AOW15S65/AOWF15S65
650V 15A
α
MOS
TM
Power Transistor
General Description
The AOW15S65 & AOWF15S65 have been fabricated
using the advanced
αMOS
TM
high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
750V
60A
0.29Ω
17.2nC
3.6µJ
100% UIS Tested
100% R
g
Tested
TO-262
Top View
Bottom View
Top View
TO-262F
D
Bottom View
G
G
D
S
S
D
G
G
D
S
S
D
G
S
AOW15S65
AOWF15S65
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOW15S65
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOWF15S65
650
±30
15*
10*
60
2.4
86
173
Units
V
V
A
A
mJ
mJ
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
AOW15S65
65
0.5
0.6
208
1.7
15
10
Repetitive avalanche energy
Single pulsed avalanche energy
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
28
0.22
100
20
-55 to 150
300
AOWF15S65
65
--
4.5
W
W/
o
C
V/ns
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev0: Dec 2011
www.aosmd.com
Page 1 of 6
AOW15S65/AOWF15S65
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
C
Parameter
Conditions
C
I
D
=250µA, V
GS
=0V, T
J
=25°
I
D
=250µA, V
GS
=0V, T
J
=150°
C
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
J
=150°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V,I
D
=250µA
V
GS
=10V, I
D
=7.5A, T
J
=25°
C
V
GS
=10V, I
D
=7.5A, T
J
=150°
C
C
I
S
=7.5A,V
GS
=0V, T
J
=25°
Min
650
700
-
-
-
2.6
-
-
-
-
-
-
-
-
Typ
-
750
-
10
-
3.3
0.254
0.68
0.82
-
-
841
58
40
150
1.1
14
17.2
4.3
5.6
27
24
90
23
320
27
5.5
Max
-
-
1
-
±100
4
0.29
0.78
-
15
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
V
µA
nΑ
V
Ω
Ω
V
A
A
pF
pF
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
o(er)
C
o(tr)
C
rss
R
g
Output Capacitance
Effective output capacitance, energy
related
H
Effective output capacitance, time
related
I
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
-
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
-
-
-
V
GS
=10V, V
DS
=480V, I
D
=7.5A
-
-
-
V
GS
=10V, V
DS
=400V, I
D
=7.5A,
R
G
=25Ω
I
F
=7.5A,dI/dt=100A/µs,V
DS
=400V
I
F
=7.5A,dI/dt=100A/µs,V
DS
=400V
-
-
-
-
-
-
SWITCHING PARAMETERS
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
I
rm
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Body Diode Reverse Recovery Charge I
F
=7.5A,dI/dt=100A/µs,V
DS
=400V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
C,
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep initial T
J
C,
=25°
C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
G. L=60mH, I
AS
=2.4A, V
DD
=150V, Starting T
J
=25°
C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2011
www.aosmd.com
Page 2 of 6
AOW15S65/AOWF15S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
10V
20
6V
7V
16
10V
5.5V
I
D
(A)
5.5V
10
5V
5
V
GS
=4.5V
0
0
5
10
15
20
V
DS
(Volts)
Figure 1: On-Region Characteristics@25°C
0
0
5
10
15
20
I
D
(A)
15
12
5V
20
7V
6V
8
4
V
GS
=4.5V
V
DS
(Volts)
Figure 2: On-Region Characteristics@125°C
100
-55°C
V
DS
=20V
10
125°C
R
DS(ON)
(
Ω
)
1.0
0.8
0.6
V
GS
=10V
0.4
0.2
0.0
2
4
6
8
10
0
6
12
18
24
30
36
V
GS
(Volts)
Figure 3: Transfer Characteristics
I
D
(A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
I
D
(A)
1
0.1
25°C
0.01
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
-100
BV
DSS
(Normalized)
V
GS
=10V
I
D
=7.5A
1.1
1
0.9
-50
0
50
100
150
200
0.8
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
T
J
(
o
C)
Figure 6: Break Down vs. Junction Temperature
Rev0: Dec 2011
www.aosmd.com
Page 3 of 6
AOW15S65/AOWF15S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
125°C
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
3
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
10000
C
iss
Eoss(uJ)
0
0
5
10
15
20
25
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
7
6
5
4
E
oss
3
C
rss
1
2
1
0
0
200
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
600
0
100
300
400
500
V
DS
(Volts)
Figure 10: Coss stored Energy
200
600
V
GS
(Volts)
25°C
9
15
12
V
DS
=480V
I
D
=7.5A
6
1000
Capacitance (pF)
100
C
oss
10
0
100
R
DS(ON)
limited
10µs
100
R
DS(ON)
limited
10µs
100µs
1ms
DC
10ms
0.1s
1s
10
I
D
(Amps)
10
I
D
(Amps)
100µs
1
DC
1ms
10ms
1
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
1000
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOW15S65 (Note F)
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
1000
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe Operating
Area for AOWF15S65(Note F)
Rev0: Dec 2011
www.aosmd.com
Page 4 of 6
AOW15S65/AOWF15S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
20
160
Current rating I
D
(A)
25
50
100
125
150
T
CASE
(°C)
Figure 13: Avalanche energy
75
175
E
AS
(mJ)
16
120
12
80
8
40
4
0
0
0
75
100
125
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
25
50
150
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOW15S65 (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOWF15S65 (Note F)
Rev0: Dec 2011
www.aosmd.com
Page 5 of 6
移动便携
