AON4407
12V P-Channel MOSFET
General Description
The AON4407 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch.
Features
V
DS
(V) = -12V
I
D
= -9 A
R
DS(ON)
< 20m
R
DS(ON)
< 25m
R
DS(ON)
< 31m
ESD Protected
(V
GS
= -4.5V)
(V
GS
= -4.5V)
(V
GS
= -2.5V)
(V
GS
= -1.8V)
DFN 3x2
Top View
Pin 1
Bottom View
D
D
D
G
D
D
D
S
G
D
Rg
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation
B
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
-12
±8
-9
-7
-60
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
A
AD
t ≤ 10s
Steady State
Steady State
R
θJA
R
θJL
Typ
42
74
25
Max
50
90
30
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-12V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-9A
T
J
=125°C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-2.5V, I
D
=-8.5A
V
GS
=-1.8V, I
D
=-7.5A
V
GS
=-1.5V, I
D
=-7A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-9A
I
S
=-1A,V
GS
=0V
-0.35
-60
16.5
22
20
24
29
45
-0.53
-1
-2.5
1740
V
GS
=0V, V
DS
=-6V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
334
200
1.3
19
V
GS
=-4.5V, V
DS
=-6V, I
D
=-9A
4.5
5.3
240
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.67Ω,
R
GEN
=3Ω
I
F
=-9A, dI/dt=100A/µs
580
7
4.2
22
17
27
1.7
23
2100
20
26
25
31
38
-0.5
Min
-12
-1
-5
±10
-0.85
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
kΩ
nC
nC
nC
ns
ns
µs
µs
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-9A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
Rev 1: June 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
-I
D
(A)
-I
D
(A)
-2V
30
20
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics(Note E)
45
Normalized On-Resistance
40
35
R
DS(ON)
(m
Ω
)
30
25
20
15
V
GS
=-4.5V
10
0
2
4
6
8
10
V
GS
=-2.5V
V
GS
=-1.8V
V
GS
=-1.5V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
V
GS
=-1.5V
I
D
=-7A
V
GS
=-1.8V
I
D
=-7.5A
V
GS
=-4.5V
I
D
=-9A
V
GS
=-1.5V
-4.5V
-3V
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics(Note E)
125°C
25°C
-2.5V
60
50
V
DS
=-5V
I
12 14 16 18 20
F
=-6.5A, dI/dt=100A/µs
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
50
45
40
R
DS(ON)
(m
Ω
)
-I
S
(A)
35
30
I
D
=-9A
1E+01
1E+00
1E-01
125°C
1E-02
125°C
25°C
25
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
20
1E-04
OUT OF 15
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
1E-05
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
4
3.5
-V
GS
(Volts)
3
2.5
2
1.5
1
0.5
0
0
4
8
12
16
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
400
0
0
C
rss
2
4
6
8
10
12
V
DS
=-6V
I
D
=-9A
Capacitance (pF)
2800
2400
2000
1600
1200
800
C
oss
C
iss
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
10µs
10
-I
D
(Amps)
R
DS(ON)
limited
1ms
1000
T
J(Max)
=150°C
T
A
=25°C
10ms
1
100ms
DC
0.1
T
J(Max)
=150°C
T
A
=25°C
0.1
1
-V
DS
(Volts)
10s
Power (W)
100
10
0.01
0.01
I
F
=-6.5A, dI/dt=100A/µs
10
100
1
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
VDC
VDC
DUT
Vgs
Ig
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vgs
Vgs
Rg
DUT
VDC
Vgs
Vds
Diode Recovery Test Circuit & W aveforms
Vds +
DUT
Vgs
t
rr
Vds -
Isd
Vgs
L
VDC
Ig
Alpha & Omega Semiconductor, Ltd.
+
+
Vdd
-
-Vds
-
+
Charge
t
on
t
d(on)
t
r
t
d(off)
t
off
t
f
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
Q
rr
= - Idt
-Isd
-I
F
dI/dt
-I
RM
Vdd
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