Am29F040B
Data Sheet
Am29F040B Cover Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
21445
Revision
E
Amendment
8
Issue Date
November 11, 2009
D at a
S hee t
This page left intentionally blank.
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Am29F040B
21445_E8 November 11, 2009
DATA SHEET
Am29F040B
4 Megabit (512 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
•
•
•
•
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F040 device
High performance
— Access times as fast as 55 ns
Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
•
Flexible sector architecture
— 8 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Sector protection:
A hardware method of locking sectors to prevent
any program or erase operations within that sector
•
Embedded Algorithms
•
•
•
•
•
•
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
Minimum 1,000,000 program/erase cycles per
sector guaranteed
20-year data retention at 125° C
— Reliable operation for the life of the system
Package options
— 32-pin PLCC or TSOP
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21445
Rev:
E
Amendment:
8
Issue Date:
November 11, 2009
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29F040B is a 4 Mbit, 5.0 volt-only Flash mem-
ory organized as 524,288 Kbytes of 8 bits each. The
512 Kbytes of data are divided into eight sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F040B is offered
in 32-pin PLCC or TSOP packages. This device is de-
signed to be programmed in-system with the standard
system 5.0 volt V
CC
supply. A 12.0 volt V
PP
is not re-
quired for write or erase operations. The device can also
be programmed in standard EPROM programmers.
This device is manufactured using AMD’s 0.32 µm pro-
cess technology, and offers all the features and
benefits of the Am29F040, which was manufactured
using 0.5 µm process technology. In addtion, the
Am29F040B has a second toggle bit, DQ2, and also of-
fers the ability to program in the Erase Suspend mode.
The standard Am29F040B offers access times of 55,
70 and 90 ns, allowing high-speed microprocessors to
operate without wait states. To eliminate bus contention
the device has separate chip enable (CE#), write en-
able (WE#) and output enable (OE#) controls.
The device requires only a
single 5.0 volt power sup-
ply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard.
Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write cy-
cles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle)
status bits.
After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The system can place the device into the
standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
2
Am29F040B
21445E8 November 11, 2009
D A T A
S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .
Device Bus Operations . . . . . . . . . . . . . . . . . . . . .
Requirements for Reading Array Data .....................................
Writing Commands/Command Sequences ..............................
Program and Erase Operation Status ......................................
Standby Mode ..........................................................................
Output Disable Mode................................................................
4
4
5
5
5
6
7
7
7
7
7
8
Reading Toggle Bits DQ6/DQ2............................................... 15
DQ5: Exceeded Timing Limits ................................................ 15
DQ3: Sector Erase Timer ....................................................... 16
Figure 4. Toggle Bit Algorithm....................................................... 16
Table 5. Write Operation Status...................................................... 17
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 18
Figure 5. Maximum Negative Overshoot Waveform ..................... 18
Figure 6. Maximum Positive Overshoot Waveform....................... 18
Table 1. Am29F040B Device Bus Operations ...................................7
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 18
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 19
TTL/NMOS Compatible .......................................................... 19
CMOS Compatible.................................................................. 19
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7. Test Setup..................................................................... 20
Table 6. Test Specifications ........................................................... 20
Table 2. Sector Addresses Table ......................................................8
Autoselect Mode....................................................................... 9
Table 3. Am29F040B Autoselect Codes (High Voltage Method) .......9
Sector Protection/Unprotection................................................. 9
Hardware Data Protection ........................................................ 9
Low V
CC
Write Inhibit ........................................................................ 9
Write Pulse “Glitch” Protection.......................................................... 9
Logical Inhibit .................................................................................... 9
Power-Up Write Inhibit ...................................................................... 9
Key to Switching Waveforms. . . . . . . . . . . . . . . . 20
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 21
Read Only Operations ............................................................ 21
Figure 8. Read Operation Timings ................................................ 22
Erase and Program Operations.............................................. 23
Figure 9. Program Operation Timings...........................................
Figure 10. Chip/Sector Erase Operation Timings .........................
Figure 11. Data# Polling Timings (During Embedded Algorithms)
Figure 12. Toggle Bit Timings (During Embedded Algorithms).....
Figure 13. DQ2 vs. DQ6................................................................
24
24
25
25
26
Command Definitions . . . . . . . . . . . . . . . . . . . . . 10
Reading Array Data ................................................................ 10
Reset Command..................................................................... 10
Autoselect Command Sequence ............................................ 10
Byte Program Command Sequence....................................... 10
Figure 1. Program Operation ......................................................... 11
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 27
Erase and Program Operations.............................................. 27
Alternate CE# Controlled Writes .................................................... 27
Figure 14. Alternate CE# Controlled Write Operation Timings ..... 28
Chip Erase Command Sequence ........................................... 11
Sector Erase Command Sequence ........................................ 11
Erase Suspend/Erase Resume Commands........................... 12
Figure 2. Erase Operation.............................................................. 12
Command Definitions ............................................................. 13
Table 4. Am29F040B Command Definitions....................................13
Write Operation Status . . . . . . . . . . . . . . . . . . . . 14
DQ7: Data# Polling................................................................. 14
Figure 3. Data# Polling Algorithm .................................................. 14
Erase and Programming Performance . . . . . . . . 29
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 29
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . 29
PLCC Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 30
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
PL 032—32-Pin Plastic Leaded Chip Carrier ......................... 31
TS 032—32-Pin Standard Thin Small Package...................... 32
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 33
DQ6: Toggle Bit I .................................................................... 15
DQ2: Toggle Bit II ................................................................... 15
November 11, 2009 21445E8
Am29F040B
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