Am29F200B
Known Good Die
Data Sheet
-XO\
7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG
0LFUR 'HYLFHV DQG )XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ
LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
)XMLWVX
Continuity of Specifications
7KHUH LV QR FKDQJH WR WKLV GDWDVKHHW DV D UHVXOW RI RIIHULQJ WKH GHYLFH DV D 6SDQVLRQ SURGXFW $Q\
FKDQJHV WKDW KDYH EHHQ PDGH DUH WKH UHVXOW RI QRUPDO GDWDVKHHW LPSURYHPHQW DQG DUH QRWHG LQ WKH
GRFXPHQW UHYLVLRQ VXPPDU\ ZKHUH VXSSRUWHG )XWXUH URXWLQH UHYLVLRQV ZLOO RFFXU ZKHQ DSSURSULDWH
DQG FKDQJHV ZLOO EH QRWHG LQ D UHYLVLRQ VXPPDU\
Continuity of Ordering Part Numbers
$0' DQG )XMLWVX FRQWLQXH WR VXSSRUW H[LVWLQJ SDUW QXPEHUV EHJLQQLQJ ZLWK $P DQG 0%0 7R RUGHU
WKHVH SURGXFWV SOHDVH XVH RQO\ WKH 2UGHULQJ 3DUW 1XPEHUV OLVWHG LQ WKLV GRFXPHQW
For More Information
3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ
PHPRU\ VROXWLRQV
QiyvphvÃIir
Ã
! !$&
à Srvv Ã
9
6rqr Ã
#
à DrÃ9hr Ã
ErÃ!&Ã!
SUPPLEMENT
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
■
Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F200A device
■
High performance
— 70, 90, or 120 ns access time
■
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1 µA typical standby current
■
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Top or bottom boot block configurations
available
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1,000,000 write/erase cycles
guaranteed
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
■
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
■
Erase Suspend/Resume
— Supports reading data from a sector not being
erased
■
Hardware RESET# pin
— Resets internal state machine to the reading
array data
■
20-year data retention at 125°C
■
Tested to datasheet specifications at
temperature
— Contact AMD for higher temperature range
devices
■
Quality and reliability levels equivalent to
standard packaged components
■
Shipped in waffle pack, surftape, and unsawn
wafer
■
500 µm die/wafer thickness
Publication#
21257
Rev:
D
Amendment/+4
Issue Date:
June 27, 2001
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F200B in Known Good Die (KGD) form is a
2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reli-
ability and quality as AMD products in packaged form.
grammed) before executing the erase operation. Dur-
ing erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6/
DQ2 (toggle)
status bits.
After a program or erase
cycle has been completed, the device is ready to read
array data or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the
standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash mem-
ory manufacturing experience to produce the highest lev-
els of quality, reliability and cost effectiveness. The device
electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunneling. The data is
programmed using hot electron injection.
Am29F200B Features
The Am29F200B is organized as 262,144 bytes of 8
bits each or 131,072 words of 16 bits each. The 8-bit
data appears on DQ0-DQ7; the 16-bit data appears on
DQ0-DQ15. This device is designed to be programmed
in-system with the standard system 5.0 Volt V
CC
supply. A 12.0 volt V
PP
is not required for program or
erase operations.
The standard Am29F200B in KGD form offers an
access time of 70, 90, or 120 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention the device has separate chip
enable (CE#), write enable (WE#), and output enable
(OE#) controls.
The device requires only a
single 5.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard.
Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already pro-
Electrical Specifications
Refer to the Am29F200B data sheet, publication number
21526, for full electrical specifications on the Am29F200B.
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Option (V
CC
= 5.0 V
±
10%)
Max access time, ns (t
ACC
)
Max CE# access time, ns (t
CE
)
Max OE# access time, ns (t
OE
)
Am29F200B KGD
-75
(V
CC
= 5.0 V
±
5%)
70
70
30
-90
90
90
35
-120
120
120
50
2
Am29F200B Known Good Die
S U P P L E M E N T
DIE PHOTOGRAPH
DIE PAD LOCATIONS
9 8 7 6 5 4 3 2 1 42 41 40 39 38
37 36
35 34
10
11
12
33
32
31
AMD logo location
1314 15 16 17 18 1920 21 22
23
24 25 2627 28 29 30
Am29F200B Known Good Die
3
S U P P L E M E N T
PAD DESCRIPTION
Pad
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
Signal
V
CC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A-1
V
SS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Pad Center (mils)
X
0.00
–6.80
–12.80
–18.60
–24.50
–30.30
–36.30
–42.10
–48.00
–55.70
–57.50
–57.50
–57.10
–51.30
–45.90
–40.00
–34.60
–28.80
–23.30
–17.40
–12.00
–2.40
9.50
30.30
35.80
41.60
47.00
52.90
58.30
64.10
64.50
64.50
64.50
55.00
47.40
41.50
35.60
29.70
23.90
18.00
12.10
6.20
Y
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
1.40
–6.50
–18.00
–124.90
–124.90
–124.90
–124.90
–124.90
–124.90
–124.60
–124.90
–124.90
–128.60
–128.60
–124.90
–124.90
–124.90
–124.90
–124.90
–124.90
–124.90
–18.00
–6.50
3.80
2.30
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
Pad Center (millimeters)
X
Y
0.0000
0.0000
–0.1727
0.0000
–0.3251
0.0000
–0.4724
0.0000
–0.6223
0.0000
–0.7696
0.0000
–0.9220
0.0000
–1.0693
0.0000
–1.2192
0.0000
–1.4148
0.0356
–1.4605
–0.1651
–1.4605
–0.4572
–1.4503
–3.1725
–1.3030
–3.1725
–1.1659
–3.1725
–1.0160
–3.1725
–0.8788
–3.1725
–0.7315
–3.1725
–0.5918
–3.1648
–0.4420
–3.1725
–0.3048
–3.1725
–0.0610
–3.2664
0.2413
–3.2664
0.7696
–3.1725
0.9093
–3.1725
1.0566
–3.1725
1.1938
–3.1725
1.3437
–3.1725
1.4808
–3.1725
1.6281
–3.1725
1.6383
–0.4572
1.6383
–0.1651
1.6383
0.0965
1.3970
0.0584
1.2040
0.0000
1.0541
0.0000
0.9042
0.0000
0.7544
0.0000
0.6071
0.0000
0.4572
0.0000
0.3073
0.0000
0.1575
0.0000
Note:
The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
4
Am29F200B Known Good Die
综合技术交流
