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AM55-0001TR

Narrow Band Medium Power Amplifier, 2400MHz Min, 2500MHz Max, PLASTIC, SSOP-24

器件类别:无线/射频/通信    射频和微波   

厂商名称:MACOM

厂商官网:http://www.macom.com

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器件参数
参数名称
属性值
厂商名称
MACOM
Reach Compliance Code
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Preliminary Specifications
140 mW Power Amplifier with T/R and Diversity Switches
AM55-0001
2.4 - 2.5 GHz
Features
q
q
q
q
SSOP-24
+.0025
.0275 -.0025
+0,06
0,7
-0,06
+.0037
.340 -.0041
+0,09
8,64 -0,1
q
Highly Integrated PA/Attenuator and T/R Switch
Low Current Consumption: 120 mA Typ.
Switch and Attenuator Controls CMOS Compatible
High Power (140 mW) and Low Power (16 mW)
Transmit Power Control
+5 V/-5 V Fixed Supply Voltages
.236±.008
5,99
±0,2
+.0034
.1540 -.0043
+0,09
3,91 -0,11
Description
M/A-COM’s AM55-0001 is a GaAs power amplifier with
integrated transmit/receive and an antenna diversity switch
in a low cost SSOP 24 plastic package. The AM55-0001
employs active bias circuits that eliminate the need for
external bias adjustment. A ‘Sleep Mode’ is incorporated
which turns off current draw from the positive supply of
the PA during receive mode. The AM55-0001 provides a
10-dB step attenuator for use as a transmit power controller.
The AM55-0001 is designed for low power consumption
and is ideally suited for FSK systems in the 2.4 - 2.5 GHz
bands (North American ISM, Japanese RCR.32 and
European ETSI). Typical applications include WLAN and
wireless portable data collection.
This amplifier is also available without diversity switching
(AM55-0007). Either power amplifier can be combined
with a transceiver IC (MD58-0001) to form a complete RF
front end.
M/A-COM's AM55-0001 is fabricated using a mature
0.5-micron gate length GaAs process. The process features
full passivation for increased performance and reliability.
PIN 1
.057
±.003
1,45
±0,08
.015(0,38) x 45°
0-8°
.004(0,10)
.007±.003
0,18
±0,08
.025
0,64
+.004
.010 -.001
0,25 +0,1
-0,03
+.022
.028 -.013
+0,56
0,71
-0,33
.008 +.0018
-.0005
0,2 +0,05
-0,01
Dimensions are in inches over millemeters.
Ordering Information
Part Number
AM55-0001
AM55-0001TR
AM55-0001RTR
AM55-0001SMB
Description
SSOP 24-Lead Plastic Package
Forward Tape & Reel
*
Reverse Tape & Reel
*
Designer’s Kit
*
If specific reel size is required, consult factory for part
number assignment.
Typical Electrical Specifications
Test Conditions: Frequency: 2.45 GHz, V
DD
= 5 V ±5%, V
GG
= - 5 V ±5%, T
A
= +25°C
Parameter
Power Amplifier
Linear Gain
VSWR In/Out
Output Power
Second Harmonic
Third Harmonic
I
DD
(V
DD1
+ V
DD2
+ V
DD
PA)
T/R and Diversity Switches
Insertion Loss
Isolation
VSWR In/Out
Specifications Subject to Change Without Notice
Test Conditions
High Power Mode
Low Power Mode
Both Modes
High Power Mode
Low Power Mode
High Power Mode
Units
dB
dB
dBm
dBm
dBc
dBc
mA
dB
dB
Min.
23
12
19
8
Typ.
26.5
16
1.5:1
21.5
12
-25
-17
120
1.2
15
1.5:1
Max.
P = -3 dBm
IN
P
IN
= -3 dBm
200
10
V2.00
1
140 mW Power Amplifier with T/R and Diversity Switches
Absolute Maximum Ratings
Parameter
Max. Input Power
2
Operating Voltages
2,3
Operating Temperature
Storage Temperature
1
AM55- 0001
Truth Table
ANT
CTRL
X
X
X
X
0
1
Control Line
ATTN
T/R
CTRL
CTRL
X
1
0
0
1
0
X
1
X
X
X
X
SLEEP
CTRL
*
-5 V
0V
0V
-5 V
X
X
Operating
Mode
Receive
High Power
Low Power
Sleep Mode
ANT 1
ANT 2
Absolute Maximum
+23 dBm
V
DD
= 8 V
V
GG
= -8 V
-40°C to +85°C
-65°C to +150°C
1. Exceeding these limits may cause permanent damage.
2. Ambient temperature ( T
A
) = +25°C
3. |V
DD
| + |V
GG
| not to exceed 12 volts.
Pin Configuration
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Pin Name
V
GG
T/R CTRL
Rx OUT
GND
PA OUT
V
DD
PA
GND
ATTN CTRL
GND
GND
ANT 2
ANT 1
GND
ANT CTRL
GND
V
DD2
GND
V
DD1
Description
Negative voltage to all active
bias networks
0 V for transmit mode, +5 V for
receive mode
Output of T/R switch for receive mode
DC and RF Ground
Output of T/R switch for transmit mode
V
DD
for output stage of PA, V
DD
for
active bias circuit of output stage
DC and RF Ground
0 V for high power mode, +5 V for low
power mode
DC and RF Ground
DC and RF Ground
Output #2 of diversity switch
Output #1 of diversity switch
DC and RF Ground
0 V for ANT Common to ANT 1, +5 V
for ANT Common to ANT 2
DC and RF Ground
V
DD
for both diversity and T/R
switches, V
DD
for second stage of PA
DC and RF Ground
V
DD
for first stage of PA, V
DD
of
active bias for the first and second
stage of PA
DC and RF Ground
DC and RF Ground
RF input to PA
DC and RF Ground
0 V PA "on" mode, -5 V PA "sleep"
mode. Sleep mode shuts off active
bias and "pinches off" all PA FETs.
X - Don’t Care
“0” = 0 V to 0.2 V @ 100 µA
“1” = V
DD
to V
DD
-0.2 V @ 200 µA
levels between 0 V
*
Control voltagecontrol line. (Pin 24) and V
GG
must be used on
SLEEP CTRL
Functional Diagram and Pin Configuration
1
V
GG
T/R CTRL
Rx OUT
GND
PA OUT
V
DD
PA
GND
ATTN CTRL
GND
ANT COMMON
GND
ANT 2
24
SLEEP CTRL
GND
PA IN
GND
GND
V
DD1
GND
V
DD2
GND
ANT CTRL
GND
ANT 1
ANT COMMON Common port of diversity switch
12
13
20
21
22
23
24
GND
GND
PA IN
GND
SLEEP CTRL
Specifications Subject to Change Without Notice
V 2.00
2
14 0 mW Power Amplifier with T/R and Diversity Switches
AM55-0001
Small Signal Power Amplifier
1
LINEAR GAIN
30
-20°C
26
GAIN (dB)
+25°C
22
18
+70°C
14
2.0
2.2
2.4
2.6
2.8
3.0
FREQUENCY (GHz)
GAIN (dB)
28
26
24
22
20
18
2.0
2.2
2.4
±4.0 V
2.6
2.8
3.0
± 6.0 V
LINEAR GAIN vs V
DD
, V
GG
FREQUENCY (GHz)
INPUT MATCH
0
RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
2.0
2.2
2.4
+70°C
-20°C
+25°C
RETURN LOSS (dB)
0
-4
-8
-12
-16
OUTPUT MATCH
-20°C
+70°C
+25°C
2.6
2.8
3.0
2.0
2.2
2.4
2.6
2.8
3.0
FREQUENCY (GHz)
FREQUENCY (GHz)
T/R Switch Small Signal Performance
1
INSERTION LOSS & ISOLATION
INSERTION LOSS (dB)
0
-1
-2
-3
-4
-5
2.0
2.2
2.4
2.6
2.8
0
ISOLATION (dB)
-5
-10
-15
-20
-25
3.0
RETURN LOSS (dB)
0
-5
-10
-15
-20
RETURN LOSS
Input
Output
2.0
2.2
2.4
2.6
2.8
3.0
FREQUENCY (GHz)
FREQUENCY (GHz)
1. Unless otherwise noted, Frequency: 2.45 GHz, V
DD
= 5 V ±5%, V
GG
= - 5 V ±5%, T
A
= +25°C
Specifications Subject to Change Without Notice
V 2.00
3
140 mW Power Amplifier with T/R and Diversity Switches
AM55- 0001
Power Amplifier Power Performance
1
P
OUT
vs P
IN
24
22
P
OUT
(dBm)
20
18
16
14
12
10
Compression
-20°C
+25°C
+70°C
-15
-12
-9
-6
-3
0
0
-1
-2
-3
-4
-5
-6
-7
24
22
20
18
16
14
12
10
P
OUT
vs V
DD
, V
GG
±6.0 V
COMPRESSION(dB)
P
OUT
(dBm)
± 4.5 V
± 4.0 V
± 5.5 V
±5.0 V
-15
-11
-7
P
IN
(dBm)
-3
1
P
IN
(dBm)
CURRENT DRAW and POWER ADDED EFFICIENCY
25
20
PAE (%)
15
10
5
0
-1.5
-12
-9
P
IN
(dB)
+25°C
+70°C
-6
-3
0
-20°C
-20°C
+25°C
+70°C
160
POWER (dBm)
140
120
100
80
60
CURRENT (mA)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
HARMONIC LEAKAGE at ANT 1 & ANT 2
2
2nd Harmonic
3rd Harmonic
2.4
2.42
2.44
2.46
2.48
2.50
FREQUENCY (GHz)
2. Measured with an RF input power of -3 dBm at PA IN. Output
measured at ANT 1 and ANT 2 with PA OUT and ANT COMMON
terminated in 50Ω.
Diversity Switch Small Signal Performance
1
INSERTION LOSS & ISOLATION
INSERTION LOSS (dB)
0
-1
-2
-3
-4
-5
2.0
2.2
2.4
2.6
2.8
FREQUENCY (GHz)
0
ISOLATION (dB)
-5
-10
-15
-20
-25
3.0
RETURN LOSS (dB)
RETURN LOSS
0
-5
-10
-15
-20
2.0
2.2
2.4
2.6
2.8
3.0
FREQUENCY (GHz)
Input
Output
1. Unless otherwise noted, Frequency: 2.45 GHz, V
DD
= 5 V ±5%, V
GG
= - 5 V ±5%, T
A
= +25°C
Specifications Subject to Change Without Notice
V 2.00
4
14 0 mW Power Amplifier with T/R and Diversity Switches
Recommended PCB Configuration
Layout View
0.710 in.
AM55-0001
Cross-Section View
RF Traces + Components
RF Ground
C7
C3
C2
C9
DC Routing
Customer Defined
0.550 in.
C8
C4
PIN 1
C6
The PCB dielectric between RF traces and RF ground
layers should be chosen to reduce RF discontinuities
between 50
lines and package pins. M/A-COM
-
recommends an FR-4 dielectric thickness of 0.008 in.
(0.2 mm), yielding a 50
line width of 0.015 in.
-
(0.38 mm). The recommended metalization thickness is
1 oz. copper.
Shaded traces are vias to DC routing layer and traces
on DC routing layer.
C5
C1
Biasing Procedure
The AM55-0001 requires the V
GG
bias be applied prior
to
any
V
DD
bias. Permanent damage may occur if this
procedure is not followed. All FETs in the PA will
draw excessive current and damage internal circuitry.
Purpose
Bypass (GHz)
Bypass (MHz)
Bypass (kHz)
External Circuitry Parts List
Label
C1 - C4
C5 - C8
C9
Value
33 pF
1000 pF
0.01 µF
All off-chip components are low-cost surface mount components
obtainable from multiple sources. (0.020 in. x 0.040 in. or
0.030 in. x 0.050 in.)
External Circuitry
V
GG
C5
T/R CTRL
Rx OUT
PA OUT
V
DD
PA
C9
C6
C2
C1
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
SLEEP CTRL
PA IN
C4
C8
V
DD1
V
DD2
C3
C7
ANT CTRL
ANT 1
ATTN CTRL
ANT COMMON
ANT 2
Specifications Subject to Change Without Notice
V 2.00
5
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参数对比
与AM55-0001TR相近的元器件有:AM55-0001、AM55-0001RTR。描述及对比如下:
型号 AM55-0001TR AM55-0001 AM55-0001RTR
描述 Narrow Band Medium Power Amplifier, 2400MHz Min, 2500MHz Max, PLASTIC, SSOP-24 Narrow Band Medium Power Amplifier, 2400MHz Min, 2500MHz Max, PLASTIC, SSOP-24 Narrow Band Medium Power Amplifier, 2400MHz Min, 2500MHz Max, PLASTIC, SSOP-24
厂商名称 MACOM MACOM MACOM
Reach Compliance Code compli compli compliant
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