ0–DQ15;
byte mode data appears on DQ0–DQ7. The device is
designed to be programmed in-system with the stan-
dard 1.8 volt V
CC
supply, and can also be programmed
in standard EPROM programmers.
The device is available with an access time of 110 and
120 ns. The devices are offered in an 48-ball FBGA
package. Standard control pins—chip enable (CE#),
write enable (WE#), and output enable (OE#)—control
normal read and write operations, and avoid bus con-
tention issues.
The device requires only a
single 1.8 volt power sup-
ply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
i s a n a d va n t a g e c o m p a r e d t o s y s t e m s w h e r e
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and
software integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard.
Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device
sta-
tus bits:
RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to reading array data.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
o r y. T h i s c a n b e a c h i ev e d i n - s y s t e m o r v i a
programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
The system can also place the device into the
standby mode.
Power consumption is greatly re-
duced in both modes.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to pro-
gram or erase in one bank, then immediately and
simultaneously read from the other bank, with zero la-
tency. This releases the system from waiting for the
completion of program or erase operations.
Am29DS323D Features
The
Secured Silicon (SecSi) Sector
is an additional
64 Kbyte sector capable of being permanently locked
by AMD or customers. The
Secured Silicon Sector
Indicator Bit
(DQ7) is permanently set to a 1 if the
part is
factory locked,
and set to a 0 if
customer
lockable.
This way, customer lockable parts can never
be used to replace a factory locked part.
Factory locked parts provide several options. The Se-
cured Silicon Sector may store a secure, random 16
byte ESN (Electronic Serial Number), customer code
(programmed through AMD’s ExpressFlash service),
or both. Customer Lockable parts may utilize the Se-
cured Silicon Sector as bonus space, reading and
writing like any other flash sector, or may permanently
lock their own code there.
DMS (Data Management Software)
allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
2
Am29DS323D
23480A5 October 10, 2006
D A T A
S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Package .................... 6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29DS323D Device Bus Operations ...............................9
Chip Erase Command Sequence ........................................... 26
Sector Erase Command Sequence ........................................ 26
Erase Suspend/Erase Resume Commands ........................... 27
Figure 4. Erase Operation.............................................................. 27
Command Definitions ............................................................. 28
Table 14. Am29DS323D Command Definitions.............................. 28
Write Operation Status . . . . . . . . . . . . . . . . . . . . 29
DQ7: Data# Polling ................................................................. 29
Figure 5. Data# Polling Algorithm .................................................. 29
Word/Byte Configuration .......................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences ............................ 10
Accelerated Program Operation ......................................................10
Autoselect Functions .......................................................................10
RY/BY#: Ready/Busy# ............................................................ 30
DQ6: Toggle Bit I .................................................................... 30
Figure 6. Toggle Bit Algorithm........................................................ 30
Simultaneous Read/Write Operations with Zero Latency ....... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 10
RESET#: Hardware Reset Pin ............................................... 11
Output Disable Mode .............................................................. 11
Table 2. Am29DS323D Device Bank Divisions ...............................11
Table 3. Top Boot Sector Addresses (Am29DS32xDT) ..................12
Table 4. Secured Silicon Sector Addresses for Top Boot Devices . 13
Table 5. Bottom Boot Sector Addresses (Am29DS32xDB) ............14
Table 6. Secured Silicon Sector Addresses for Bottom Boot Devices
15
DQ2: Toggle Bit II ................................................................... 31
Reading Toggle Bits DQ6/DQ2 ............................................... 31
DQ5: Exceeded Timing Limits ................................................ 31
DQ3: Sector Erase Timer ....................................................... 31
Table 15. Write Operation Status ................................................... 32
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33
Figure 7. Maximum Negative Overshoot Waveform ..................... 33
Figure 8. Maximum Positive Overshoot Waveform....................... 33
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 33
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 9. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 35
Figure 10. Typical I
CC1
vs. Frequency ............................................ 35
Autoselect Mode ..................................................................... 16
Table 7. Am29DS323D Autoselect Codes (High Voltage Method) 16
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 11. Test Setup.................................................................... 36
Table 16. Test Specifications ......................................................... 36
Figure 12. Input Waveforms and Measurement Levels ................. 36
Sector/Sector Block Protection and Unprotection .................. 17
Table 8. Top Boot Sector/Sector Block Addresses
for Protection/Unprotection .............................................................17
Table 9. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection ...........................................17
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 13. Read Operation Timings ............................................... 37
Figure 14. Reset Timings ............................................................... 38
Write Protect (WP#) ................................................................ 18
Temporary Sector/Sector Block Unprotect ............................. 18
Figure 1. Temporary Sector Unprotect Operation........................... 18
Figure 2. In-System Sector/Sector Block Protect
and Unprotect Algorithms................................................................ 19
Word/Byte Configuration (BYTE#) .......................................... 39
Figure 15. BYTE# Timings for Read Operations............................ 39
Figure 16. BYTE# Timings for Write Operations............................ 39
Erase and Program Operations .............................................. 40
Figure 17. Program Operation Timings..........................................
Figure 18. Accelerated Program Timing Diagram..........................
Figure 19. Chip/Sector Erase Operation Timings ..........................
Figure 20. Back-to-back Read/Write Cycle Timings ......................
Figure 21. Data# Polling Timings (During Embedded Algorithms).
Figure 22. Toggle Bit Timings (During Embedded Algorithms)......
Figure 23. DQ2 vs. DQ6.................................................................
Figure 24. Temporary Sector/Sector Block
Unprotect Timing Diagram .............................................................
Figure 25. Sector/Sector Block Protect/Unprotect Timing Diagram
Figure 26. Alternate CE# Controlled Write
(Erase/Program) Operation Timings ..............................................
41
41
42
43
44
45
45
46
47
49
Secured Silicon Sector Flash Memory Region ....................... 20
Hardware Data Protection ...................................................... 20
Low VCC Write Inhibit .....................................................................21
Write Pulse “Glitch” Protection ........................................................21
Logical Inhibit ..................................................................................21
Power-Up Write Inhibit ....................................................................21
Common Flash Memory Interface (CFI) . . . . . . . 21
Table 10. CFI Query Identification String ........................................ 21
Table 11. System Interface String................................................... 22
Table 12. Device Geometry Definition ............................................ 22
Table 13. Primary Vendor-Specific Extended Query ...................... 23
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data ................................................................ 24
Reset Command ..................................................................... 24
Autoselect Command Sequence ............................................ 24
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence .............................................................. 25
Byte/Word Program Command Sequence ............................. 25
Unlock Bypass Command Sequence ..............................................25
Figure 3. Program Operation .......................................................... 26
Erase And Programming Performance . . . . . . . 50
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 50
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA)
6 x 12 mm package ................................................................ 51
TS 048—48-Pin Standard TSOP ............................................ 52
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53
October 10, 2006 23480A5
Am29DS323D
3
嵌入式系统
