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Am29LV641MH/L

Data Sheet

RETIRED

PRODUCT

This product has been retired and is not available for designs. For new and current designs,

S29GL064A supersedes Am29LV641M H/L and is the factory-recommended migration path. Please

refer to the S29GL064A datasheet for specifications and ordering information. Availability of this

document is retained for reference and historical purposes only.

April 2005

The following document specifies Spansion memory products that are now offered by both Advanced

Micro Devices and Fujitsu. Although the document is marked with the name of the company that

originally developed the specification, these products will be offered to customers of both AMD and

Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a Spansion product. Any

changes that have been made are the result of normal datasheet improvement and are noted in the

document revision summary, where supported. Future routine revisions will occur when appro-

priate, and changes will be noted in a revision summary.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about Spansion

memory solutions.

Publication Number

25261

Revision

Amendment

+10

Issue Date

December 21, 2005

THIS PAGE LEFT INTENTIONALLY BLANK.

Am29LV641MH/L

64 Megabit (4 M x 16-Bit) MirrorBit™ 3.0 Volt-only

Uniform Sector Flash Memory with VersatileI/O™ Control

DISTINCTIVE CHARACTERISTICS

information. Availability of this document is retained for reference and historical purposes only.

Please refer to the S29GL064A datasheet for specifications and ordering

ARCHITECTURAL ADVANTAGES

Single power supply operation

— 3 V for read, erase, and program operations

VersatileI/O™ control

— Device generates data output voltages and tolerates

data input voltages on CE# and the DQ inputs/outputs

as determined by the voltage on the V

pin; operates

from 1.65 to 3.6 V

Manufactured on 0.23 µm MirrorBit process

technology

SecSi™ (Secured Silicon) Sector region

— 128-word sector for permanent, secure identification

through an 8-word random Electronic Serial Number,

accessible through a command sequence

— May be programmed and locked at the factory or by

the customer

Flexible sector architecture

— One hundred twenty-eight 32 Kword sectors

Compatibility with JEDEC standards

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

Minimum 100,000 erase cycle guarantee per sector

20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS

High performance

— 90 ns access time

— 25 ns page read times

— 0.5 s typical sector erase time

— 22 µs typical effective write buffer word programming

time: 16-word write buffer reduces overall

programming time for multiple-word updates

— 4-word page read buffer

— 16-word write buffer

This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV641M H/L and is the factory-recommended migration path.

Low power consumption (typical values at 3.0 V, 5

MHz)

— 30 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

Package options

— 48-pin TSOP

SOFTWARE & HARDWARE FEATURES

Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall

multiple-word programming time

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

Hardware features

— Sector Group Protection: hardware-level method of

preventing write operations within a sector group

— Temporary Sector Unprotect: V

-level method of

changing code in locked sectors

— ACC (high voltage) input accelerates programming

time for higher throughput during system production

— Write Protect input (WP#) protects first or last sector

regardless of sector protection settings

— Hardware reset input (RESET#) resets device

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication#

25261

Amendment/+10

Rev:

Issue Date:

December 21, 2005

Refer to AMD’s Website (www.amd.com) for the latest information.

D A T A S H E E T

GENERAL DESCRIPTION

The Am29LV641MH/L is a 64 Mbit, 3.0 volt single

power supply flash memory devices organized as

4,194,304 words. The devices have a 16-bit wide data

bus, and can be programmed either in the host system

or in standard EPROM programmers.

An access time of 90, 100, 110, or 120 ns is available.

Note that each access time has a specific operating

voltage range (V

) and an I/O voltage range (V

), as

specified in the

Product Selector Guide

and the

Order-

ing Information

sections. The device is offered in a

48-pin TSOP package. Each device has separate chip

enable (CE#), write enable (WE#) and output enable

(OE#) controls.

Each device requires only a

single 3.0 volt power

supply

for both read and write functions. In addition to

a V

input, a high-voltage

accelerated program

(ACC)

input provides shorter programming times

through increased current. This feature is intended to

facilitate factory throughput during system production,

but may also be used in the field if desired.

The device is entirely command set compatible with

the

JEDEC single-power-supply Flash standard.

Commands are written to the device using standard

microprocessor write timing. Write cycles also inter-

nally latch addresses and data needed for the pro-

gramming and erase operations.

The

sector erase architecture

allows memory sec-

tors to be erased and reprogrammed without affecting

the data contents of other sectors. The device is fully

erased when shipped from the factory.

Device programming and erasure are initiated through

command sequences. Once a program or erase oper-

ation has begun, the host system need only poll the

DQ7 (Data# Polling) or DQ6 (toggle)

status bits

to de-

termine whether the operation is complete. To facilitate

programming, an

Unlock Bypass

mode reduces com-

mand sequence overhead by requiring only two write

cycles to program data instead of four.

The

VersatileI/O™

) control allows the host sys-

tem to set the voltage levels that the device generates

and tolerates on the CE# control input and DQ I/Os to

the same voltage level that is asserted on the V

pin.

Refer to the

Ordering Information

section for valid V

options.

Hardware data protection

measures include a low

detector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of sectors of memory.

This can be achieved in-system or via programming

equipment.

The

Erase Suspend/Erase Resume

feature allows

the host system to pause an erase operation in a given

sector to read or program any other sector and then

complete the erase operation. The

Program Sus-

pend/Program Resume

feature enables the host sys-

tem to pause a program operation in a given sector to

read any other sector and then complete the program

operation.

The

hardware RESET# pin

terminates any operation

in progress and resets the device, after which it is then

ready for a new operation. The RESET# pin may be

tied to the system reset circuitry. A system reset would

thus also reset the device, enabling the host system to

read boot-up firmware from the Flash memory device.

The device reduces power consumption in the

standby mode

when it detects specific voltage levels

on CE# and RESET#, or when addresses have been

stable for a specified period of time.

The

SecSi™ (Secured Silicon) Sector

provides a

128-word area for code or data that can be perma-

nently protected. Once this sector is protected, no fur-

ther changes within the sector can occur.

The

Write Protect (WP#)

feature protects the first or

last sector by asserting a logic low on the WP# pin.

The protected sector will still be protected even during

accelerated programming.

AMD MirrorBit flash technology combines years of

Flash memory manufacturing experience to produce

the highest levels of quality, reliability and cost effec-

tiveness. The device electrically erases all bits within a

sector simultaneously via hot-hole assisted erase. The

data is programmed using hot electron injection.

Am29LV641MH/L

December 21, 2005

D A T A S H E E T

MIRRORBIT 64 MBIT DEVICE FAMILY

Device

LV065MU

LV640MT/B

LV640MH/L

LV641MH/L

LV640MU

Bus

x8/x16

x16

Sector Architecture

Uniform (64K-byte)

Boot (8x8K-byte

@ top & bottom)

Uniform (64K-byte)

Uniform (32K-word)

Packages

48-pin TSOP (std. & rev. pinout),

63-ball FBGA

48-pin TSOP, 63-ball Fine-pitch BGA,

64-ball Fortified BGA

56-pin TSOP (std. & rev. pinout),

64 Fortified BGA

48-pin TSOP (std. & rev. pinout)

63-ball Fine-pitch BGA,

64 Ball Fortified BGA

Yes

RY/BY#

Yes

WP#, ACC

ACC only

WP#/ACC pin

Separate WP#

and ACC pins

ACC only

WP# Protection

No WP#

2 x 8 Kbyte top

or bottom

1 x 64 Kbyte

high or low

1 x 32 Kword top

or bottom

No WP#