AP4578GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Performance
▼
RoHS Compliant
SO-8
SO-8
D2
D1 D2
D1 D1
D1
D2
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
G2
G2
S2
S2
G1
S1 G1
S1
60V
64mΩ
4.5A
-60V
125mΩ
-3A
P-CH BV
DSS
R
DS(ON)
I
D
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
3
Rating
N-channel
60
±20
4.5
3.6
20
2.0
0.016
-55 to 150
-55 to 150
P-channel
-60
±20
-3
-2.4
-20
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
62.5
Unit
℃/W
Data and specifications subject to change without notice
200422051-1/7
AP4578GM
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.05
55
65
-
7
-
-
-
9
3
4
9
5
22
7
730
80
60
1.8
Max. Units
-
-
64
80
3
-
1
25
±100
17
-
-
-
-
-
-
1170
-
-
2.7
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=4A
V
GS
=4.5V, I
D
=2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4A
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V
V
GS
=±20V
I
D
=4A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=4A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
39
Max. Units
1.2
-
-
V
ns
nC
2/7
AP4578GM
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25℃,I
D
=-1mA
V
GS
=-10V, I
D
=-3A
V
GS
=-4.5V, I
D
=-2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-2A
V
DS
=-60V, V
GS
=0V
V
DS
=-48V, V
GS
=0V
V
GS
=±20V
I
D
=-3A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=30Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
2
Min.
-60
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.04
100
120
-
5
-
-
-
12
2
6
10
6
33
6
905
90
75
12
Max. Units
-
-
125
150
-3
-
-1
-25
±100
20
-
-
-
-
-
-
1450
-
-
18
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
o
C)
j
=25
Drain-Source Leakage Current (T
o
C)
j
=70
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1.7A, V
GS
=0V
I
S
=-3A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
36
55
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
3/7
AP4578GM
N-Channel
25
25
T
A
= 25
o
C
20
I
D
, Drain Current (A)
15
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
A
=150
o
C
20
10V
7.0V
5.0V
4.5V
15
10
10
5
5
V
G
=3.0V
V
G
=3.0V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
1.6
I
D
=2A
70
T
A
=25
o
C
Normalized R
DS(ON)
1.4
I
D
=4A
V
G
=10V
R
DS(ON)
(m
Ω
)
65
1.2
60
1.0
55
0.8
-6.3
-5
50
0.6
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
4
3
1.5
2
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
I
S
(A)
1
1
0.5
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4578GM
N-Channel
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
C
iss
10
I
D
=4A
V
DS
= 48 V
8
6
C (pF)
100
C
oss
C
rss
4
2
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
0.2
100us
I
D
(A)
1
0.1
0.1
0.05
1ms
10ms
0.02
0.01
P
DM
t
T
Single Pulse
0.01
0.1
T
A
=25
o
C
Single Pulse
100ms
1s
DC
10
100
1000
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135℃/W
0.01
0.1
1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
V
DS
=5V
20
V
G
T
j
=125
o
C
I
D
, Drain Current (A)
T
j
=25
o
C
15
Q
G
4.5V
Q
GS
Q
GD
10
5
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
