AMMP-6220
6-20 GHz Low Noise Amplifier
Data Sheet
Description
Avago’s AMMP-6220 is a high gain, low-noise ampli-
fier that operates from 6 GHz to 20 GHz. The LNA is
designed to be a easy-to-use component for any sur-
face mount PCB application. The broad and uncondi-
tionally stable performance makes this LNA ideal for
primary, sub-sequential or driver low noise gain stag-
es. Intended applications include microwave radios,
802.16, automotive radar, VSAT, and satellite receivers.
Since one part can cover several bands, the AMMP-6220
can reduce part inventory and increase volume pur-
chase options. The LNA has integrated 50
W
I/O match,
DC blocking, self-bias and choke to eliminate complex
tuning and assembly processes typically required by hy-
brid (discrete-FET) amplifiers. The package is full SMT
compatible with backside grounding and I/O to simplify
assembly.
Features
•
5x5 mm surface mount package
•
Broad Band performance 6-20 GHz
•
Low 2.5 dB typical noise figure
•
High 22 dB typical gain
•
50
W
input and output match
•
Single 3 V (55 mA) supply bias
•
100% RF test in package
Applications
•
Microwave radio systems
•
Satellite VSAT
•
WLL and MMDS loops
Functional Block Diagram
1
2
3
PIN
1
2
3
4
5
6
7
8
FUNCTION
V
d
RF
out
Package Diagram
NC
1
Vd
2
NC
3
8
100 pF
100 pF
4
RF IN
8
4
RF OUT
7
6
5
PACKAGE
BASE
GND
RF
in
7
NC
6
NC
5
NC
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A) = 40V
ESD Human Body Model (Class 1A) = 300V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note: MSL Rating = Level 2A
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form T
A
= 25°C.
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.
3. This final package part performance is verified by a functional test correlated to actual performance at one or
more frequencies.
4. Specifications are derived from measurements in a 50 W test environment. Aspects of the amplifier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
Table 1. RF Electrical Characteristics
Parameter
Small-signal Gain, Ga
Noise Figure into 50 Ω, NF
Output Power at 1dB Gain Compression, P-1dB
Third Order Intercept Point;
∆f=100MHz; Pin=-20dBm, OIP3
Input Return Loss, RLin
Output Return Loss, Rlout
Reverse Isolation, Isol
Min
Typ.
22
2.5
+10
+20
-12
-16
-45
Max
Sigma
0.5
0.2
0.8
1.1
0.3
0.7
0.5
Unit
dB
dB
dBm
dBm
dB
dB
dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Specifications
Description
Drain Supply Current, Id
Min.
Typical
55
Max.
70
Unit
mA
Comments
(Vd = 3 V, Under any RF power drive and
temperature)
Table 3. Thermal Properties
Parameter
Thermal Resistance,
qch-b
Test Conditions
Value
qch-b
= 27 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Specifications
Description
Drain Supply Voltage
Drain Current
RF Input Power (Pin)
Channel Temperature
Storage Temperature
Maximum Assembly Temperature
-65
Pin
Vd
Id
RFIN
Min.
Max.
7
100
15
+150
+150
+300
Unit
V
mA
dBm
°C
°C
°C
Comments
CW
60 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2
Selected performance plots
These measurements are in 50Ω test environment at T
A
= 25°C, Vd = 3V, Id = 55 mA. Aspects of the amplifier perfor-
mance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise
(Γopt) matching.
25
20
15
10
5
0
0
-10
-20
S21 (dB)
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
-30
-40
-50
-60
S21 (dB)
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
Figure 1. Gain.
Figure 2. Isolation.
0
0
-5
-5
-10
S11 (dB)
S22 (dB)
-10
-15
-20
-15
-25
-20
-30
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
Figure 3. Input return loss.
Figure 4. Output return loss.
4.0
3.5
3.0
NF (dB)
2.5
2.0
1.5
1.0
0.5
0
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
OP-1dB & OIP3 (dBm)
25
20
15
10
5
0
P-1dB
OIP3
6
8
10
14
12
FREQUENCY (GHz)
16
18
20
Figure 5. Noise figure.
Figure 6. Typical power, OP-1dB and OIP3.
3
Over Temperature Performance Plots
These measurements are in 50Ω test environment at T
A
= 25°C, Vd = 3V, Id = 55 mA. Aspects of the amplifier perfor-
mance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise
(Γopt) matching.
30
25
20
S21 (dB)
S12 (dB)
15
10
5
0
4
6
8
10
16
12
14
FREQUENCY (GHz)
18
+25C
-40C
+85C
20
22
-50
-60
4
6
8
10
16
14
12
FREQUENCY (GHz)
18
20
22
0
-10
-20
-30
-40
+25C
-40C
+85C
Figure 7. Gain over temperature.
Figure 8. Isolation over temperature.
0
+25C
-5
S11 (dB)
-40C
+85C
-10
S22 (dB)
0
+25C
-5
-10
-15
-20
-40C
+85C
-15
-25
-20
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
-30
4
6
8
10
16
14
12
FREQUENCY (GHz)
18
20
22
Figure 9. Input return loss over temperature.
Figure 10. Output return loss over temperature.
4.0
3.5
3.0
2.5
NF (dB)
2.0
1.5
1.0
0.5
0
6
8
10
+25C
-40C
+85C
62
+25C
60
58
Idd (mA)
56
54
52
-40C
+85C
14
12
FREQUENCY (GHz)
16
18
20
50
3.0
3.5
4.0
Vdd (V)
4.5
5.0
Figure 11. NF over temperature.
Figure 12. Bias current over temperature.
4
Over Voltage plots
These measurements are in 50Ω test environment at T
A
= 25°C, Vd = 3V, Id = 55 mA. Aspects of the amplifier perfor-
mance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise
(Γopt) matching.
25
20
15
10
3V
5
0
4V
5V
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
0
-10
-20
S12 (dB)
-30
-40
-50
-60
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
3V
4V
5V
Figure 13. Gain over Vdd.
S21 (dB)
Figure 14. Isolation over Vdd.
0
3V
-5
S11 (dB)
4V
5V
S22 (dB)
0
3V
-5
-10
-15
-20
4V
5V
-10
-15
-25
-20
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
-30
4
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
22
Figure 15. Input RL over Vdd.
Figure 16. Output return loss over temperature.
3.0
2.5
2.0
NF (dB)
1.5
1.0
0.5
0
6
8
10
12
14
FREQUENCY (GHz)
16
3V
4V
5V
18
20
25
20
OIP3 (dBm)
15
10
5
0
3V
4V
5V
6
8
10
14
16
12
FREQUENCY (GHz)
18
20
Figure 17. Noise figure over Vdd.
Figure 18. OIP3 over Vdd.
5
