AOK10B60D
600V, 10A Alpha IGBT
TM
with Diode
General Description
The Alpha IGBT
TM
line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft co-
package diode is targeted for minimal losses in motor
control applications.
Product Summary
V
CE
I
C
(T
C
=100°
C)
V
CE(sat)
(T
C
=25°
C)
600V
10A
1.53V
100% E
on
/E
off
Tested
100% Q
rr
Tested
100% Short Circuit Current Tested*
Top View
TO-247
C
G
E
E
AOK10B60D
C
G
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Collector-Emitter Voltage
V
CE
Gate-Emitter Voltage
C
Continuous Collector T
C
=25°
T
C
=100°
C
Current
Pulsed Collector Current, Limited by T
Jmax
Turn off SOA, V
CE
≤
600V, Limited by T
Jmax
Continuous Diode
Forward Current
C
T
C
=25°
T
C
=100°
C
V
GE
I
C
I
CM
I
LM
I
F
I
FM
t
SC
AOK10B60D
600
±20
20
10
40
40
20
10
40
10
163
82
-55 to 175
300
AOK10B60D
40
0.92
1.7
Units
V
V
A
A
A
A
A
µs
Diode Pulsed Current, Limited by T
Jmax
Short circuit withstanding time V
GE
= 15V, V
CE
≤
400V, Delay between short circuits
≥
1.0s,
T
C
=150°
C
T
C
=25°
C
Power Dissipation
T
C
=100°
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
* V
CE
equal to 50V
P
D
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θ
JC
R
θ
JC
W
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Rev1: Nov 2012
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Page 1 of 9
AOK10B60D
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
C
=1mA, V
GE
=0V, T
J
=25°
C
T
J
=25°
C
V
CE(sat)
Collector-Emitter Saturation Voltage
V
GE
=15V, I
C
=10A
C
T
J
=125°
T
J
=175°
C
T
J
=25°
C
V
F
V
GE(th)
I
CES
I
GES
g
FS
Diode Forward Voltage
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter leakage current
Forward Transconductance
V
GE
=0V, I
C
=10A
V
CE
=V
GE
, I
C
=1mA
T
J
=25°
C
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=10A
C
T
J
=125°
T
J
=175°
C
T
J
=125°
C
T
J
=175°
C
Min
600
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GE
=0V, V
CE
=25V, f=1MHz
-
-
-
V
GE
=15V, V
CE
=480V, I
C
=10A
-
-
-
-
-
T
J
=25°
C
V
GE
=15V, V
CE
=400V, I
C
=10A,
R
G
=30Ω,
Parasitic
Ιnductance=150nH
-
-
-
-
-
-
T
J
=25°
C
I
F
=10A,dI/dt=200A/µs,V
CE
=400V
-
-
-
-
T
J
=175°
C
V
GE
=15V, V
CE
=400V, I
C
=10A,
R
G
=30Ω,
Parasitic Inductance=150nH
-
-
-
-
-
-
C
T
J
=175°
I
F
=10A,dI/dt=200A/µs,V
CE
=400V
-
-
-
Typ
-
1.53
1.75
1.88
1.52
1.48
1.39
5.8
-
-
-
-
4.8
824
68
2.7
17.4
6.2
6.3
43
3.2
13
19
68
10
0.32
0.07
0.4
105
0.25
5
10.8
18
91
8
0.42
0.12
0.54
196
0.63
6.8
Max
-
1.8
-
-
1.85
-
-
-
10
200
2000
±100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nA
S
pF
pF
pF
nC
nC
nC
A
Ω
ns
ns
ns
ns
mJ
mJ
mJ
ns
µC
A
ns
ns
ns
ns
mJ
mJ
mJ
ns
µC
A
µA
V
V
V
Units
V
STATIC PARAMETERS
BV
CES
Collector-Emitter Breakdown Voltage
DYNAMIC PARAMETERS
C
ies
Input Capacitance
C
oes
C
res
Q
g
Q
ge
Q
gc
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
V
GE
=15V, V
CE
=400V, R
G
=30Ω
I
C(SC)
short circuits
≥
1.0s
V
GE
=0V, V
CE
=0V, f=1MHz
R
g
Gate resistance
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°
C)
t
D(on)
t
r
t
D(off)
t
f
E
on
E
off
E
total
t
rr
Q
rr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I
rm
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, T
J
=175°
C)
t
D(on)
t
r
t
D(off)
t
f
E
on
E
off
E
total
t
rr
Q
rr
I
rm
Turn-On DelayTime
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Nov 2012
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Page 2 of 9
AOK10B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
20V
60
50
I
C
(A)
40
13V
30
20
10
0
0
1
2
3
4
5
6
7
V
CE
(V)
Fig 1: Output Characteristic
(T
j
=25° )
C
V
GE
= 7V
11V
9V
20
10
0
0
1
2
3
4
5
6
7
V
CE
(V)
Fig 2: Output Characteristic
(T
j
=175° )
C
11V
9V
V
GE
=7V
17V
15V
I
C
(A)
50
40
30
60
20V
17V
15V
13V
50
V
CE
=20V
40
25°C
I
C
(A)
30
I
F
(A)
175°C
-40°C
50
-40°C
40
175°C
30
20
20
25°C
10
10
0
4
7
10
13
16
V
GE
(V)
Fig 3: Transfer Characteristic
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
F
(V)
Fig 4: Diode Characteristic
4
45
40
45
40
35
30
25
20
15
10
5
0
5
8
11
14
17
20
V
GE
(V)
Fig 6: V
GE
vs. Short Circuit Time
(V
CE
=400V,T
C
=25°
C
)
Current(A)
3
V
CE(sat)
(V)
I
C
=20A
Time (µS)
µ
150
175
35
30
25
20
15
2
I
C
=10A
1
I
C
=5A
10
5
0
0
25
50
75
100
125
0
Temperature (°
C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev1: Nov 2012
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Page 3 of 9
AOK10B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
CE
=480V
I
C
=10A
1000
I
C
(A)
Capacitance (pF)
9
C
oes
100
10000
C
ies
12
6
3
10
C
res
0
0
4
8
12
16
20
Q
g
(nC)
Fig 7: Gate-Charge Characteristics
1
0
5
10
15
20
25
30
35
40
V
CE
(V)
Fig 8: Capacitance Characteristic
100
I
c
(A)
10
1
10
100
V
CE
(V)
Fig 10: Reverse Bias SOA
(T
j
=175°
C,V
GE
=15V)
1,000
180
150
120
Power Disspation (W)
Current rating I
C
(A)
25
50
75
100
125
150
175
20
16
12
90
60
30
0
8
4
0
25
50
75
100
125
150
175
T
CASE
(°
C)
Fig 12: Current De-rating
T
CASE
(°
C)
Fig 11: Power Disspation as a Function of Case
Rev1: Nov 2012
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Page 4 of 9
AOK10B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
Td(off)
Tf
Td(on)
Tr
10,000
Td(off)
Tf
Switching Time (nS)
1,000
Td(on)
Tr
Switching Time (nS)
100
100
10
10
1
0
10
15
20
I
C
(A)
Figure 13: Switching Time vs. I
C
(T
j
=175°C,V
GE
=15V,V
CE
=400V,R
g
=30Ω)
Ω
5
25
1
0
50
150
200
250
300
R
g
(Ω)
Ω
Figure 14: Switching Time vs. R
g
(T
j
=175°C,V
GE
=15V,V
CE
=400V,I
C
=10A)
100
350
1000
Td(off)
Tf
Td(on)
Tr
Switching Time (nS)
V
GE(TH)
(V)
100
10
8
6
4
10
2
1
0
100
150
T
J
(°C)
Figure 15: Switching Time vs.T
j
( V
GE
=15V,V
CE
=400V,I
C
=10A,R
g
=30Ω)
Ω
50
200
0
0
30
90
120
T
J
(°C)
Figure 16: V
GE(TH)
vs. T
j
60
150
180
Rev1: Nov 2012
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Page 5 of 9
