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AMMP-6430-BLKG

27000 MHz - 34000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27000 MHz - 34000 MHz 射频/微波宽带功率放大器

器件类别:无线/射频/通信    射频和微波   

厂商名称:AVAGO

厂商官网:http://www.avagotech.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
AVAGO
包装说明
LCC8,.2SQ,28
Reach Compliance Code
compli
ECCN代码
3A001.B.2.D
特性阻抗
50 Ω
构造
COMPONENT
增益
16 dB
最大输入功率 (CW)
23 dBm
安装特点
SURFACE MOUNT
功能数量
1
端子数量
8
最大工作频率
34000 MHz
最小工作频率
27000 MHz
封装主体材料
PLASTIC/EPOXY
封装等效代码
LCC8,.2SQ,28
电源
5 V
射频/微波设备类型
WIDE BAND MEDIUM POWER
表面贴装
YES
文档预览
AMMP-6430
27-32 GHz 0.5W Power Amplifier in SMT Package
Data Sheet
Description
The AMMP-6430 MMIC is a broadband 1W power
amplifier in a surface mount package designed for use
in transmitters that operate in various frequency bands
between 27GHz and 32GHz. At 30GHz, it provides 29dBm
of output power (P-1dB) and 19dB of small-signal gain
from a small easy-to-use device. The device has input
and output matching circuitry for use in 50Ω environ-
ments. The AMMP-6430 also integrates a temperature
compensated RF power detection circuit that enables
power detection of 0.3V/W. DC bias is simple and the
device operates on widely available 5V for current supply
(negative voltage only needed for Vg). It is fabricated in
a PHEMT process for exceptional power and gain perfor-
mance.
Features
Wide Frequency Range 27-32GHz
Half watt output power
50 Ω match on input and output
ESD protection (50V MM, and 150V HBM)
Specifications (Vd=5V, Idsq=650mA)
Frequency range 27 to 32 GHz
Small signal Gain of 20dB
Output power @P-1 of 27dBm (Typ.)
Input/Output return-loss of -10dB
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Pin Connections (Top View)
1
2
3
8
4
Pin
1
2
3
4
5
6
7
8
Function
Vgg
Vdd
DET_O
RF_out
DET_R
Vdd
Vgg
RF_in
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
WLL and MMDS loops
Commercial grade military
Note:
1. This MMIC uses depletion mode pHEMT devices. Negative supply is
used for DC gate biasing.
7
6
5
PACKAGE
BASE
GND
Attention:
Observe Precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A): 50V
ESD Human Body Model (Class 0): 150V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
RoHS-Exemption
Please refer to Hazardous substances table on page 11.
Absolute Maximum Ratings
[1]
Symbol
V
d
V
g
I
dq
P
D
P
in
T
ch, max
T
stg
T
max
Parameters
[1]
Positive Supply Voltage
Gate Supply Voltage
Drain Current
Power Dissipation
CW Input Power
Maximum Operating Channel Temp.
Storage Case Temp.
Maximum Assembly Temp (20 sec max)
Units
V
V
mA
W
dBm
°C
°C
°C
Value
6
-3 to 0.5
700
5.5
23
+155
-65 to +155
+260
2, 3
2
4, 5
Notes
2
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85
°
C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specifications/ Physical Properties
[6]
Symbol
I
dq
V
g
R
θJC
T
ch
Parameters and Test Conditions
Drain Supply Current (Vd=5 V, Vg set for Id Typical)
Gate Supply Operating Voltage (Id(Q) = 650 (mA))
Thermal Resistance
[6]
(Channel-to-Base Plate)
Channel Temperature
Units
mA
V
°C/W
°C
Value
650
-1.1
16.8
139.6
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In this
condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.
AMMP-6430 RF Specifications
[1, 2, 3, 4]
T
A
= 25°C, V
dd
= 5.0 V, I
dq
=650 mA, V
g
= -1.1V, Z
o
=50Ω
Symbol
Freq
Gain
P
-1dB
OIP3
RL
in
RL
out
Isolation
Parameters and Test Conditions
Operational Frequency
Small-signal Gain
[3, 4]
Freq = 27 GHz
Output Power at 1dB
[3]
Gain Compression
Output Third Order Intercept Point
Input Return Loss
Output Return Loss
Reverse Isolation
Units
GHz
dB
dBm
dBm
dB
dB
dB
Minimum
27
16
26
20
27
35
10
10
43
Typical
Maximum
32
Notes:
1. Small/Large -signal data measured in packaged form on a 2.4-mm connecter based evaluation board at TA = 25°C.
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or power matching.
4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=27, 30, and 32GHz
5. The Gain and P1dB tested at 27GHz guaranteed with measurement accuracy ± 1.5 dB for gain and ±1.6dB for P1dB.
2
AMMP-6430 Typical Performance
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.)
(T
A
= 25°C, Vdd=5V, Idq=650mA, V
g
=-1.1 V, Z
in
= Z
out
= 50Ω)
30
S21[dB]
25
20
15
10
5
0
S12[dB]
-30
0
S11[dB]
-5
S22[dB]
Return Loss [dB]
S21[dB]
S12[dB]
-10
-15
-20
10
15
20
25
30
Frequency [GHz]
35
40
45
-50
-25
10
15
20
25
30
Frequency [GHz]
35
40
45
Figure 1. Typical Gain and Reverse Isolation
Figure 2. Typical Input & Output Return Loss
35
30
25
P-1, P-3 [dBm], PAE[%]
Po[dBm], and, PAE[%]
40
35
30
25
20
15
10
5
0
-5
31
32
33
34
-25
-20
-15
-10
-5
0
5
10
15
Pin [dBm]
Pout(dBm)
PAE[%]
Id(total)
1300
1200
1100
1000
900
800
700
600
500
400
20
Ids [mA]
20
15
10
5
0
P-1
PAE, @P-1
P-3
PAE, @P-3
24
25
26
27
28
29
30
Frequency[GHz]
Figure 3. Typical P-1 and PAE
Figure 4. Typical Pout, Ids, and PAE vs. Pin at Freq=30GHz
46
44
42
40
IP3[dBm]
Noise Figure [dB]
10
8
6
38
36
34
4
2
32
30
25
26
27
28
29 30
31
Frequency [GHz]
32
33
34
35
0
24
26
28
30
32
Frequency [GHz]
34
36
Figure 5. Typical IP3 (Third Order Intercept) @Pin=-20dBm
Figure 6. Typical Noise Figure
3
0.35
0.3
1
0
S22_20
-5
S22_-40
S22_85
Det_R - Det_O [V]
-10
S22[dB]
0.25
Det_R - Det_O [V]
0.2
0.15
0.1
0.05
0
5
10
15
20
Pout[dBm]
25
30
35
0.1
0.01
-15
-20
0.001
-25
15
20
25
30
Frequency[GHz]
35
40
Figure 7. Typical Detector voltage vs. Output Power @30GHz
0
S11_20
S11_-40
S11_85
Figure 8. Typical S22 over temperature
32
30
28
-5
S11[dB]
-10
P-1 [dBm]
26
24
22
20
24
26
28
30
32
Frequency [GHz]
34
36
P-1_85de g
P-1_20de g
P-1_-40deg
-15
-20
-25
15
20
25
30
35
40
Frequency[GHz]
Figure 9. Typical S11 over temperature
Figure 10. Typical P-1 over temperature
30
S21_20
S21_-40
25
S21[dB]
S21_85
20
15
10
15
20
25
30
Frequency[GHz]
35
40
Figure 11. Typical Gain over temperature
4
Typical Scattering Parameters
[1]
(T
A
= 25°C, Vdd =5 V, I
dq
= 650 mA, Z
in
= Z
out
= 50Ω)
Freq
[GHz]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
S11
dB
-0.077
-0.244
-0.507
-0.857
-1.286
-1.834
-2.497
-3.218
-3.952
-4.734
-5.372
-5.892
-6.334
-6.785
-7.246
-7.822
-8.056
-8.011
-8.003
-8.086
-10.147
-10.495
-12.051
-15.378
-16.652
-17.111
-23.026
-20.256
-14.571
-13.363
-11.814
-10.715
-10.889
-11.417
-12.098
-11.897
-11.125
-10.020
-9.222
-8.609
-8.175
-7.588
-7.587
-7.506
-7.332
Mag
0.991
0.972
0.943
0.906
0.862
0.810
0.750
0.690
0.634
0.580
0.539
0.507
0.482
0.458
0.434
0.406
0.396
0.398
0.398
0.394
0.311
0.299
0.250
0.170
0.147
0.139
0.071
0.097
0.187
0.215
0.257
0.291
0.285
0.269
0.248
0.254
0.278
0.316
0.346
0.371
0.390
0.417
0.417
0.421
0.430
Phase
-30.672
-61.135
-91.481
-121.770
-152.370
176.860
146.160
115.480
84.820
54.869
26.213
-1.577
-28.136
-52.977
-75.942
-95.873
-113.940
-130.700
-150.530
-172.380
160.910
156.560
132.580
122.010
127.100
113.670
100.620
166.160
152.630
128.640
107.980
83.770
65.105
41.069
36.792
24.365
13.967
-0.758
-16.019
-32.089
-47.230
-62.593
-78.246
-89.361
-101.290
S21
dB
-60.460
-52.134
-55.059
-62.791
-43.769
-43.125
-47.710
-50.926
-48.273
-47.156
-46.361
-49.213
-43.321
-49.276
-48.968
-50.759
-31.831
-19.650
-8.565
2.944
16.205
19.584
19.712
20.404
20.339
19.880
20.040
20.218
20.087
19.761
19.830
19.352
18.619
18.093
15.162
7.101
-0.825
-7.753
-13.812
-19.209
-24.340
-29.416
-34.254
-38.657
-43.475
Mag
0.001
0.002
0.002
0.001
0.006
0.007
0.004
0.003
0.004
0.004
0.005
0.003
0.007
0.003
0.004
0.003
0.026
0.104
0.373
1.404
6.460
9.533
9.674
10.476
10.398
9.862
10.046
10.255
10.100
9.729
9.807
9.282
8.531
8.028
5.730
2.265
0.909
0.410
0.204
0.110
0.061
0.034
0.019
0.012
0.007
Phase
156.200
7.598
-178.810
135.030
72.309
-55.096
-138.310
167.090
127.030
82.462
37.278
16.009
-18.990
-50.499
-66.480
79.915
37.293
-11.371
-65.975
-130.730
130.360
-6.027
-99.417
174.220
91.597
16.978
-54.022
-128.560
157.600
85.669
10.808
-68.718
-150.100
124.500
14.850
-75.509
-142.060
161.700
110.760
62.155
13.948
-31.372
-72.562
-112.560
-145.910
S12
dB
-81.678
-79.982
-78.816
-73.965
-66.459
-61.854
-59.371
-58.859
-51.689
-49.760
-47.391
-48.433
-47.536
-50.113
-47.510
-49.051
-53.232
-54.404
-52.389
-45.317
-44.518
-44.477
-44.466
-44.254
-44.452
-44.351
-45.333
-52.770
-49.161
-57.520
-86.823
-58.807
-62.898
-51.835
-52.719
-58.568
-57.430
-52.497
-56.625
-55.294
-56.805
-57.472
-64.193
-69.135
-60.759
Mag
8.24E-05
1.00E-04
1.15E-04
2.00E-04
4.75E-04
8.08E-04
1.08E-03
1.14E-03
2.60E-03
3.25E-03
4.27E-03
3.79E-03
4.20E-03
3.12E-03
4.21E-03
3.53E-03
2.18E-03
1.90E-03
2.40E-03
5.42E-03
5.94E-03
5.97E-03
5.98E-03
6.13E-03
5.99E-03
6.06E-03
5.41E-03
2.30E-03
3.48E-03
1.33E-03
4.56E-05
1.15E-03
7.16E-04
2.56E-03
2.31E-03
1.18E-03
1.34E-03
2.37E-03
1.47E-03
1.72E-03
1.44E-03
1.34E-03
6.17E-04
3.49E-04
9.16E-04
Phase
13.553
-1.433
-26.240
-79.414
-89.529
-141.380
-174.860
151.750
128.260
76.311
33.764
-0.070
-31.732
-62.027
-80.734
-117.620
-135.710
-136.240
-100.790
-135.360
179.470
146.120
129.370
102.170
63.925
36.998
1.733
-49.664
-75.571
15.834
-92.886
-82.154
92.036
-4.332
-115.640
-48.164
-124.980
-154.340
116.090
91.256
1.705
-87.233
-136.190
-109.180
-29.843
S22
dB
-0.075
-0.218
-0.450
-0.847
-1.465
-1.593
-2.056
-2.614
-3.234
-3.919
-4.545
-5.413
-4.738
-4.740
-5.196
-5.850
-6.891
-8.605
-11.491
-15.971
-32.906
-18.247
-18.242
-17.689
-18.009
-19.138
-23.261
-18.834
-15.869
-15.535
-14.211
-13.484
-14.452
-15.301
-12.933
-12.205
-12.066
-11.605
-11.065
-10.402
-9.889
-9.293
-8.532
-7.654
-7.062
Mag
0.991
0.975
0.949
0.907
0.845
0.832
0.789
0.740
0.689
0.637
0.593
0.536
0.580
0.579
0.550
0.510
0.452
0.371
0.266
0.159
0.023
0.122
0.122
0.130
0.126
0.110
0.069
0.114
0.161
0.167
0.195
0.212
0.189
0.172
0.226
0.245
0.249
0.263
0.280
0.302
0.320
0.343
0.374
0.414
0.444
Phase
-31.001
-61.826
-92.759
-123.780
-152.600
177.570
145.900
114.510
82.673
51.597
21.330
-7.654
-29.552
-63.489
-93.519
-122.580
-151.530
179.660
151.610
128.630
80.680
-170.070
169.400
159.240
147.290
134.330
137.140
161.640
147.670
128.380
109.870
82.184
72.563
53.869
56.976
32.346
15.583
0.967
-12.574
-26.857
-40.144
-52.531
-64.211
-77.188
-90.938
Note:
1. Data obtained from a 2.4-mm connecter based module, and this data is including connecter loss, and board loss.
5
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参数对比
与AMMP-6430-BLKG相近的元器件有:AMMP-6430、AMMP-6430-TR1G、AMMP-6430-TR2G。描述及对比如下:
型号 AMMP-6430-BLKG AMMP-6430 AMMP-6430-TR1G AMMP-6430-TR2G
描述 27000 MHz - 34000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 27000 MHz - 34000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 27000 MHz - 34000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 27000 MHz - 34000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 AVAGO AVAGO AVAGO AVAGO
包装说明 LCC8,.2SQ,28 LCC8,.2SQ,28 LCC8,.2SQ,28 LCC8,.2SQ,28
Reach Compliance Code compli compli compli compliant
特性阻抗 50 Ω 50 Ω 50 Ω 50 Ω
构造 COMPONENT COMPONENT COMPONENT COMPONENT
增益 16 dB 16 dB 16 dB 16 dB
最大输入功率 (CW) 23 dBm 23 dBm 23 dBm 23 dBm
安装特点 SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
功能数量 1 1 1 1
端子数量 8 8 8 8
最大工作频率 34000 MHz 33000 MHz 34000 MHz 34000 MHz
最小工作频率 27000 MHz 25000 MHz 27000 MHz 27000 MHz
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装等效代码 LCC8,.2SQ,28 LCC8,.2SQ,28 LCC8,.2SQ,28 LCC8,.2SQ,28
电源 5 V 5 V 5 V 5 V
射频/微波设备类型 WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
表面贴装 YES YES YES YES
ECCN代码 3A001.B.2.D - 3A001.B.2.D 3A001.B.2.D
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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