AP4407GR
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-30V
14mΩ
-50A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±25
-50
-32
180
54
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.3
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200218051
AP4407GR
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.01
Max. Units
-
-
14
23
-3
-
-1
-25
±100
60
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-24A
V
GS
=-4.5V, I
D
=-16A
-
-
-
36
-
-
-
35
5
26
11
64
63
100
630
550
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-24A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
= ±25V
I
D
=-24A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-24A
R
G
=3.3Ω,V
GS
=-10V
R
D
=0.63Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2120 3390
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-24A, V
GS
=0V
I
S
=-24A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
39
38
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP4407GR
250
150
T
C
=25
o
C
200
-10V
-8.0V
-I
D
, Drain Current (A)
T
C
=150
o
C
-10V
-8.0V
-6.0V
-I
D
, Drain Current (A)
100
150
-6.0V
100
-4.5V
50
-4.5V
50
V
G
=-3.0V
0
V
G
=-3.0V
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
1.8
I
D
= -16 A
T
C
=25
℃
Normalized R
DS(ON)
20
1.6
I
D
=-24A
V
G
=-10V
1.4
R
DS(ON)
(m
Ω
)
1.2
15
1.0
0.8
10
3
5
7
9
11
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.0
30
2.5
20
-I
S
(A)
T
j
=150 C
o
T
j
=25 C
o
-V
GS(th)
(V)
2.0
1.5
10
1.0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP4407GR
f=1.0MHz
14
10000
-V
GS
, Gate to Source Voltage (V)
12
I
D
= - 24 A
V
DS
= -24V
C
iss
10
8
C (pF)
1000
6
C
oss
C
rss
4
2
0
100
0
20
40
60
80
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
100us
-I
D
(A)
0.1
0.1
0.05
1ms
10
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
100
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
嵌入式系统
