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AM29LV320DT120WMI

2M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M × 16 FLASH 3V 可编程只读存储器, 90 ns, PDSO48

器件类别:存储    存储   

厂商名称:AMD(超微)

厂商官网:http://www.amd.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
BGA
包装说明
TFBGA, BGA48,6X8,32
针数
48
Reach Compliance Code
unknow
ECCN代码
3A991.B.1.A
最长访问时间
120 ns
备用内存宽度
8
启动块
TOP
命令用户界面
YES
通用闪存接口
YES
数据轮询
YES
JESD-30 代码
R-PBGA-B48
JESD-609代码
e0
长度
12 mm
内存密度
33554432 bi
内存集成电路类型
FLASH
内存宽度
16
功能数量
1
部门数/规模
8,63
端子数量
48
字数
2097152 words
字数代码
2000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
2MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装等效代码
BGA48,6X8,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行
PARALLEL
电源
3/3.3 V
编程电压
3 V
认证状态
Not Qualified
就绪/忙碌
YES
座面最大高度
1.2 mm
部门规模
8K,64K
最大待机电流
0.000005 A
最大压摆率
0.03 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
切换位
YES
类型
NOR TYPE
宽度
6 mm
Base Number Matches
1
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Am29LV320D
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not available for designs. For new and current designs,
S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please refer
to the S29AL032D datasheet for specifications and ordering information. Availability of this docu-
ment is retained for reference and historical purposes only.
April 2005
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that
originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appro-
priate, and changes will be noted in a revision summary.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number
23579
Revision
C
Amendment
8
Issue Date
December 14, 2005
THIS PAGE LEFT INTENTIONALLY BLANK.
Am29LV320D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
This product has been retired and is not available for designs. For new and current designs, S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please
refer to the S29AL032D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Secured Silicon
— 64 Kbyte Sector Size; Replacement/substitute
devices (such as Mirrorbit
) have 256 bytes.
Factory locked and identifiable:
16 bytes (8 words)
available for secure, random factory Electronic Serial
Number; verifiable as factory locked through
autoselect function. ExpressFlash option allows
entire sector to be available for factory-secured data
Customer lockable:
Can be programmed once and
then permanently locked after being shipped from
AMD
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
Package options
— 48-pin TSOP
— 48-ball FBGA
Sector Architecture
— Eight 8 Kbyte sectors
— Sixty-three 64 Kbyte sectors
Top or bottom boot block
Manufactured on 0.23 µm process technology
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast 90 ns
— Program time: 7µs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per
sector
20 Year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
non-suspended sectors
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function provides accelerated
program times
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
23579
Rev:
C
Amendment/8
Issue Date:
December 14, 2005
Refer to AMD’s Website (www.amd.com) for the latest information.
D A T A S H E E T
GENERAL DESCRIPTION
The Am29LV320D is a 32 megabit, 3.0 volt-only flash
memory device, organized as 2,097,152 words of 16
bits each or 4,194,304 bytes of 8 bits each. Word
mode data appears on DQ0–DQ15; byte mode data
appears on DQ0–DQ7. The device is designed to be
programmed in-system with the standard 3.0 volt V
CC
supply, and can also be programmed in standard
EPROM programmers.
The device is available with an access time of 90 or
120 ns. The devices are offered in 48-pin TSOP and
48-ball FBGA packages. Standard control pins—chip
enable (CE#), write enable (WE#), and output enable
(OE#)—control normal read and write operations, and
avoid bus contention issues.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
or both. Customer Lockable parts may utilize the Se-
cured Silicon sector as bonus space, reading and writ-
ing like any other flash sector, or may permanently
lock their own code there.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard.
Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device
sta-
tus bits:
RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
is completed, the device automatically returns to the
read mode.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The device offers two power-saving features. When
addresses are stable for a specified amount of time,
the device enters the
automatic sleep mode.
The
system can also place the device into the
standby
mode.
Power consumption is greatly reduced in both
modes.
Am29LV320D Features
The
Secured Silicon sector
is an extra sector capa-
ble of being permanently locked by AMD or custom-
ers. The
Secured Silicon Indicator Bit
(DQ7) is
permanently set to a 1 if the part is
factory locked,
and set to a 0 if
customer lockable.
This way, cus-
tomer lockable parts can never be used to replace a
factory locked part.
Note that the Am29LV320D has
a Secured Silicon sector size of 64 Kbytes. AMD
devices designated as replacements or substi-
tutes, such as the Am29LV320M, have 256 bytes.
This should be considered during system design.
Factory locked parts provide several options. The Se-
cured Silicon sector may store a secure, random 16
byte ESN (Electronic Serial Number), customer code
(programmed through AMD’s ExpressFlash service),
2
Am29LV320D
December 14, 2005
D A T A S H E E T
TABLE OF CONTENTS
Continuity of Specifications ....................................................... i
For More Information ................................................................. i
Distinctive Characteristics . . . . . . . . . . . . . . . . . . 1
ARCHITECTURAL ADVANTAGES ...................................... 1
PERFORMANCE CHARACTERISTICS ............................... 1
SOFTWARE FEATURES ..................................................... 1
HARDWARE FEATURES .................................................... 1
General Description . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 6
Special Package Handling Instructions .................................... 7
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Am29LV320D Device Bus Operations ..............................10
Reset Command ..................................................................... 25
Autoselect Command Sequence ............................................ 25
Table 13. Autoselect Codes ........................................................... 25
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence .............................................................. 25
Byte/Word Program Command Sequence ............................. 26
Unlock Bypass Command Sequence .................................. 26
Figure 4. Program Operation ......................................................... 27
Chip Erase Command Sequence ........................................... 27
Sector Erase Command Sequence ........................................ 27
Erase Suspend/Erase Resume Commands ........................... 28
Figure 5. Erase Operation.............................................................. 28
Command Definitions ............................................................. 29
Table 14. Am29LV320D Command Definitions ............................. 29
Write Operation Status . . . . . . . . . . . . . . . . . . . . 30
DQ7: Data# Polling ................................................................. 30
Figure 6. Data# Polling Algorithm .................................................. 30
Word/Byte Configuration ........................................................ 11
Requirements for Reading Array Data ................................... 11
Writing Commands/Command Sequences ............................ 11
Accelerated Program Operation .......................................... 11
Autoselect Functions ........................................................... 11
Standby Mode ........................................................................ 12
Automatic Sleep Mode ........................................................... 12
RESET#: Hardware Reset Pin ............................................... 12
Output Disable Mode .............................................................. 12
Table 2. Top Boot Sector Addresses (Am29LV320DT) ..................13
Table 3. Top Boot Secured Silicon Sector Addresses ................... 14
Table 4. Bottom Boot Sector Addresses (Am29LV320DB) .............14
Table 5. Bottom Boot Secured Silicon Sector Addresses .............. 15
RY/BY#: Ready/Busy# ............................................................ 31
DQ6: Toggle Bit I .................................................................... 31
Figure 7. Toggle Bit Algorithm........................................................ 31
DQ2: Toggle Bit II ................................................................... 31
Reading Toggle Bits DQ6/DQ2 ............................................... 32
DQ5: Exceeded Timing Limits ................................................ 32
DQ3: Sector Erase Timer ....................................................... 32
Table 15. Write Operation Status ................................................... 33
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 34
Figure 8. Maximum Negative Overshoot Waveform ...................... 34
Figure 9. Maximum Positive Overshoot Waveform........................ 34
Autoselect Mode ..................................................................... 16
Table 6. Autoselect Codes (High Voltage Method) ........................16
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 34
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 35
CMOS Compatible .................................................................. 35
Zero-Power Flash ................................................................. 36
Figure 10. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 36
Figure 11. Typical I
CC1
vs. Frequency ............................................ 36
Sector/Sector Block Protection and Unprotection .................. 17
Table 7. Top Boot Sector/Sector Block Addresses
for Protection/Unprotection .............................................................17
Table 8. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection ...........................................17
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 12. Test Setup.................................................................... 37
Table 16. Test Specifications ......................................................... 37
Figure 13. Input Waveforms and Measurement Levels ................. 37
Write Protect (WP#) ................................................................ 18
Temporary Sector Unprotect .................................................. 18
Figure 1. Temporary Sector Unprotect Operation........................... 18
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 19
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38
Read-Only Operations ........................................................... 38
Figure 14. Read Operation Timings ............................................... 38
Secured Silicon Sector Flash Memory Region ....................... 20
Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory ............................................... 20
Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected at the Factory .................................................. 20
Figure 3. Secured Silicon Sector Protect Verify .............................. 21
Hardware Reset (RESET#) .................................................... 39
Figure 15. Reset Timings ............................................................... 39
Word/Byte Configuration (BYTE#) ............................................. 40
Figure 16. BYTE# Timings for Read Operations............................ 40
Figure 17. BYTE# Timings for Write Operations............................ 40
Hardware Data Protection ...................................................... 21
Low VCC Write Inhibit ......................................................... 21
Write Pulse “Glitch” Protection ............................................ 21
Logical Inhibit ...................................................................... 21
Power-Up Write Inhibit ......................................................... 21
Common Flash Memory Interface (CFI) . . . . . . . 21
Table 9. CFI Query Identification String .......................................... 22
Table 10. System Interface String................................................... 22
Table 11. Device Geometry Definition ............................................ 23
Table 12. Primary Vendor-Specific Extended Query ...................... 24
Erase and Program Operations ................................................. 41
Figure 18. Program Operation Timings..........................................
Figure 19. Chip/Sector Erase Operation Timings ..........................
Figure 20. Data# Polling Timings (During Embedded Algorithms).
Figure 21. Toggle Bit Timings (During Embedded Algorithms)......
Figure 22. DQ2 vs. DQ6.................................................................
42
43
44
45
45
Temporary Sector Unprotect ..................................................... 46
Figure 23. Temporary Sector Unprotect Timing Diagram .............. 46
Figure 24. Accelerated Program Timing Diagram.......................... 46
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 47
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25
Reading Array Data ................................................................ 25
December 14, 2005
Alternate CE# Controlled Erase and Program Operations ........ 48
Figure 26. Alternate CE# Controlled Write
Am29LV320D
3
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