AON6416
30V N-Channel MOSFET
SDMOS
TM
General Description
The AON6416 is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
22A
< 8mΩ
< 14mΩ
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
D
Top View
8
7
6
5
G
S
PIN1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
22
17
110
14
11
30
45
31
12.5
2.4
1.5
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17
44
3.4
Max
21
53
4
Units
°
C/W
°
C/W
°
C/W
Rev 1: November 2010
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Page 1 of 7
AON6416
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
1.2
110
6.8
9.2
11
40
0.7
1
35
950
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
150
80
0.55
18
V
GS
=10V, V
DS
=15V, I
D
=20A
9
2.4
3.6
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
2
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
50
100
1.8
2.4
8
11
14
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Maximum Body-Diode Continuous Current
1190
220
130
1.1
23
11
3
6
7
10
22
5
7.8
14
9.8
17.6
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1430
290
180
1.7
28
13
3.6
8.4
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
11.7
21
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150° The value in any given application depends
C.
on the user's specific board design, and the maximum temperature of 150° may be used if the PCB allow s it.
C
C,
B. The power dissipation P
D
is based on T
J(MAX)
=150° using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep
C.
C.
initial T
J
=25°
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
G. The maximum current rating is limited by bond-wires.
C.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
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Page 2 of 7
AON6416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
110
100
90
80
70
I
D
(A)
60
50
40
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
18
Normalized On-Resistance
16
14
R
DS(ON)
(m
Ω
)
12
10
8
6
4
2
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
5
10
V
GS
=10V
V
GS
=4.5V
1.6
V
GS
=10V
I
D
=20A
V
GS
=3.5V
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
20
4V
125°
C
25°
C
4.5V
I
D
(A)
10V
6V
7V
5V
60
80
100
V
DS
=5V
40
1.4
1.2
1
17
5
V
GS
=4.5V
2
I
D
=20A
10
0.8
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
30
I
D
=20A
25
20
15
125°
C
10
5
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
40
R
DS(ON)
(m
Ω
)
1.0E-01
1.0E-02
1.0E-03
125°
C
25°
C
25°
C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 1: November 2010
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Page 3 of 7
AON6416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
0
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
25
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
10µs
200
160
Power (W)
120
80
40
0
0.0001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
10µs
100µs
R
DS(ON)
limited
DC
T
J(Max)
=150°
C
T
C
=25°
C
1ms
10ms
17
5
2
10
T
J(Max)
=150°C
T
C
=25°C
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
1
R
θJC
=3.4°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
0.01
T
on
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
Rev 1: November 2010
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Page 4 of 7
AON6416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
I
AR
(A) Peak Avalanche Current
60
50
40
T
A
=100°
C
30
20
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
T
A
=150°
C
T
A
=25°
C
Power Dissipation (W)
30
40
20
10
T
A
=125°
C
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 13: Power De-rating (Note F)
25
10000
T
A
=25°
C
20
Current rating I
D
(A)
Power (W)
1000
15
100
10
10
5
17
5
2
10
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 14: Current De-rating (Note F)
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0
18
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=53°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
100
1000
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: November 2010
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Page 5 of 7
