Anvo-Systems Dresden
FEATURES
• High-performance 1Mb non-volatile SRAM
• 25ns Access Time
• 10ns Output Enable Access Time
• I
CC
= 10mA typ. at 25 ns Cycle Time
• I
CC
= 2mA typ. at 250 ns Cycle Time
• Read Last Successful Written Address
• Unlimited Read/Write Endurance
• Automatic non-volatile STORE on Power Down or
Brown Out (POWERSTORE)
• Non-volatile STORE under Soft Sequence or
Hardware (HSB) Control
• Automatic RECALL to SRAM on Power Up or after
Brown Out
• Unlimited RECALL Cycles
• 100k STORE Cycles
• 100-Year non-volatile Data Retention
• 3.0V to 3.6V Power Supply
• Commercial and Industrial Temperatures
• BGA48 (6x8)
• RoHS-Compliant
ANV22AA8A
128k x 8 nvSRAM
words of 8 bits each. There are 2 separate modes of
operation: SRAM mode and non-volatile mode. In
SRAM mode, the memory operates as an ordinary
static RAM. In non-volatile operation mode, data is
transferred in parallel from SRAM to the SONOS
elements (STORE) or from all of them to SRAM
(RECALL). In non-volatile mode SRAM functions are
disabled.
The SRAM can be read and written an unlimited
number of times, while independent non-volatile data
resides in SONOS elements. Data transfers from the
SRAM to the SONOS elements take place
automatically upon power down or brown out situation
(POWERSTORE) using charge stored in a small exter-
nal capacitor.
Transfers from the SONOS elements to the SRAM
(RECALL) take place automatically on power up or
may be initiated under user control by a software
sequence. Internally, RECALL is a two step procedure.
First, the SRAM data is cleared and second, the non-
volatile information is transferred into the SRAM cells.
STORE cycles also may be initiated under user control
by a software sequence or by a single pin (HSB).
Once a STORE cycle is initiated, further input or output
are disabled until the cycle is completed.
The PowerStore function can also be enabled or
disabled by a software sequence.
With Read Last Successful Written Address it is possi-
ble to read out the 3 byte of address for data where last
WRITE was successful.
DESCRIPTION
The Anvo-Systems Dresden ANV22AA8A is a 1Mb
SRAM with a non-volatile SONOS storage element
included with each memory cell, organized as 128k
BLOCK DIAGRAM
Power Control
FLASH Array
1024 x 1024
A7
V
CC
STORE
Row Decoder
A8
A10
A9
A11
A13
A15
A12
A14
A16
V
CAP
SRAM Array
1024 x 1024
RECALL
STORE /
RECALL
Control
HSB
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Software Detect
Column I/O
Input Buffer
Column Decoder
A0 A1 A2 A3 A4 A5 A6
G
E
W
This product conforms to Anvo-Systems Dresden specifications
1
Document Control Nr. 038
September, 2018
A0 - A16
Rev 1.0
ANV22AA8A
PIN CONFIGURATION
Top View
1
A
B
C
D
E
F
G
H
NC
NC
DQ0
2
G
NC
NC
3
A0
A3
A5
NC
4
A1
A4
A6
A7
5
A2
E
NC
6
NC
NC
DQ4
VSS DQ1
DQ5 VCC
VCC DQ2 V
CAP
A16 DQ6 VSS
DQ3
NC
NC
NC
A14
A15
A13
A10
NC
W
A11
DQ7
NC
NC
HSB A12
A8
A9
PIN DESCRIPTIONS
Signal Name
Signal Description
A0 - A16
DQ0 - DQ7
E
G
W
V
CC
V
SS
V
CAP
HSB
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
Capacitor Voltage
Hardware Controlled Store/Busy
software sequence or HSB assertion and are also
automatically initiated when the power supply voltage
level of the chip falls below V
SWITCH
. RECALL opera-
tions are automatically initiated upon power up and
may also occur when the V
CC
rises above V
SWITCH
,
after a low power condition. RECALL cycles may also
be initiated by a software sequence.
Power up
When the power supply is turned on from V
SS
, Chip
Enable (E) has to follow the V
CC
voltage in accordance
with the definition of V
IH
. It must not be allowed to float,
but could be connected via a suitable pull-up resistor to
V
CC
.
The Chip Enable signal (E) is edge as well as level
sensitive. This ensures that the device becomes dese-
lected after Power-Down until V
CC
reaches V
CCmin
and
a falling edge of E from the V
IH
level has been detected
thereafter. This will start the first operation.
Device Operation
The ANV22AA8A has two separate modes of opera-
tion:
- SRAM mode and
- non-volatile mode.
The memory operates in SRAM mode as a standard
fast static RAM. Data is transferred in non-volatile
mode from SRAM to SONOS elements (STORE) or
from SONOS elements to SRAM (RECALL). In this
non-volatile mode SRAM functions are disabled.
STORE cycles may be initiated under user control via a
Document Control Nr. 038
September, 2018
Rev 1.0
2
Power On Reset
In order to prevent data corruption and inadvertent
WRITE operations during Power-up, all input signals
will be ignored and Data Outputs DQ0 - DQ7 will be in
high impedance state. Power On Reset is exited when
V
CC
reaches a stable V
CCmin
. Logical signals can
applied.
Anvo-Systems Dresden
ANV22AA8A
Power-down / Brown Out
When V
CC
drops during normal operation below
V
SWITCH
all external operations will be disabled, the
device will ignore any input signals and Data Outputs
(DQ) will be in high impedance state. Power-down
during self timed Store Operation will not corrupt data
in the memory. Write operation of the current Byte will
be completed independent from the power supply. Prior
to any STORE operation the whole data in the non-
volatile memory will be erased to allow STORE opera-
tion of new and restore of unchanged data.
to the V
CAP
pin. If the voltage on the V
CC
pin drops
below V
SWITCH
, the part will automatically disconnected
from V
CC
and initiate a STORE operation. The charged
capacitor on V
CAP
pin provides the necessary energy
for this PowerStore operation.
Figure 1 shows the proper connection of capacitors for
automatic STORE operation.
Power Supply
10kO
HSB
V
CAP
C
CAP
V
SS
Operating and Stand-by Modes
When Chip Enable (E) is Low, the device is enabled. In
Operating Mode it is consuming I
CC(OP)
. In the other
case, when Chip Enable (E) is High, the device is in
Standby Mode with the reduced Supply Current
I
CC(SB)
.
V
CC
GND
SRAM READ
The ANV22AA8A performs a READ cycle whenever E
and G are LOW and HSB and W are HIGH. The add-
ress specified on pins A0 - A16 determines which of
the 128k data bytes will be accessed. When the READ
is initiated by an address transition, the outputs will be
valid after a delay of t
cR
. If the READ is initiated by E or
G, the outputs will be valid at t
a(E)
or at t
a(G)
,
whichever is later. The data outputs will repeatedly res-
pond to address changes within the t
cR
access time wit-
hout the need for transition on any control input pins,
and will remain valid until another address change or
until E or G is brought HIGH or W or HSB is brought
LOW.
Figure 1: POWERSTORE Operation
Schematic Diagram
SRAM WRITE
A WRITE cycle is performed whenever E and W are
LOW and HSB is HIGH. The address inputs must be
stable prior to entering the WRITE cycle and must
remain stable until either E or W goes HIGH at the end
of the cycle. The data on pins DQ0 - 7 will be written
into the memory if it is valid t
su(D)
before the end of a W
controlled WRITE or t
su(D)
before the end of an E cont-
rolled WRITE.
It is recommended that G is kept HIGH during the
entire WRITE cycle to avoid data bus contention on the
common I/O lines. If G is left LOW, internal circuitry will
turn off the output buffers t
dis(W)
after W goes LOW.
Each ANV22AA8A must have its own STORE capaci-
tor. A normal high frequency bypass capacitor between
the power supply voltage V
CC
and V
SS
is expected.
In order to prevent unneeded STORE operations,
automatic STOREs as well as those initiated by exter-
nally driving HSB LOW will be ignored unless at least
one WRITE operation has taken place since the most
recent STORE cycle. Note that if HSB is driven LOW
via external circuitry and no WRITES have taken place,
the part will still be disabled until HSB is allowed to
return HIGH. Software initiated STORE cycles are per-
formed regardless of whether or not a WRITE opera-
tion has taken place.
POWERSTORE operation without the external capaci-
tor will damage the volatile and non-volatile content of
the memory.
Automatic RECALL
During power up, an automatic RECALL takes place.
At a low power condition (V
CC
< V
SWITCH
) an internal
RECALL request may be latched. As soon as power
supply voltage exceeds the sense voltage of V
SWITCH
, a
requested RECALL cycle will automatically be initiated
and will take t
RESTORE
to complete.
If the ANV22AA8A is in a WRITE state at the end of
power up RECALL, the recalled SRAM data will be
overwritten. To help avoid this situation, a 10 k
resis-
tor should be connected between W or E and power
supply voltage V
CC
.
POWERSTORE
During normal operation, the ANV22AA8A will draw
current from V
CC
and charge up a capacitor connected
Document Control Nr. 038
September, 2018
Rev 1.0
3
Software non-volatile STORE
Anvo-Systems Dresden
ANV22AA8A
The ANV22AA8A software controlled STORE cycle is
initiated by executing sequential E clocked READ cyc-
les from six specific address locations. By relying on
READ cycles only, the ANV22AA8A implements non-
volatile operation while remaining compatible with
standard 128K x 8 SRAMs. During the STORE cycle,
an erase of the previous non-volatile data is performed
first, followed by a parallel programming of all non-vola-
tile elements. Once a STORE cycle is initiated, further
inputs and outputs are disabled until the cycle is
completed.
Because a sequence of addresses is used for STORE
initiation, it is important that no other READ or WRITE
accesses intervene in the sequence or the sequence
will be aborted.
To initiate the STORE cycle the following READ
sequence must be performed:
1.
Read address
0x4E38
Valid READ
2.
Read address
0xB1C7
Valid READ
3.
Read address
0x83E0
Valid READ
4.
Read address
0x7C1F
Valid READ
5.
Read address
0x703F
Valid READ
6.
Read address
0x8FC0
Initiate STORE
Once the sixth address in the sequence has been ente-
red, the STORE cycle will commence and the chip will
be disabled. It is important that READ cycles and not
WRITE cycles are used in the sequence, although it is
not necessary that G is LOW for the sequence to be
valid. After the t
STORE
cycle time has been fulfilled, the
SRAM will again be activated for READ and WRITE
operation.
The hardware controlled STORE Busy pin (HSB) is
connected to an open drain circuit acting as both input
and output to perform two different functions. When dri-
ven LOW by the internal chip circuitry it indicates that a
STORE operation (initiated via any means) is in prog-
ress within the chip. When driven LOW by external
circuitry for longer than t
w(H)S
, the chip will conditionally
initiate a STORE operation after t
dis(H)S
.
READ and WRITE operations that are in progress
when HSB is driven LOW (either by internal or external
circuitry) will be allowed to complete before the STORE
operation is performed, in the following manner.
After HSB goes LOW, the part will continue normal
SRAM operation for t
dis(H)S
. During t
dis(H)S
, a transition
on any address or control signal will terminate SRAM
operation and cause the STORE to commence.
Note that if an SRAM WRITE is attempted after HSB
has been forced LOW, the WRITE will not occur and
the STORE operation will begin immediately.
HARDWARE-STORE-BUSY (HSB) is a high speed,
low drive capability bidirectional control line.
In order to allow a bank of ANV22AA8A’s to perform
synchronized STORE functions, the HSB pin from a
number of chips may be connected together. Each chip
contains a small internal current source to pull HSB
HIGH when it is not being driven LOW. To decrease the
sensitivity of this signal to noise generated on the PC
board, it may optionally be pulled to power supply via
an external resistor with a value such that the
combined load of the resistor and all parallel chip con-
nections does not exceed I
HSBOL
at V
OL
(see Figure 1).
Only if HSB is to be connected to external circuits, an
external pull-up resistor should be used.
During any STORE operation, regardless of how it was
initiated, the ANV22AA8A will continue to drive the
HSB pin LOW, releasing it only when the STORE is
complete.
Upon completion of a STORE operation, the part will
be disabled until HSB actually goes HIGH.
Hardware Protection
Software non-volatile RECALL
A RECALL cycle is initiated with a sequence of E clok-
ked READ operations in a manner similar to the
STORE initiation. To initiate the RECALL cycle the
following sequence of READ operations must be per-
formed:
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
Valid READ
Valid READ
Valid READ
Valid READ
Valid READ
Initiate RECALL
The ANV22AA8A offers hardware protection against
inadvertent STORE operation during low voltage condi-
tions. When V
CC
< V
SWITCH
, all software or HSB ini-
tiated STORE operations will be inhibited.
Disabling Power STORES
Internally, RECALL is a two step procedure. First, the
SRAM data is cleared and second, the non-volatile
information is transferred into the SRAM cells. The
RECALL operation in no way alters the data in the
SONOS cells. The non-volatile data can be recalled an
unlimited number of times.
HSB non-volatile STORE
Document Control Nr. 038
September, 2018
Rev 1.0
4
If the POWERSTORE function is not required, this
feature can be disabled by a soft-sequence.
In this case it is important that no other READ or
WRITE accesses intervene in the sequence or the
sequence will be aborted.
To initiate POWERSTORE disable the following READ
sequence must be performed:
Anvo-Systems Dresden
ANV22AA8A
Valid READ
Valid READ
Valid READ
Valid READ
Valid READ
PowerStore
disabled
Once the sixth address in the sequence has been ente-
red, the internal register is set volatile to POWER-
STORE = disable. With a Software controlled non-
volatile STORE this register takes the status non-vola-
tile. It is not necessary that G is LOW for the sequence
to be valid.
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
content of the Read Last Successful Written Address
register will be cleared and set to the non-volatile con-
tent of the register.
To initiate read out Read Last Successful Written Add-
ress register the following READ sequence must be
performed:
1.
Read address
0x4E38
Valid READ
2.
Read address
0xB1C7
Valid READ
3.
Read address
0x83E0
Valid READ
4.
Read address
0x7C1F
Valid READ
5.
Read address
0x703F
Valid READ
READ Byte high
6.
Read address
0x0D30
7.
Read address
0x4E38
Valid READ
8.
Read address
0xB1C7
Valid READ
9.
Read address
0x83E0
Valid READ
10. Read address
0x7C1F
Valid READ
11.
Read address
0x703F
Valid READ
Read Byte 2
12. Read address
0x4D30
13. Read address
0x4E38
Valid READ
14. Read address
0xB1C7
Valid READ
15. Read address
0x83E0
Valid READ
16. Read address
0x7C1F
Valid READ
17. Read address
0x703F
Valid READ
Read Byte low
18. Read address
0x2D30
Byte high is the upper address, followed by byte 2 and
byte low for lowest part of the address.
Low Average Active Power
Enabling Power Stores
If the POWERSTORE function is requested again an
activation via a Soft Sequence can occur,
To initiate POWERSTORE enable again the following
READ sequence must be performed:
1.
Read address
0x4E38
Valid READ
2.
Read address
0xB1C7
Valid READ
3.
Read address
0x83E0
Valid READ
4.
Read address
0x7C1F
Valid READ
5.
Read address
0x703F
Valid READ
6.
Read address
0x4B46
PowerStore
enabled
Once the sixth address in the sequence has been ente-
red, the internal reister is set volatile to POWER-
STORE = enable. With a Software controlled non-
volatile STORE this register takes the status non-vola-
tile. It is not necessary that G is LOW for the sequence
to be valid.
Read Last Successful Written Address
An internal register monitors continuously all WRITE
addresses. With each successful WRITE it will be set
to the address of this operation. It is a 3byte register
which is volatile during normal operation. If POWER-
STORE is enabled it will be stored in case of power
down or brown out like any other data in the memory
array. After Power Up the content can be read out via a
soft sequence. With the first WRITE the register will be
overwritten volatile and with the first STORE operation
also non-volatile. With any RECALL also the volatile
The ANV22AA8A has been designed to draw
significantly less power when E is LOW (chip enabled)
but the access cycle time is longer than 25 ns.
When E is HIGH the chip consumes only standby cur-
rent.
The overall average current drawn by the part depends
on the following items:
1. CMOS or TTL input levels
2. the time during which the chip is disabled (E HIGH)
3. the cycle time for accesses (E LOW)
4. the ratio of READ to WRITE operation
5. the operating temperature
6. the power supply voltage level
Document Control Nr. 038
September, 2018
Rev 1.0
5
Anvo-Systems Dresden
51单片机
