AON6522
25V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
25V
200A
< 0.95mΩ
< 1.3mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
Top View
8
7
6
5
D
G
S
PIN1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
V
DS
Spike
Power Dissipation
Power Dissipation
B
C
C
Maximum
25
±20
200
151
450
71
57
50
125
36
83
33
7.3
4.7
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
V
SPIKE
P
D
P
DSM
T
J
, T
STG
100ns
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
A
mJ
V
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
Rev 0: Jan 2012
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Page 1 of 6
AON6522
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=25V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
1
1.4
0.75
1.1
1
100
0.7
1
100
7036
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
0.5
2778
353
1.1
107
V
GS
=10V, V
DS
=15V, I
D
=20A
49.7
11.7
21.4
12.3
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
1in
2
Min
25
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
1
5
100
2
0.95
1.4
1.3
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1.7
145
68
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
12.8
68.5
28.8
31
106
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan 2012
www.aosmd.com
Page 2 of 6
AON6522
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
4.5V
80
3V
10V
2.5V
60
I
D
(A)
80
100
V
DS
=5V
60
I
D
(A)
40
40
125°C
25°C
20
V
GS
=2V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
2.0
Normalized On-Resistance
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=10V
I
D
=20A
1.5
R
DS(ON)
(mΩ)
Ω
V
GS
=4.5V
1.0
1.4
1.2
0.5
V
GS
=10V
1
V
GS
=4.5V
I
D
=20A
0.0
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
2
I
D
=20A
1.00E+02
1.00E+01
1.5
R
DS(ON)
(mΩ)
Ω
125°C
1
1.00E+00
I
S
(A)
1.00E-01
1.00E-02
125°C
25°C
0.5
1.00E-03
25°C
1.00E-04
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
1.00E-05
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Jan 2012
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Page 3 of 6
AON6522
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
60
80
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
40
120
0
0
C
rss
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
500
R
DS(ON)
limited
10µs
10µs
Power (W)
400
300
200
100
0
100µs
DC
1ms
T
J(Max)
=150°C
T
C
=25°C
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
T
J(Max)
=150°C
T
C
=25°C
0.0001
0.001
0.01
0.1
1
10
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJC
=1.5°C/W
0.1
Single Pulse
P
D
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan 2012
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Page 4 of 6
AON6522
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
250
Power Dissipation (W)
80
Current rating I
D
(A)
0
75
100
125
T
CASE
(°C)
°
Figure 12: Power De-rating (Note F)
10000
25
50
150
200
60
150
40
100
20
50
0
0
0
50
75
100
125
T
CASE
(°C)
°
Figure 13: Current De-rating (Note F)
25
150
T
A
=25°C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=55°C/W
0.1
P
D
Single Pulse
T
on
T
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan 2012
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Page 5 of 6
