AP4513GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
SO-8
S1
D1
D2
D1
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
G2
S2
G1
35V
36mΩ
5.8A
-35V
68mΩ
-4.3A
P-CH BV
DSS
R
DS(ON)
I
D
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
4
Avalanche Current
Repetitive Avalanche Energy
1
Storage Temperature Range
Operating Junction Temperature Range
12.5
5
0.05
-55 to 150
-55 to 150
3
Rating
N-channel
35
+20
5.8
4.7
20
2
0.016
12.5
-5
0.05
P-channel
-35
+20
-4.3
-3.4
-20
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
1
201006284
Data and specifications subject to change without notice
AP4513GM-HF
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=5A
V
DS
=28V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
35
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
7
-
-
-
6
2
3
8
7
16
3
470
90
60
Max. Units
-
-
36
60
3
-
1
25
+100
10
-
-
-
-
-
-
750
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=5A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
17
11
Max. Units
1.2
-
-
V
ns
nC
2
AP4513GM-HF
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25℃,I
D
=-1mA
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-4A
V
DS
=-30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-4A
V
DS
=-28V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=15Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-35
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.03
-
-
-
6
-
-
-
6
1
4
8
7
20
4
410
95
70
Max. Units
-
-
68
100
-3
-
-1
-25
+100
10
-
-
-
-
-
-
660
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=-1.7A, V
GS
=0V
I
S
=-4A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
21
16
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
4.Starting T
j
=25
o
C , V
DD
=25V , L=1mH , R
G
=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4513GM
N-Channel
30
30
T
A
=25 C
I
D
, Drain Current (A)
o
10V
7.0V
5.0V
I
D
, Drain Current (A)
T
A
= 150
o
C
10V
7.0V
20
20
5.0V
4.5V
10
4.5V
10
V
G
=3.0V
V
G
=3.0V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
65
1.8
I
D
=3A
Normalized R
DS(ON)
55
T
A
=25
o
C
1.4
I
D
=5A
V
G
=10V
R
DS(ON0
(m
Ω
)
45
1.0
35
25
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
4
Normalized V
GS(th)
(V)
1.1
I
S
(A)
3
T
j
=150
o
C
2
T
j
=25
o
C
0.7
1
0
0
0.2
0.4
0.6
0.8
1
1.2
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4513GM-HF
N-Channel
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
I
D
=5A
V
DS
= 28 V
9
C
iss
C (pF)
6
100
C
oss
C
rss
3
0
0
4
8
12
16
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
10
0.2
1ms
I
D
(A)
10ms
1
0.1
0.1
0.05
0.02
0.01
100ms
1s
0.1
P
DM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
10s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
