AON7409
30V P-Channel MOSFET
General Description
• The AON7409 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
• RoHS and Halogen-Free Compliant.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-4.5V)
Typical ESD protection
100% UIS Tested
100% R
g
Tested
-30V
-32A
< 8.5mΩ
< 17mΩ
HBM Class 2
Top View
DFN 3x3 EP
Bottom View
D
Top View
1
2
3
4
8
7
6
5
G
Pin 1
Pin 1
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
C
Maximum
-30
±25
-32
-25
-128
-16
-12.5
40
80
96
38.5
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
1
Max
40
75
1.3
Units
°C/W
°C/W
°C/W
Rev.2.0: July 2017
www.aosmd.com
Page 1 of 6
AON7409
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-16A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-10A
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-16A
I
S
=-1A,V
GS
=0V
G
Min
-30
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
-1
-5
±10
-1.6
-128
6.8
T
J
=125°C
9.6
12.8
-43
-0.7
-1
-32
2142
8.5
11.5
17
-2.1
-2.7
µA
uA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
474
363
2.3
41
4.6
58
27
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(10V)
Total Gate Charge
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-16A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge I
F
=-16A, dI/dt=500A/µs
V
GS
=-10V, V
DS
=-15V, R
L
=0.9Ω,
R
GEN
=3Ω
V
GS
=-10V, V
DS
=-15V, I
D
=-16A
18.5
15
6
13
12
34
18.5
17.5
44.5
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t
≤
10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: July 2017
www.aosmd.com
Page 2 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
-10V
-7V
-5V
60
-4.5V
60
80
V
DS
=-5V
-I
D
(A)
-I
D
(A)
-4V
40
40
20
V
GS
=-3.5V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
18
Normalized On-Resistance
16
14
R
DS(ON)
(mΩ)
12
10
8
6
4
2
0
0
15
20
25
30
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
V
GS
=-10V
V
GS
=-4.5V
20
125°C
25°C
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=-10V
I
D
=-16A
1.4
1.2
1
17
5
2
V
GS
=-4.5V
I
D
=-10A
10
0.8
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
30
I
D
=-16A
25
-I
S
(A)
20
R
DS(ON)
(mΩ)
15
10
125°C
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25°C
125°C
5
0
2
4
6
25°C
1.0E-04
8
10
1.0E-05
0.0
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
0.4
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: July 2017
www.aosmd.com
Page 3 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-16A
8
Capacitance (pF)
3000
2500
2000
1500
1000
C
oss
500
C
rss
0
0
10
20
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
200
10µs
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
10µs
Power (W)
100µs
1ms
10ms
160
C
iss
-V
GS
(Volts)
-I
D
(Amps)
6
4
2
1000.0
100.0
10.0
1.0
0.1
0.0
0.01
T
J(Max)
=150°C
T
C
=25°C
DC
120
17
5
2
10
0.1
1
-V
DS
(Volts)
10
100
80
0.0001
0.001
0.01
0.1
1
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.3
°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
T
on
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: July 2017
www.aosmd.com
Page 4 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
-I
AR
(A) Peak Avalanche Current
T
A
=25°C
100
T
A
=150°C
Power Dissipation (W)
1000
T
A
=100°C
100
80
60
40
10
T
A
=125°C
20
1
1
10
100
Time in avalanche, t
A
(µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
40
35
-Current rating I
D
(A)
30
Power (W)
25
20
15
10
5
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
10000
T
A
=25°C
1000
100
17
5
2
10
10
1
1E-05
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
Single Pulse
T
on
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
0.01
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: July 2017
www.aosmd.com
Page 5 of 6
RF/无线
