AOT15B65M1/AOB15B65M1
650V, 15A Alpha IGBT
TM
With soft and fast recovery anti-parallel diode
General Description
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
Product Summary
V
CE
I
C
(T
C
=100°C)
V
CE(sat)
(T
J
=25°C)
650V
15A
1.7V
Applications
• Motor Drives
• Sewing Machines
• Home Appliances
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
TO-220
TO-263
D
2
PAK
C
C
G
AOT15B65M1
C
E
G
AOB15B65M1
E
G
E
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT15B65M1
TO220
Tube
1000
AOB15B65M1
TO263
Tape & Reel
800
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
AOT15B65M1/AOB15B65M1
V
CE
Collector-Emitter Voltage
650
Gate-Emitter Voltage
Continuous Collector T
C
=25°C
T
C
=100°C
Current
Pulsed Collector Current, Limited by T
Jmax
Turn off SOA, V
CE
≤650V,
Limited by T
Jmax
Continuous Diode
Forward Current
T
C
=25°C
T
C
=100°C
V
GE
I
C
I
CM
I
LM
I
F
I
FM
t
SC
P
D
T
J
, T
STG
±30
30
15
45
45
30
15
45
5
214
107
-55 to 175
Units
V
V
A
A
A
A
A
µs
W
°C
°C
Units
°C/W
°C/W
°C/W
Diode Pulsed Current, Limited by T
Jmax
Short circuit withstanding time
1)
V
GE
=15V, V
CC
≤400V,
T
J
≤175°C
T
C
=25°C
Power Dissipation
T
C
=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T
L
300
Thermal Characteristics
Symbol
AOT15B65M1/AOB15B65M1
Parameter
R
θ
JA
Maximum Junction-to-Ambient
65
Maximum IGBT Junction-to-Case
R
θ
JC
0.7
Maximum Diode Junction-to-Case
R
θ
JC
1.9
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Rev.2.0: April 2015
www.aosmd.com
Page 1 of 9
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
C
=1mA, V
GE
=0V, T
J
=25°C
T
J
=25°C
V
CE(sat)
Collector-Emitter Saturation Voltage
V
GE
=15V, I
C
=15A
T
J
=125°C
T
J
=175°C
T
J
=25°C
V
F
V
GE(th)
I
CES
I
GES
g
FS
Diode Forward Voltage
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter leakage current
Forward Transconductance
V
GE
=0V, I
C
=15A
V
CE
=5V, I
C
=1mA
T
J
=25°C
V
CE
=650V, V
GE
=0V
V
CE
=0V, V
GE
=±30V
V
CE
=20V, I
C
=15A
T
J
=125°C
T
J
=175°C
T
J
=125°C
T
J
=175°C
Min
650
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GE
=0V, V
CC
=25V, f=1MHz
-
-
-
V
GE
=15V, V
CC
=520V, I
C
=15A
V
GE
=15V, V
CC
=400V,
t
sc
≤5us,
T
J
≤175°C
-
-
-
-
-
-
T
J
=25°C
V
GE
=15V, V
CC
=400V, I
C
=15A,
R
G
=20Ω
-
-
-
-
-
T
J
=25°C
I
F
=15A, di/dt=200A/µs, V
CC
=400V
-
-
-
-
-
T
J
=175°C
V
GE
=15V, V
CC
=400V, I
C
=15A,
R
G
=20Ω
-
-
-
-
-
T
J
=175°C
I
F
=15A, di/dt=200A/µs, V
CC
=400V
-
-
-
Typ
-
1.7
2.03
2.22
1.77
1.82
1.75
5.1
-
-
-
-
11
923
96
33
32
7.8
15
90
6.7
15
18
94
14
0.29
0.2
0.49
317
0.7
4.7
13
20
116
28
0.33
0.36
0.69
509
1.3
6
Max
-
2.15
-
-
2.25
-
-
-
10
500
5000
±100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nA
S
pF
pF
pF
nC
nC
nC
A
Ω
ns
ns
ns
ns
mJ
mJ
mJ
ns
µC
A
ns
ns
ns
ns
mJ
mJ
mJ
ns
µC
A
µA
V
V
V
Units
V
STATIC PARAMETERS
BV
CES
Collector-Emitter Breakdown Voltage
DYNAMIC PARAMETERS
C
ies
Input Capacitance
C
oes
C
res
Q
g
Q
ge
Q
gc
I
C(SC)
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Short circuit collector current
V
GE
=0V, V
CC
=0V, f=1MHz
R
g
Gate resistance
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°C)
t
D(on)
t
r
t
D(off)
t
f
E
on
E
off
E
total
t
rr
Q
rr
I
rm
Turn-On DelayTime
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, T
J
=175°C)
t
D(on)
t
r
t
D(off)
t
f
E
on
E
off
E
total
t
rr
Q
rr
I
rm
Turn-On DelayTime
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: April 2015
www.aosmd.com
Page 2 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
75
20V
60
17V
15V
13V
I
C
(A)
11V
I
C
(A)
45
36
13V
17V
48
15V
60
20V
30
9V
24
11V
9V
15
V
GE
= 7V
0
0
1
2
3
4
5
6
7
V
CE
(V)
Figure 1: Output Characteristic
(T
j
=25°C)
12
V
GE
=7V
0
0
1
2
3
4
5
6
7
V
CE
(V)
Figure 2: Output Characteristic
(T
j
=175°C)
45
V
CE
=20V
36
45
36
-40°C
I
C
(A)
27
18
25°C
9
-40°C
I
F
(A)
175°C
27
25°C
18
175°C
9
0
3
6
9
12
15
V
GE
(V)
Figure 3: Transfer Characteristic
0
0
0.5
1
1.5
2
2.5
3
V
F
(V)
Figure 4: Diode Characteristic
5
3
30A
2.5
I
C
=30A
2
15A
4
V
CE(sat)
(V)
V
SD
(V)
3
I
C
=15A
2
1.5
1
5A
1
I
C
=7.5A
IF=1A
0.5
0
0
0
75
100
125
150
175
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
25
50
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 6: Diode Forward voltage vs. Junction
Temperature
Rev.2.0: April 2015
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Page 3 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
CE
=520V
I
C
=15A
12
1000
V
GE
(V)
9
Capacitance (pF)
C
ies
10000
C
oes
100
6
3
10
C
res
0
0
16
24
32
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
8
40
1
0
8
16
24
32
40
V
CE
(V)
Figure 8: Capacitance Characteristic
300
240
Power Disspation (W)
180
120
60
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 10: Power Disspation as a Function of Case
40
1E-02
1E-03
1E-04
I
CE(S)
(A)
32
Current rating I
C
(A)
24
V
CE
=650V
1E-05
1E-06
V
CE
=520V
16
8
1E-07
1E-08
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 11: Current De-rating
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
0
Rev.2.0: April 2015
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
Td(off)
Tf
Td(on)
Tr
Switching Time (ns)
10000
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (ns)
1000
100
100
10
10
1
5
10
15
20
25
30
I
C
(A)
Figure 13: Switching Time vs. I
C
(T
j
=175°C, V
GE
=15V, V
CE
=400V, R
g
=20Ω)
10000
1
0
120
160
R
g
(Ω)
Figure 14: Switching Time vs. R
g
(T
j
=175°C, V
GE
=15V, V
CE
=400V, I
C
=15A)
40
80
200
1000
Switching Time (ns)
Td(off)
Tf
Td(on)
Tr
7
6
5
100
V
GE(TH)
(V)
25
100
125
150
T
J
(°C)
Figure 15: Switching Time vs.T
j
(V
GE
=15V, V
CE
=400V, I
C
=15A, R
g
=20Ω)
50
75
175
4
3
10
2
1
1
0
25
50
75
100
125
150
175
T
J
(°C)
Figure 16: V
GE(TH)
vs. T
j
Rev.2.0: April 2015
www.aosmd.com
Page 5 of 9
