AON6450
100V N-Channel MOSFET
SDMOS
TM
General Description
The AON6450 is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
52A
< 14.5mΩ
< 17.5mΩ
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
D
Top View
8
7
6
5
G
S
PIN1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
52
33
110
9
7
41
84
83
33
2.3
1.4
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
Rev 1: May 2011
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Page 1 of 7
AON6450
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=100V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±25V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=7V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
2.8
110
12.1
22.8
14
52
0.7
1
85
2000
V
GS
=0V, V
DS
=50V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
170
50
0.4
34
V
GS
=10V, V
DS
=50V, I
D
=20A
11
8
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
2
Min
100
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
50
100
3.3
3.8
14.5
27.5
17.5
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Maximum Body-Diode Continuous Current
G
2570
250
80
0.8
43
14
13.5
15
5
28.5
5
17
75
24
108
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3100
330
120
1.2
52
17
19
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
31
140
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150° The value in any given application depends
C.
on the user's specific board design, and the maximum temperature of 150° may be used if the PCB allow s it.
C
B. The power dissipation P
D
is based on T
J(MAX)
=150° using junction-to-case thermal resistance, and is more useful in setting the upper
C,
dissipation limit for cases where additional heatsinking is used.
C.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°
C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°
C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: May 2011
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Page 2 of 7
AON6450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
110
100
90
80
70
I
D
(A)
I
D
(A)
60
50
40
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
16
Normalized On-Resistance
15
V
GS
=7V
R
DS(ON)
(m
Ω
)
14
13
V
GS
=10V
12
11
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
5
10
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=10V
I
D
=20A
V
GS
=5.5V
6V
10V
7.5V
110
7V
100
90
6.5V
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°
C
25°
C
V
DS
=5V
17
5
2
10
V
GS
=7V
I
D
=20A
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
30
I
D
=20A
1.0E+01
25
R
DS(ON)
(m
Ω
)
1.0E+00
I
S
(A)
20
125°
C
1.0E-01
1.0E-02
1.0E-03
10
25°
C
1.0E-04
1.0E-05
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
(Note E)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°
C
125°
C
40
15
5
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: May 2011
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AON6450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
8
Capacitance (pF)
2500
2000
1500
1000
500
0
0
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
50
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
C
oss
C
rss
3500
3000
C
iss
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1000
T
J(Max)
=150°
C
T
C
=25°
C
R
DS(ON)
limited
DC
10µs
10µs
Power (W)
100µs
1ms
400
350
300
250
200
150
100
50
0
0.0001
T
J(Max)
=150°
C
C
T
C
=25°
17
5
2
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°
C/W
1
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
P
D
T
on
T
10
100
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: May 2011
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Page 4 of 7
AON6450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
I
AR
(A) Peak Avalanche Current
50
Power Dissipation (W)
40
30
20
10
0
0.000001
0.00001
0.0001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
T
A
=125°
C
T
A
=150°
C
T
A
=100°
C
T
A
=25°
C
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 13: Power De-rating (Note F)
60
50
Current rating I
D
(A)
10000
T
A
=25°
C
1000
Power (W)
40
30
20
10
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 14: Current De-rating (Note F)
100
10
17
5
2
10
1
0.0001
0.01
1
100
10000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
18
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=55°
C/W
40
0.1
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
100
1000
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 1: May 2011
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