AO4606
30V Complementary MOSFET
General Description
The AO4606 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
Product Summary
N-Channel
V
DS
= 30V
I
D
= 6A (V
GS
=10V)
R
DS(ON)
< 30m
< 42m
(V
GS
=10V)
(V
GS
=4.5V)
P-Channel
-30V
-6.5A (V
GS
=-10V)
R
DS(ON)
< 28m
< 44m
(VGS=-10V)
(VGS=-4.5V)
100% UIS Tested
100% R
g
Tested
100% UIS Tested
100% R
g
Tested
SOIC-8
D2
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
Pin1
n-channel
p-channel
Units
V
V
A
A
mJ
W
°
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
V
DS
Drain-Source Voltage
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Max p-channel
-30
±20
-6.5
-5.3
-30
23
26
2
1.3
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
±20
6
5
30
10
5
2
1.3
-55 to 150
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Rev 10: April 2012
www.aosmd.com
Page 1 of 9
AO4606
N-Channel Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=6A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=6A
I
S
=1A,V
GS
=0V
C
T
J
=125°
1.2
30
25
40
33.5
15
0.76
1
2.5
200
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
30
20
1.6
4
V
GS
=10V, V
DS
=15V, I
D
=6A
2
255
45
35
3.25
5.2
2.55
0.85
1.3
4.5
V
GS
=10V, V
DS
=15V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=6A, dI/dt=100A/µs
2.5
14.5
3.5
8.5
2.2
12
3
310
60
50
4.9
6
3
30
48
42
1.8
Min
30
1
5
±100
2.4
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=6A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 10: April 2012
www.aosmd.com
Page 2 of 9
AO4606
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
4V
I
D
(A)
15
3.5V
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
45
Normalized On-Resistance
40
V
GS
=4.5V
R
DS(ON)
(mΩ)
Ω
35
30
25
V
GS
=10V
20
0
9
12
15
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
3
6
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
2
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=6A
V
GS
=3V
3
I
D
(A)
9
7V
4.5V
12
15
V
DS
=5V
6
125°C
25°C
0
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
V
GS
=10V
I
D
=8A
17
5
2
10
100
I
D
=6A
1.0E+02
1.0E+01
80
R
DS(ON)
(mΩ)
Ω
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
25°C
25°C
1.0E-03
1.0E-04
125°C
40
60
125°C
40
20
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0
2
1.0E-05
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
Rev 10: April 2012
www.aosmd.com
Page 3 of 9
AO4606
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=6A
8
Capacitance (pF)
400
500
V
GS
(Volts)
6
300
C
iss
4
200
C
oss
100
C
rss
2
0
0
4
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
6
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100.0
1000
T
A
=25°C
10.0
10µs
100µs
1ms
10ms
Power (W)
R
DS(ON)
limited
100
I
D
(Amps)
1.0
10
0.1
T
J(Max)
=150°C
T
A
=25°C
DC
10s
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
P
D
T
on
T
100
1000
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.001
Rev 10: April 2012
www.aosmd.com
Page 4 of 9
AO4606
Gate Charge Test Circuit & Waveform
Vgs
Qg
+
VDC
10V
VDC
-
DUT
Vgs
Ig
+
Vds
-
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
Rg
DUT
VDC
+
Vdd
-
Vgs
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
Rg
DUT
Vgs
Vgs
Vgs
Vds
E
AR
= 1/2 LI
AR
2
BV
DSS
VDC
+
Vdd
-
Id
I
AR
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Vgs
t
rr
Q
rr
= - Idt
Vds -
Isd
Vgs
Ig
L
Isd
I
F
dI/dt
I
RM
Vdd
VDC
+
Vdd
-
Vds
Rev 10: April 2012
www.aosmd.com
Page 5 of 9
